JPS61104074A - スパッタリング方法及びその装置 - Google Patents

スパッタリング方法及びその装置

Info

Publication number
JPS61104074A
JPS61104074A JP59223944A JP22394484A JPS61104074A JP S61104074 A JPS61104074 A JP S61104074A JP 59223944 A JP59223944 A JP 59223944A JP 22394484 A JP22394484 A JP 22394484A JP S61104074 A JPS61104074 A JP S61104074A
Authority
JP
Japan
Prior art keywords
target
magnetic
plasma
lines
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59223944A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0583632B2 (enrdf_load_stackoverflow
Inventor
Yutaka Saito
裕 斉藤
Yasumichi Suzuki
康道 鈴木
Hidezo Sano
秀造 佐野
Tamotsu Shimizu
保 清水
Susumu Aiuchi
進 相内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59223944A priority Critical patent/JPS61104074A/ja
Priority to DE8585110155T priority patent/DE3566194D1/de
Priority to EP85110155A priority patent/EP0173164B1/en
Priority to KR1019850006013A priority patent/KR900006488B1/ko
Priority to US06/769,505 priority patent/US4721553A/en
Publication of JPS61104074A publication Critical patent/JPS61104074A/ja
Publication of JPH0583632B2 publication Critical patent/JPH0583632B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP59223944A 1984-08-31 1984-10-26 スパッタリング方法及びその装置 Granted JPS61104074A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59223944A JPS61104074A (ja) 1984-10-26 1984-10-26 スパッタリング方法及びその装置
DE8585110155T DE3566194D1 (en) 1984-08-31 1985-08-13 Microwave assisting sputtering
EP85110155A EP0173164B1 (en) 1984-08-31 1985-08-13 Microwave assisting sputtering
KR1019850006013A KR900006488B1 (ko) 1984-08-31 1985-08-21 마이크로파 여기 스퍼터링 방법 및 장치
US06/769,505 US4721553A (en) 1984-08-31 1985-08-23 Method and apparatus for microwave assisting sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59223944A JPS61104074A (ja) 1984-10-26 1984-10-26 スパッタリング方法及びその装置

Publications (2)

Publication Number Publication Date
JPS61104074A true JPS61104074A (ja) 1986-05-22
JPH0583632B2 JPH0583632B2 (enrdf_load_stackoverflow) 1993-11-26

Family

ID=16806146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59223944A Granted JPS61104074A (ja) 1984-08-31 1984-10-26 スパッタリング方法及びその装置

Country Status (1)

Country Link
JP (1) JPS61104074A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62151561A (ja) * 1985-12-25 1987-07-06 Hitachi Ltd スパツタリング装置
JPS62222064A (ja) * 1986-03-24 1987-09-30 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成装置
JPH01283371A (ja) * 1988-05-10 1989-11-14 Matsushita Electric Ind Co Ltd スパッタ装置
JPH11288799A (ja) * 1998-01-26 1999-10-19 Commiss Energ Atom 永久磁石を用いた線形マイクロ波プラズマ発生装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6344437B2 (ja) * 2016-07-27 2018-06-20 トヨタ自動車株式会社 高周波供給構造

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5875839A (ja) * 1981-10-30 1983-05-07 Fujitsu Ltd スパツタ装置
JPS58161774A (ja) * 1982-03-17 1983-09-26 Fujitsu Ltd スパツタリング処理方法
JPS6050167A (ja) * 1983-08-26 1985-03-19 Nippon Telegr & Teleph Corp <Ntt> プラズマ付着装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5875839A (ja) * 1981-10-30 1983-05-07 Fujitsu Ltd スパツタ装置
JPS58161774A (ja) * 1982-03-17 1983-09-26 Fujitsu Ltd スパツタリング処理方法
JPS6050167A (ja) * 1983-08-26 1985-03-19 Nippon Telegr & Teleph Corp <Ntt> プラズマ付着装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62151561A (ja) * 1985-12-25 1987-07-06 Hitachi Ltd スパツタリング装置
JPS62222064A (ja) * 1986-03-24 1987-09-30 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成装置
JPH01283371A (ja) * 1988-05-10 1989-11-14 Matsushita Electric Ind Co Ltd スパッタ装置
JPH11288799A (ja) * 1998-01-26 1999-10-19 Commiss Energ Atom 永久磁石を用いた線形マイクロ波プラズマ発生装置

Also Published As

Publication number Publication date
JPH0583632B2 (enrdf_load_stackoverflow) 1993-11-26

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