JPS6094728A - 荷電粒子ビームを用いた加工方法およびその装置 - Google Patents

荷電粒子ビームを用いた加工方法およびその装置

Info

Publication number
JPS6094728A
JPS6094728A JP58201764A JP20176483A JPS6094728A JP S6094728 A JPS6094728 A JP S6094728A JP 58201764 A JP58201764 A JP 58201764A JP 20176483 A JP20176483 A JP 20176483A JP S6094728 A JPS6094728 A JP S6094728A
Authority
JP
Japan
Prior art keywords
charged particle
sample
organic gas
particle beam
charged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58201764A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0132494B2 (Sortimente
Inventor
Masahiro Yamamoto
昌宏 山本
Yoshitomo Nakagawa
良知 中川
Takashi Minafuji
孝 皆藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP58201764A priority Critical patent/JPS6094728A/ja
Publication of JPS6094728A publication Critical patent/JPS6094728A/ja
Publication of JPH0132494B2 publication Critical patent/JPH0132494B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • ing And Chemical Polishing (AREA)
  • Electron Beam Exposure (AREA)
JP58201764A 1983-10-27 1983-10-27 荷電粒子ビームを用いた加工方法およびその装置 Granted JPS6094728A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58201764A JPS6094728A (ja) 1983-10-27 1983-10-27 荷電粒子ビームを用いた加工方法およびその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58201764A JPS6094728A (ja) 1983-10-27 1983-10-27 荷電粒子ビームを用いた加工方法およびその装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2143699A Division JPH0315068A (ja) 1990-06-01 1990-06-01 パターン修正方法
JP2143698A Division JPH0316112A (ja) 1990-06-01 1990-06-01 イオンビーム加工装置

Publications (2)

Publication Number Publication Date
JPS6094728A true JPS6094728A (ja) 1985-05-27
JPH0132494B2 JPH0132494B2 (Sortimente) 1989-07-04

Family

ID=16446543

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58201764A Granted JPS6094728A (ja) 1983-10-27 1983-10-27 荷電粒子ビームを用いた加工方法およびその装置

Country Status (1)

Country Link
JP (1) JPS6094728A (Sortimente)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6125146A (ja) * 1984-07-13 1986-02-04 Hitachi Ltd フオトマスク欠陥修正方法
JPS6373252A (ja) * 1986-08-27 1988-04-02 エヌ・ベ−・フィリップス・フル−イランペンファブリケン パタ−ン仕上げ装置
JPH01150139A (ja) * 1987-11-09 1989-06-13 American Teleph & Telegr Co <Att> デバイスのマスク修正プロセスとマスク
US4930439A (en) * 1984-06-26 1990-06-05 Seiko Instruments Inc. Mask-repairing device
US4950498A (en) * 1986-02-24 1990-08-21 Seiko Instruments Inc. Process for repairing pattern film
US5071671A (en) * 1984-02-28 1991-12-10 Seiko Instruments Inc. Process for forming pattern films

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270991A (en) * 1975-12-10 1977-06-13 Mitsubishi Electric Corp Gas phase reactor by use of laser
JPS53135276A (en) * 1977-04-30 1978-11-25 Mitsubishi Electric Corp Correcting method for defect of photomask
JPS5428313A (en) * 1977-08-03 1979-03-02 Mitsubishi Heavy Ind Ltd Bonding method of carbon material
JPS55150225A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Method of correcting white spot fault of photomask
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270991A (en) * 1975-12-10 1977-06-13 Mitsubishi Electric Corp Gas phase reactor by use of laser
JPS53135276A (en) * 1977-04-30 1978-11-25 Mitsubishi Electric Corp Correcting method for defect of photomask
JPS5428313A (en) * 1977-08-03 1979-03-02 Mitsubishi Heavy Ind Ltd Bonding method of carbon material
JPS55150225A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Method of correcting white spot fault of photomask
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5071671A (en) * 1984-02-28 1991-12-10 Seiko Instruments Inc. Process for forming pattern films
US4930439A (en) * 1984-06-26 1990-06-05 Seiko Instruments Inc. Mask-repairing device
JPS6125146A (ja) * 1984-07-13 1986-02-04 Hitachi Ltd フオトマスク欠陥修正方法
US4950498A (en) * 1986-02-24 1990-08-21 Seiko Instruments Inc. Process for repairing pattern film
JPS6373252A (ja) * 1986-08-27 1988-04-02 エヌ・ベ−・フィリップス・フル−イランペンファブリケン パタ−ン仕上げ装置
JPH01150139A (ja) * 1987-11-09 1989-06-13 American Teleph & Telegr Co <Att> デバイスのマスク修正プロセスとマスク

Also Published As

Publication number Publication date
JPH0132494B2 (Sortimente) 1989-07-04

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