JPS61105849A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61105849A
JPS61105849A JP59226692A JP22669284A JPS61105849A JP S61105849 A JPS61105849 A JP S61105849A JP 59226692 A JP59226692 A JP 59226692A JP 22669284 A JP22669284 A JP 22669284A JP S61105849 A JPS61105849 A JP S61105849A
Authority
JP
Japan
Prior art keywords
layer
plate
aluminum plate
silicon semiconductor
temperature compensating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59226692A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0478171B2 (OSRAM
Inventor
Hiroaki Sakamoto
坂本　洋明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Rectifier Corp Japan Ltd
Original Assignee
International Rectifier Corp Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp Japan Ltd filed Critical International Rectifier Corp Japan Ltd
Priority to JP59226692A priority Critical patent/JPS61105849A/ja
Publication of JPS61105849A publication Critical patent/JPS61105849A/ja
Publication of JPH0478171B2 publication Critical patent/JPH0478171B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/073—
    • H10W72/01325—
    • H10W72/01361—
    • H10W72/01365—
    • H10W72/07302—
    • H10W72/07336—
    • H10W72/347—
    • H10W72/352—
    • H10W72/381—
    • H10W72/944—
    • H10W90/736—

Landscapes

  • Wire Bonding (AREA)
  • Die Bonding (AREA)
JP59226692A 1984-10-30 1984-10-30 半導体装置の製造方法 Granted JPS61105849A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59226692A JPS61105849A (ja) 1984-10-30 1984-10-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59226692A JPS61105849A (ja) 1984-10-30 1984-10-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61105849A true JPS61105849A (ja) 1986-05-23
JPH0478171B2 JPH0478171B2 (OSRAM) 1992-12-10

Family

ID=16849155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59226692A Granted JPS61105849A (ja) 1984-10-30 1984-10-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61105849A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077224A (en) * 1988-03-15 1991-12-31 Siemens Aktiengesellschaft Thyristor with high positive and negative blocking capability and method for the manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5598835A (en) * 1979-01-19 1980-07-28 Mitsubishi Electric Corp Pressure-welded semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5598835A (en) * 1979-01-19 1980-07-28 Mitsubishi Electric Corp Pressure-welded semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077224A (en) * 1988-03-15 1991-12-31 Siemens Aktiengesellschaft Thyristor with high positive and negative blocking capability and method for the manufacture thereof

Also Published As

Publication number Publication date
JPH0478171B2 (OSRAM) 1992-12-10

Similar Documents

Publication Publication Date Title
US3657611A (en) A semiconductor device having a body of semiconductor material joined to a support plate by a layer of malleable metal
JPS6190188A (ja) 薄膜表示装置
JPS61105849A (ja) 半導体装置の製造方法
US4246693A (en) Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum
JPH08172195A (ja) 薄膜トランジスタ
JP2717166B2 (ja) 半導体装置の製造方法
JPS6387767A (ja) 圧接型電力用半導体装置
JPH0245976A (ja) 炭化ケイ素の電極形成方法
JPS63253633A (ja) 半導体装置の製造方法
JPS62296428A (ja) シヨツトキ−バリアダイオ−ドの製造方法
JPS6016463A (ja) オ−ム性電極
JPH0677467A (ja) ショットキバリア半導体装置
JPS63234562A (ja) 半導体装置の電極
JP2639959B2 (ja) 半導体装置の製造方法
JPS5917971B2 (ja) 半導体装置
JPS61265875A (ja) 光電変換素子の製造方法
JPS5987889A (ja) 半導体素子の製造方法
JPS58157178A (ja) 光電変換装置の製造方法
JPS62194650A (ja) 半導体装置
JPH01303760A (ja) アクティブマトリクス基板およびその製造方法
JPS63161631A (ja) シリコン半導体素子
JPH04335524A (ja) 半導体装置の製造方法
JPS6332253B2 (OSRAM)
JPS6258648A (ja) 半導体装置
JPH0344940A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term