JPS6092630A - Marking method of semiconductor device - Google Patents
Marking method of semiconductor deviceInfo
- Publication number
- JPS6092630A JPS6092630A JP20038983A JP20038983A JPS6092630A JP S6092630 A JPS6092630 A JP S6092630A JP 20038983 A JP20038983 A JP 20038983A JP 20038983 A JP20038983 A JP 20038983A JP S6092630 A JPS6092630 A JP S6092630A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- marking
- ink
- wafer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体装置のマーキング方法に関するものでる
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for marking semiconductor devices.
半導体ウェハー上に形成された半導体装置をウェハー状
態のまま載物台に載せ、間欠送シをしながら半導体装置
の電気的特性を自動的に測定し、良品と不良品を判別す
る検査装置がるる。従来、判定結果は不良品のウェハー
表面に印をつけることによって示す方法が行なわれてお
シ、インクで打点するインクマーキングの他に針で傷を
打点するスクラッチマーキング、レーザー光でウェハー
表面を溶かすレーザーマーキング寺が用いられている。We have an inspection device that automatically measures the electrical characteristics of semiconductor devices formed on a semiconductor wafer by placing them in wafer state on a stage and performing intermittent feeding to distinguish between good and defective products. . Conventionally, the results of judgment have been shown by marking the wafer surface of defective products.In addition to ink marking, which involves making dots with ink, scratch marking, which makes scratches with a needle, and melting the wafer surface with laser light, Laser marking temple is used.
上記のうちスクラッチマーキングとレーザーマーキング
は不良と判定された半導体装置を傷つけてしまうため、
検査装置の故障等によシ誤判定して良品にマーキングし
た場合、再生することが不可能である。また、インクマ
ーキングは非破壊マーキングなので半導体装置の再生は
可能であるが、半導体ウェハー表面にインクでマーキン
グするためインク中の不純物によシ半導体装置が汚染さ
れ品質上問題がめる〇
本発明の目的は、マーキングによって半導体装置の信頼
性に影脅が及はされず、かつ、マーキングによって半導
体装置が破壊されず再生が可能であるような半導体装置
のマーキング方法を提供することにるる。Of the above, scratch marking and laser marking can damage semiconductor devices that are determined to be defective.
If a product is marked as non-defective due to a malfunction of the inspection device, it is impossible to reproduce the product. In addition, since ink marking is non-destructive marking, it is possible to recycle the semiconductor device, but since the ink is used to mark the surface of the semiconductor wafer, impurities in the ink contaminate the semiconductor device and cause quality problems.The purpose of the present invention is to An object of the present invention is to provide a method for marking a semiconductor device in which the reliability of the semiconductor device is not affected by the marking, and the semiconductor device is not destroyed by the marking and can be recycled.
本発明は、半導体ウェハー上に形成された半導体装置を
電気的に測定して良否の判定を行ない、その判定結果に
基づいてインクマーキングを行なう際に、予め前記半導
体装置をインク打点に対する保護膜でおおっておくこと
を特徴とする。The present invention electrically measures a semiconductor device formed on a semiconductor wafer to determine whether it is good or bad, and when ink marking is performed based on the determination result, the semiconductor device is coated with a protective film for ink dots in advance. It is characterized by keeping it covered.
本発明によれば、半導体ウェハーは保護膜でおおわれて
いるので、インクマーキングを行なっても半導体装置が
インクで汚染されず信頼性上問題となることがない。ま
た、半導体装置がｉ−キングによって破壊されることも
ないので、半導体測定装置の故障等によシ誤判定して良
品にｉ−キングした場合でも再生することが可能である
。According to the present invention, since the semiconductor wafer is covered with a protective film, even if ink marking is performed, the semiconductor device is not contaminated with ink and there is no problem in terms of reliability. Further, since the semiconductor device is not destroyed by i-king, it is possible to regenerate it even if the semiconductor device is erroneously determined to be non-defective due to failure of the semiconductor measuring device or the like.
次に本発明の実施例を図面を用いて説明する。Next, embodiments of the present invention will be described using the drawings.
第１図は半導体装置を本発明のマーキング方法によシマ
ーキングしている様子を表わす。検査装置の載物台７上
に真空吸着されている半導体ウェハー６の表面には半導
体装１１５が形成されている。FIG. 1 shows how a semiconductor device is marked by the marking method of the present invention. A semiconductor device 115 is formed on the surface of the semiconductor wafer 6 that is vacuum-adsorbed onto the stage 7 of the inspection device.
さらに半導体装置５の表面にはインクマーキングの保護
膜としてフォトレジスト４が塗布されてるる。プローブ
カード２に付属する測定用探針３を半導体装置５にあて
、測定装置８で半導体装置５の良否を判定し、その判定
結果に基づいて不良の半導体装置にインカー１でインク
マーキングしていく〇
第２図は半導体ウェハーの表面にインクマーキングによ
シマーキングした様子を表わす。インク打点９は半導体
装ｒＲ５の表面に塗布されたフォトレジスト４上につけ
られるので半導体装置５は汚染される仁となく、インク
により信頼性が低下する心配はない。また、このマーキ
ングによシ半導体装置５は破壊されないので、再生も可
能である。Further, a photoresist 4 is applied to the surface of the semiconductor device 5 as a protective film for ink marking. The measuring probe 3 attached to the probe card 2 is applied to the semiconductor device 5, the measuring device 8 determines whether the semiconductor device 5 is good or bad, and the inker 1 marks the defective semiconductor device with ink based on the determination result. 〇Figure 2 shows how the surface of a semiconductor wafer is marked with ink markings. Since the ink dots 9 are placed on the photoresist 4 coated on the surface of the semiconductor device rR5, the semiconductor device 5 will not be contaminated and there will be no fear that the reliability will be degraded by the ink. Furthermore, since the semiconductor device 5 is not destroyed by this marking, it can be recycled.
又、表面保護材４は、フォトレジストのみでなく他の合
成樹脂でめっでもかまわない。またインクマーキングの
後、誤判定のないことを確認してからスクラッチマーク
打点を行い、保護材を除去してもよい。Furthermore, the surface protection material 4 may be made of not only photoresist but also other synthetic resins. Further, after ink marking, scratch marks may be placed after confirming that there are no erroneous determinations, and the protective material may be removed.
第１図は半導体装置を本発明のマーキング方法によシマ
ーキングしている様子を表わす図、第２図は半導体ウェ
ハーの表面にインクマーキングによシマーキングした様
子を表わす上面図である。
１・・・・・・インカー、２・・・・・・プローブカー
ド、３・・・・・・測定用探針、４・・・・・・７オ）
Ｌ／シスト、５・・・・・・半導体ウェハー表面に形成
された半導体装置、６・・・・・・半導体ウェハー、７
・・・・・・載物台、８・・・・・・半導体装置の良否
判定の測定装置、９・・・・・・インカーによってつけ
られたインク打点。FIG. 1 is a diagram showing how a semiconductor device is marked by the marking method of the present invention, and FIG. 2 is a top view showing how the surface of a semiconductor wafer is marked by ink marking. 1...Inker, 2...Probe card, 3...Measurement probe, 4...7o)
L/cyst, 5... Semiconductor device formed on the surface of a semiconductor wafer, 6... Semiconductor wafer, 7
. . . Mounting stage, 8 . . . Measuring device for determining the quality of semiconductor devices, 9 . . . Ink dots made by an inker.
Claims (1)
定して良否の判定を行い、その判定結果に基づいて、良
否のマークをつけるマーキング方法において、ウェハー
表面を保膜材で覆った後、インクによるマーキングを行
うことを特徴とする半導体装置のマーキング方法。In this marking method, a semiconductor device formed on a semiconductor wafer is electrically measured to determine whether it is good or bad, and a mark is made based on the judgment result. 1. A method for marking a semiconductor device, the method comprising marking a semiconductor device using a method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20038983A JPS6092630A (en) | 1983-10-26 | 1983-10-26 | Marking method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20038983A JPS6092630A (en) | 1983-10-26 | 1983-10-26 | Marking method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6092630A true JPS6092630A (en) | 1985-05-24 |
Family
ID=16423511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20038983A Pending JPS6092630A (en) | 1983-10-26 | 1983-10-26 | Marking method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6092630A (en) |
-
1983
- 1983-10-26 JP JP20038983A patent/JPS6092630A/en active Pending
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