JPS6110986B2 - - Google Patents
Info
- Publication number
- JPS6110986B2 JPS6110986B2 JP51155908A JP15590876A JPS6110986B2 JP S6110986 B2 JPS6110986 B2 JP S6110986B2 JP 51155908 A JP51155908 A JP 51155908A JP 15590876 A JP15590876 A JP 15590876A JP S6110986 B2 JPS6110986 B2 JP S6110986B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base layer
- thyristor
- emitter
- emitter layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 claims description 15
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000001788 irregular Effects 0.000 claims description 2
- 108091008695 photoreceptors Proteins 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000001960 triggered effect Effects 0.000 description 3
- 101100244438 Alkaliphilus metalliredigens (strain QYMF) pnp3 gene Proteins 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 241000533950 Leucojum Species 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
Landscapes
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15590876A JPS5379390A (en) | 1976-12-23 | 1976-12-23 | Photo thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15590876A JPS5379390A (en) | 1976-12-23 | 1976-12-23 | Photo thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5379390A JPS5379390A (en) | 1978-07-13 |
JPS6110986B2 true JPS6110986B2 (enrdf_load_stackoverflow) | 1986-04-01 |
Family
ID=15616132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15590876A Granted JPS5379390A (en) | 1976-12-23 | 1976-12-23 | Photo thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5379390A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6159776A (ja) * | 1984-08-30 | 1986-03-27 | Semiconductor Res Found | 光トリガサイリスタ |
-
1976
- 1976-12-23 JP JP15590876A patent/JPS5379390A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5379390A (en) | 1978-07-13 |
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