JPS607121A - 超格子の構造 - Google Patents

超格子の構造

Info

Publication number
JPS607121A
JPS607121A JP58113801A JP11380183A JPS607121A JP S607121 A JPS607121 A JP S607121A JP 58113801 A JP58113801 A JP 58113801A JP 11380183 A JP11380183 A JP 11380183A JP S607121 A JPS607121 A JP S607121A
Authority
JP
Japan
Prior art keywords
semiconductor layer
impurity
thickness
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58113801A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0315334B2 (enExample
Inventor
Toshio Baba
寿夫 馬場
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58113801A priority Critical patent/JPS607121A/ja
Priority to US06/624,333 priority patent/US4695857A/en
Priority to EP84304300A priority patent/EP0133342B1/en
Priority to DE8484304300T priority patent/DE3480631D1/de
Publication of JPS607121A publication Critical patent/JPS607121A/ja
Priority to US07/043,046 priority patent/US4792832A/en
Publication of JPH0315334B2 publication Critical patent/JPH0315334B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H10F77/1465—Superlattices; Multiple quantum well structures including only Group IV materials, e.g. Si-SiGe superlattices
    • H10P14/3252—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP58113801A 1983-06-24 1983-06-24 超格子の構造 Granted JPS607121A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58113801A JPS607121A (ja) 1983-06-24 1983-06-24 超格子の構造
US06/624,333 US4695857A (en) 1983-06-24 1984-06-25 Superlattice semiconductor having high carrier density
EP84304300A EP0133342B1 (en) 1983-06-24 1984-06-25 A superlattice type semiconductor structure having a high carrier density
DE8484304300T DE3480631D1 (de) 1983-06-24 1984-06-25 Halbleiterstruktur mit uebergitter hoher traegerdichte.
US07/043,046 US4792832A (en) 1983-06-24 1987-04-24 Superlattice semiconductor having high carrier density

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58113801A JPS607121A (ja) 1983-06-24 1983-06-24 超格子の構造

Publications (2)

Publication Number Publication Date
JPS607121A true JPS607121A (ja) 1985-01-14
JPH0315334B2 JPH0315334B2 (enExample) 1991-02-28

Family

ID=14621414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58113801A Granted JPS607121A (ja) 1983-06-24 1983-06-24 超格子の構造

Country Status (1)

Country Link
JP (1) JPS607121A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60231367A (ja) * 1984-04-28 1985-11-16 Fujitsu Ltd 半導体装置
JPS61210677A (ja) * 1985-03-15 1986-09-18 Sumitomo Electric Ind Ltd 化合物半導体装置
JPS61263282A (ja) * 1985-05-17 1986-11-21 Agency Of Ind Science & Technol 二次元電子電界効果型トランジスタの製造方法
JPS61278168A (ja) * 1985-05-31 1986-12-09 Sumitomo Electric Ind Ltd 化合物半導体装置
JPS61289673A (ja) * 1985-06-18 1986-12-19 Sumitomo Electric Ind Ltd 化合物半導体装置
JPS621277A (ja) * 1985-06-27 1987-01-07 Agency Of Ind Science & Technol 化合物半導体装置
JPS6254988A (ja) * 1985-09-04 1987-03-10 Hitachi Ltd 半導体レ−ザ装置
JPS62179714A (ja) * 1986-02-04 1987-08-06 Sony Corp 化合物半導体
JPS63257158A (ja) * 1987-04-14 1988-10-25 Canon Inc 電子放出素子
US4903101A (en) * 1988-03-28 1990-02-20 California Institute Of Technology Tunable quantum well infrared detector

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5395571A (en) * 1977-02-02 1978-08-21 Hitachi Ltd Semiconductor device
JPS5742116A (en) * 1980-08-26 1982-03-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor superlattice crystal
JPS57164573A (en) * 1982-02-26 1982-10-09 Hitachi Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5395571A (en) * 1977-02-02 1978-08-21 Hitachi Ltd Semiconductor device
JPS5742116A (en) * 1980-08-26 1982-03-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor superlattice crystal
JPS57164573A (en) * 1982-02-26 1982-10-09 Hitachi Ltd Semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60231367A (ja) * 1984-04-28 1985-11-16 Fujitsu Ltd 半導体装置
JPS61210677A (ja) * 1985-03-15 1986-09-18 Sumitomo Electric Ind Ltd 化合物半導体装置
JPS61263282A (ja) * 1985-05-17 1986-11-21 Agency Of Ind Science & Technol 二次元電子電界効果型トランジスタの製造方法
JPS61278168A (ja) * 1985-05-31 1986-12-09 Sumitomo Electric Ind Ltd 化合物半導体装置
JPS61289673A (ja) * 1985-06-18 1986-12-19 Sumitomo Electric Ind Ltd 化合物半導体装置
JPS621277A (ja) * 1985-06-27 1987-01-07 Agency Of Ind Science & Technol 化合物半導体装置
JPS6254988A (ja) * 1985-09-04 1987-03-10 Hitachi Ltd 半導体レ−ザ装置
WO1987001522A1 (fr) * 1985-09-04 1987-03-12 Hitachi, Ltd. Dispositif a semi-conducteurs
US4819036A (en) * 1985-09-04 1989-04-04 Hitachi, Ltd. Semiconductor device
EP0232431B1 (en) * 1985-09-04 1993-03-17 Hitachi, Ltd. Semiconductor device
JPS62179714A (ja) * 1986-02-04 1987-08-06 Sony Corp 化合物半導体
JPS63257158A (ja) * 1987-04-14 1988-10-25 Canon Inc 電子放出素子
US4903101A (en) * 1988-03-28 1990-02-20 California Institute Of Technology Tunable quantum well infrared detector

Also Published As

Publication number Publication date
JPH0315334B2 (enExample) 1991-02-28

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