JPS61217575A - 光化学気相薄膜形成装置及び方法 - Google Patents

光化学気相薄膜形成装置及び方法

Info

Publication number
JPS61217575A
JPS61217575A JP5457485A JP5457485A JPS61217575A JP S61217575 A JPS61217575 A JP S61217575A JP 5457485 A JP5457485 A JP 5457485A JP 5457485 A JP5457485 A JP 5457485A JP S61217575 A JPS61217575 A JP S61217575A
Authority
JP
Japan
Prior art keywords
thin film
substrate
reaction vessel
raw material
material gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5457485A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0582477B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Eisuke Nishitani
英輔 西谷
Susumu Tsujiku
都竹 進
Mitsuo Nakatani
中谷 光雄
Akira Shintani
新谷 昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5457485A priority Critical patent/JPS61217575A/ja
Publication of JPS61217575A publication Critical patent/JPS61217575A/ja
Publication of JPH0582477B2 publication Critical patent/JPH0582477B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP5457485A 1985-03-20 1985-03-20 光化学気相薄膜形成装置及び方法 Granted JPS61217575A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5457485A JPS61217575A (ja) 1985-03-20 1985-03-20 光化学気相薄膜形成装置及び方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5457485A JPS61217575A (ja) 1985-03-20 1985-03-20 光化学気相薄膜形成装置及び方法

Publications (2)

Publication Number Publication Date
JPS61217575A true JPS61217575A (ja) 1986-09-27
JPH0582477B2 JPH0582477B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-11-19

Family

ID=12974461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5457485A Granted JPS61217575A (ja) 1985-03-20 1985-03-20 光化学気相薄膜形成装置及び方法

Country Status (1)

Country Link
JP (1) JPS61217575A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6481220A (en) * 1987-09-22 1989-03-27 Semiconductor Res Found Formation of metal and semiconductor contact

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6481220A (en) * 1987-09-22 1989-03-27 Semiconductor Res Found Formation of metal and semiconductor contact

Also Published As

Publication number Publication date
JPH0582477B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-11-19

Similar Documents

Publication Publication Date Title
US4678536A (en) Method of photochemical surface treatment
JPS599164A (ja) 耐火金属層を基板上に光沈着させる方法
US4645687A (en) Deposition of III-V semiconductor materials
JPS61217575A (ja) 光化学気相薄膜形成装置及び方法
Yabushita et al. Hydrogen peroxide formation following the vacuum ultraviolet photodissociation of water ice films at 90K
Taguchi et al. Enhancement of film deposition rate due to the production of Si2H6 as an intermediate in the photodecomposition of SiH4 using an ArF excimer laser
JPH0774452B2 (ja) 光化学気相成長法による機能性堆積膜の形成方法
EP0107686B1 (fr) Procede et dispositif de production de photons dans la gamme des longueurs d'ondes ultraviolettes
JPS59208065A (ja) レ−ザ金属堆積方法
Seki et al. Laser-induced chemical vapor deposition of aluminum from trimethylaluminum: wavelength and temperature dependence
JPS63317675A (ja) プラズマ気相成長装置
JP2608456B2 (ja) 薄膜形成装置
JPH0257145B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS61224318A (ja) 気相薄膜形成装置及び方法
JPS629189B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS61119028A (ja) 光化学気相成長装置
JPS6028225A (ja) 光気相成長法
JPS5940525A (ja) 成膜方法
JPH0978245A (ja) 薄膜形成方法
JPS6156279A (ja) 成膜方法
JPH0459769B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6118122A (ja) 半導体製造装置
JPH1018040A (ja) 窒化炭素の製造方法及びその方法により得られる窒化炭素
JPS62205279A (ja) レ−ザcvd法
JPS6156278A (ja) 成膜方法