JPS6226194B2 - - Google Patents
Info
- Publication number
- JPS6226194B2 JPS6226194B2 JP53010212A JP1021278A JPS6226194B2 JP S6226194 B2 JPS6226194 B2 JP S6226194B2 JP 53010212 A JP53010212 A JP 53010212A JP 1021278 A JP1021278 A JP 1021278A JP S6226194 B2 JPS6226194 B2 JP S6226194B2
- Authority
- JP
- Japan
- Prior art keywords
- junction
- semiconductor layer
- light
- thyristor
- pellet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 claims description 38
- 239000008188 pellet Substances 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 description 57
- 239000000969 carrier Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1021278A JPS54102993A (en) | 1978-01-31 | 1978-01-31 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1021278A JPS54102993A (en) | 1978-01-31 | 1978-01-31 | Optical semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54102993A JPS54102993A (en) | 1979-08-13 |
| JPS6226194B2 true JPS6226194B2 (enrdf_load_stackoverflow) | 1987-06-08 |
Family
ID=11743949
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1021278A Granted JPS54102993A (en) | 1978-01-31 | 1978-01-31 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54102993A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5651883A (en) * | 1979-10-05 | 1981-05-09 | Nec Corp | Light receiving diode |
| JPS5823477A (ja) * | 1981-08-05 | 1983-02-12 | Nec Corp | 光感応シリコンプレ−ナ形サイリスタ |
-
1978
- 1978-01-31 JP JP1021278A patent/JPS54102993A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54102993A (en) | 1979-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6046551B2 (ja) | 半導体スイツチング素子およびその製法 | |
| JPH0117268B2 (enrdf_load_stackoverflow) | ||
| JPH0766975B2 (ja) | 複合型ダイオード装置 | |
| JP2000299477A (ja) | 半導体装置およびその製造方法 | |
| JPS622461B2 (enrdf_load_stackoverflow) | ||
| JPS6226194B2 (enrdf_load_stackoverflow) | ||
| JPH0465552B2 (enrdf_load_stackoverflow) | ||
| US4910562A (en) | Field induced base transistor | |
| JP2557818B2 (ja) | 逆導通ゲ−トタ−ンオフサイリスタ装置 | |
| JP2802459B2 (ja) | フォト・トライアック | |
| JPS623987B2 (enrdf_load_stackoverflow) | ||
| JPS6364060B2 (enrdf_load_stackoverflow) | ||
| JPS60187058A (ja) | 半導体装置 | |
| US4081818A (en) | Semiconductor temperature sensitive switching device with short carrier lifetime region | |
| JPH0666043U (ja) | 半導体発光素子 | |
| JPS6058594B2 (ja) | プレ−ナ形ホトサイリスタ | |
| JPS5945233B2 (ja) | 光点弧型半導体装置 | |
| JPH0468791B2 (enrdf_load_stackoverflow) | ||
| JP2937100B2 (ja) | 半導体装置 | |
| JP4302329B2 (ja) | 半導体装置 | |
| JP3206149B2 (ja) | 絶縁ゲートバイポーラトランジスタ | |
| JP2969778B2 (ja) | 高電子移動度複合トランジスタ | |
| JPS6152586B2 (enrdf_load_stackoverflow) | ||
| JP2866174B2 (ja) | ゲートターンオフサイリスタ | |
| JP2817147B2 (ja) | 電界効果トランジスタ |