JPS6092475A - 光化学的薄膜製造方法および装置 - Google Patents
光化学的薄膜製造方法および装置Info
- Publication number
- JPS6092475A JPS6092475A JP19969783A JP19969783A JPS6092475A JP S6092475 A JPS6092475 A JP S6092475A JP 19969783 A JP19969783 A JP 19969783A JP 19969783 A JP19969783 A JP 19969783A JP S6092475 A JPS6092475 A JP S6092475A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- necessary
- reaction chamber
- gas
- photochemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19969783A JPS6092475A (ja) | 1983-10-25 | 1983-10-25 | 光化学的薄膜製造方法および装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19969783A JPS6092475A (ja) | 1983-10-25 | 1983-10-25 | 光化学的薄膜製造方法および装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6092475A true JPS6092475A (ja) | 1985-05-24 |
JPH0380871B2 JPH0380871B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-12-26 |
Family
ID=16412105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19969783A Granted JPS6092475A (ja) | 1983-10-25 | 1983-10-25 | 光化学的薄膜製造方法および装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6092475A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6345371A (ja) * | 1986-03-31 | 1988-02-26 | Canon Inc | 堆積膜形成法 |
JP2014131036A (ja) * | 2007-08-17 | 2014-07-10 | Semiconductor Energy Lab Co Ltd | 成膜装置 |
-
1983
- 1983-10-25 JP JP19969783A patent/JPS6092475A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6345371A (ja) * | 1986-03-31 | 1988-02-26 | Canon Inc | 堆積膜形成法 |
JP2014131036A (ja) * | 2007-08-17 | 2014-07-10 | Semiconductor Energy Lab Co Ltd | 成膜装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0380871B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1991-12-26 |