JPS6074578A - 不揮発性半導体メモリ装置 - Google Patents

不揮発性半導体メモリ装置

Info

Publication number
JPS6074578A
JPS6074578A JP58180513A JP18051383A JPS6074578A JP S6074578 A JPS6074578 A JP S6074578A JP 58180513 A JP58180513 A JP 58180513A JP 18051383 A JP18051383 A JP 18051383A JP S6074578 A JPS6074578 A JP S6074578A
Authority
JP
Japan
Prior art keywords
memory
memory cell
rewriting
floating gate
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58180513A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0130240B2 (enrdf_load_stackoverflow
Inventor
Yasuo Ito
寧夫 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58180513A priority Critical patent/JPS6074578A/ja
Publication of JPS6074578A publication Critical patent/JPS6074578A/ja
Publication of JPH0130240B2 publication Critical patent/JPH0130240B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP58180513A 1983-09-30 1983-09-30 不揮発性半導体メモリ装置 Granted JPS6074578A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58180513A JPS6074578A (ja) 1983-09-30 1983-09-30 不揮発性半導体メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58180513A JPS6074578A (ja) 1983-09-30 1983-09-30 不揮発性半導体メモリ装置

Publications (2)

Publication Number Publication Date
JPS6074578A true JPS6074578A (ja) 1985-04-26
JPH0130240B2 JPH0130240B2 (enrdf_load_stackoverflow) 1989-06-16

Family

ID=16084563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58180513A Granted JPS6074578A (ja) 1983-09-30 1983-09-30 不揮発性半導体メモリ装置

Country Status (1)

Country Link
JP (1) JPS6074578A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236799A (ja) * 1985-08-09 1987-02-17 Hitachi Ltd 不揮発性記憶装置
JPH06150672A (ja) * 1992-11-12 1994-05-31 Nec Corp 不揮発性半導体記憶装置
US6240032B1 (en) 1997-11-27 2001-05-29 Sharp Kabushiki Kaisha Non-volatile semiconductor memory allowing user to enter various refresh commands
JP2006338808A (ja) * 2005-06-03 2006-12-14 Sharp Corp 半導体不揮発性メモリ装置およびそれを備えた携帯情報端末機器
JP2010135036A (ja) * 2008-12-08 2010-06-17 Fujitsu Ltd 不揮発性メモリ、メモリ制御装置、メモリ制御システムおよび不揮発性メモリの制御方法
JP2019212351A (ja) * 2018-06-05 2019-12-12 三重富士通セミコンダクター株式会社 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の書き換え方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236799A (ja) * 1985-08-09 1987-02-17 Hitachi Ltd 不揮発性記憶装置
JPH06150672A (ja) * 1992-11-12 1994-05-31 Nec Corp 不揮発性半導体記憶装置
US6240032B1 (en) 1997-11-27 2001-05-29 Sharp Kabushiki Kaisha Non-volatile semiconductor memory allowing user to enter various refresh commands
JP2006338808A (ja) * 2005-06-03 2006-12-14 Sharp Corp 半導体不揮発性メモリ装置およびそれを備えた携帯情報端末機器
JP2010135036A (ja) * 2008-12-08 2010-06-17 Fujitsu Ltd 不揮発性メモリ、メモリ制御装置、メモリ制御システムおよび不揮発性メモリの制御方法
US8391067B2 (en) 2008-12-08 2013-03-05 Fujitsu Limited Nonvolatile memory
JP2019212351A (ja) * 2018-06-05 2019-12-12 三重富士通セミコンダクター株式会社 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の書き換え方法

Also Published As

Publication number Publication date
JPH0130240B2 (enrdf_load_stackoverflow) 1989-06-16

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