JPS61217575A - 光化学気相薄膜形成装置及び方法 - Google Patents
光化学気相薄膜形成装置及び方法Info
- Publication number
- JPS61217575A JPS61217575A JP5457485A JP5457485A JPS61217575A JP S61217575 A JPS61217575 A JP S61217575A JP 5457485 A JP5457485 A JP 5457485A JP 5457485 A JP5457485 A JP 5457485A JP S61217575 A JPS61217575 A JP S61217575A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- substrate
- reaction vessel
- raw material
- material gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5457485A JPS61217575A (ja) | 1985-03-20 | 1985-03-20 | 光化学気相薄膜形成装置及び方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5457485A JPS61217575A (ja) | 1985-03-20 | 1985-03-20 | 光化学気相薄膜形成装置及び方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61217575A true JPS61217575A (ja) | 1986-09-27 |
JPH0582477B2 JPH0582477B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-11-19 |
Family
ID=12974461
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5457485A Granted JPS61217575A (ja) | 1985-03-20 | 1985-03-20 | 光化学気相薄膜形成装置及び方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61217575A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6481220A (en) * | 1987-09-22 | 1989-03-27 | Semiconductor Res Found | Formation of metal and semiconductor contact |
-
1985
- 1985-03-20 JP JP5457485A patent/JPS61217575A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6481220A (en) * | 1987-09-22 | 1989-03-27 | Semiconductor Res Found | Formation of metal and semiconductor contact |
Also Published As
Publication number | Publication date |
---|---|
JPH0582477B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-11-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4678536A (en) | Method of photochemical surface treatment | |
JPS599164A (ja) | 耐火金属層を基板上に光沈着させる方法 | |
US4645687A (en) | Deposition of III-V semiconductor materials | |
JPS61217575A (ja) | 光化学気相薄膜形成装置及び方法 | |
Yabushita et al. | Hydrogen peroxide formation following the vacuum ultraviolet photodissociation of water ice films at 90K | |
Taguchi et al. | Enhancement of film deposition rate due to the production of Si2H6 as an intermediate in the photodecomposition of SiH4 using an ArF excimer laser | |
JPH0774452B2 (ja) | 光化学気相成長法による機能性堆積膜の形成方法 | |
EP0107686B1 (fr) | Procede et dispositif de production de photons dans la gamme des longueurs d'ondes ultraviolettes | |
JPS59208065A (ja) | レ−ザ金属堆積方法 | |
Seki et al. | Laser-induced chemical vapor deposition of aluminum from trimethylaluminum: wavelength and temperature dependence | |
JPS63317675A (ja) | プラズマ気相成長装置 | |
JP2608456B2 (ja) | 薄膜形成装置 | |
JPH0257145B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPS61224318A (ja) | 気相薄膜形成装置及び方法 | |
JPS629189B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPS61119028A (ja) | 光化学気相成長装置 | |
JPS6028225A (ja) | 光気相成長法 | |
JPS5940525A (ja) | 成膜方法 | |
JPH0978245A (ja) | 薄膜形成方法 | |
JPS6156279A (ja) | 成膜方法 | |
JPH0459769B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPS6118122A (ja) | 半導体製造装置 | |
JPH1018040A (ja) | 窒化炭素の製造方法及びその方法により得られる窒化炭素 | |
JPS62205279A (ja) | レ−ザcvd法 | |
JPS6156278A (ja) | 成膜方法 |