JPS6074622A - マスクパタ−ン修正方法 - Google Patents

マスクパタ−ン修正方法

Info

Publication number
JPS6074622A
JPS6074622A JP58182024A JP18202483A JPS6074622A JP S6074622 A JPS6074622 A JP S6074622A JP 58182024 A JP58182024 A JP 58182024A JP 18202483 A JP18202483 A JP 18202483A JP S6074622 A JPS6074622 A JP S6074622A
Authority
JP
Japan
Prior art keywords
pattern
residual chromium
correction method
mask pattern
effective pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58182024A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6259297B2 (enrdf_load_stackoverflow
Inventor
Toshihiko Osada
俊彦 長田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58182024A priority Critical patent/JPS6074622A/ja
Publication of JPS6074622A publication Critical patent/JPS6074622A/ja
Publication of JPS6259297B2 publication Critical patent/JPS6259297B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP58182024A 1983-09-30 1983-09-30 マスクパタ−ン修正方法 Granted JPS6074622A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58182024A JPS6074622A (ja) 1983-09-30 1983-09-30 マスクパタ−ン修正方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58182024A JPS6074622A (ja) 1983-09-30 1983-09-30 マスクパタ−ン修正方法

Publications (2)

Publication Number Publication Date
JPS6074622A true JPS6074622A (ja) 1985-04-26
JPS6259297B2 JPS6259297B2 (enrdf_load_stackoverflow) 1987-12-10

Family

ID=16111002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58182024A Granted JPS6074622A (ja) 1983-09-30 1983-09-30 マスクパタ−ン修正方法

Country Status (1)

Country Link
JP (1) JPS6074622A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6259297B2 (enrdf_load_stackoverflow) 1987-12-10

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