JPS6096599A - 酸化物超伝導体薄膜の製造方法 - Google Patents
酸化物超伝導体薄膜の製造方法Info
- Publication number
- JPS6096599A JPS6096599A JP58202815A JP20281583A JPS6096599A JP S6096599 A JPS6096599 A JP S6096599A JP 58202815 A JP58202815 A JP 58202815A JP 20281583 A JP20281583 A JP 20281583A JP S6096599 A JPS6096599 A JP S6096599A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxide
- superconductive
- substrate
- bpb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 239000002131 composite material Substances 0.000 claims abstract description 7
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000002887 superconductor Substances 0.000 claims description 6
- 229910010252 TiO3 Inorganic materials 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 abstract 2
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 8
- 230000007704 transition Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910016063 BaPb Inorganic materials 0.000 description 1
- 101001133899 Protobothrops flavoviridis Basic phospholipase A2 BP-II Proteins 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58202815A JPS6096599A (ja) | 1983-10-31 | 1983-10-31 | 酸化物超伝導体薄膜の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58202815A JPS6096599A (ja) | 1983-10-31 | 1983-10-31 | 酸化物超伝導体薄膜の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6096599A true JPS6096599A (ja) | 1985-05-30 |
JPH0218320B2 JPH0218320B2 (enrdf_load_stackoverflow) | 1990-04-25 |
Family
ID=16463654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58202815A Granted JPS6096599A (ja) | 1983-10-31 | 1983-10-31 | 酸化物超伝導体薄膜の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6096599A (enrdf_load_stackoverflow) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63228696A (ja) * | 1987-03-18 | 1988-09-22 | Hitachi Ltd | 電子装置 |
JPS63236219A (ja) * | 1987-03-24 | 1988-10-03 | Furukawa Electric Co Ltd:The | 超電導線の製造方法 |
JPS6460925A (en) * | 1987-08-31 | 1989-03-08 | Semiconductor Energy Lab | Fabricating method for superconductive material |
JPS6487763A (en) * | 1987-05-26 | 1989-03-31 | Sumitomo Electric Industries | Superconducting material |
JPH01290596A (ja) * | 1988-05-16 | 1989-11-22 | Nippon Telegr & Teleph Corp <Ntt> | 酸化物超伝導薄膜の形成方法 |
JPH029795A (ja) * | 1988-03-06 | 1990-01-12 | Internatl Business Mach Corp <Ibm> | 超伝導物質の製造方法 |
US5057201A (en) * | 1987-03-14 | 1991-10-15 | Sumitomo Electric Industries, Ltd. | Process for depositing a superconducting thin film |
JPH05508610A (ja) * | 1990-05-31 | 1993-12-02 | ベル コミュニケーションズ リサーチ インコーポレーテッド | a,b軸方向のペロブスカイト薄膜の成長方法 |
US5478800A (en) * | 1987-02-05 | 1995-12-26 | Sumitomo Electric Industries, Ltd. | Process for preparing a superconducting thin film |
-
1983
- 1983-10-31 JP JP58202815A patent/JPS6096599A/ja active Granted
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5478800A (en) * | 1987-02-05 | 1995-12-26 | Sumitomo Electric Industries, Ltd. | Process for preparing a superconducting thin film |
US5057201A (en) * | 1987-03-14 | 1991-10-15 | Sumitomo Electric Industries, Ltd. | Process for depositing a superconducting thin film |
JPS63228696A (ja) * | 1987-03-18 | 1988-09-22 | Hitachi Ltd | 電子装置 |
JPS63236219A (ja) * | 1987-03-24 | 1988-10-03 | Furukawa Electric Co Ltd:The | 超電導線の製造方法 |
JPS6487763A (en) * | 1987-05-26 | 1989-03-31 | Sumitomo Electric Industries | Superconducting material |
JPS6460925A (en) * | 1987-08-31 | 1989-03-08 | Semiconductor Energy Lab | Fabricating method for superconductive material |
JPH029795A (ja) * | 1988-03-06 | 1990-01-12 | Internatl Business Mach Corp <Ibm> | 超伝導物質の製造方法 |
JPH01290596A (ja) * | 1988-05-16 | 1989-11-22 | Nippon Telegr & Teleph Corp <Ntt> | 酸化物超伝導薄膜の形成方法 |
JPH05508610A (ja) * | 1990-05-31 | 1993-12-02 | ベル コミュニケーションズ リサーチ インコーポレーテッド | a,b軸方向のペロブスカイト薄膜の成長方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0218320B2 (enrdf_load_stackoverflow) | 1990-04-25 |
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