JPH0582477B2 - - Google Patents
Info
- Publication number
- JPH0582477B2 JPH0582477B2 JP5457485A JP5457485A JPH0582477B2 JP H0582477 B2 JPH0582477 B2 JP H0582477B2 JP 5457485 A JP5457485 A JP 5457485A JP 5457485 A JP5457485 A JP 5457485A JP H0582477 B2 JPH0582477 B2 JP H0582477B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- raw material
- thin film
- pulsed light
- material gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 31
- 238000006243 chemical reaction Methods 0.000 claims description 28
- 239000002994 raw material Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 10
- 239000012808 vapor phase Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 29
- 230000003287 optical effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5457485A JPS61217575A (ja) | 1985-03-20 | 1985-03-20 | 光化学気相薄膜形成装置及び方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5457485A JPS61217575A (ja) | 1985-03-20 | 1985-03-20 | 光化学気相薄膜形成装置及び方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61217575A JPS61217575A (ja) | 1986-09-27 |
| JPH0582477B2 true JPH0582477B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-11-19 |
Family
ID=12974461
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5457485A Granted JPS61217575A (ja) | 1985-03-20 | 1985-03-20 | 光化学気相薄膜形成装置及び方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61217575A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2544156B2 (ja) * | 1987-09-22 | 1996-10-16 | 財団法人半導体研究振興会 | 金属・半導体接触の形成方法 |
-
1985
- 1985-03-20 JP JP5457485A patent/JPS61217575A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61217575A (ja) | 1986-09-27 |
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