JPS6068661U - Hybrid integrated circuit device - Google Patents
Hybrid integrated circuit deviceInfo
- Publication number
- JPS6068661U JPS6068661U JP1983160736U JP16073683U JPS6068661U JP S6068661 U JPS6068661 U JP S6068661U JP 1983160736 U JP1983160736 U JP 1983160736U JP 16073683 U JP16073683 U JP 16073683U JP S6068661 U JPS6068661 U JP S6068661U
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- circuit device
- hybrid integrated
- substrates
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/1627—Disposition stacked type assemblies, e.g. stacked multi-cavities
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
1゛ 第1図は本考案による混成集積回路装置の断面
図である。
1・・・・・・混成集積回路の放熱板、2・・・・・・
容器の外部引出しリード、3は容器の側壁を構成するセ
ラミック、4・・・・・・容器の側壁の金属配線、5・
・・・・・第一のセラミック基板で主要な発熱素子が搭
載されている。6・・・・・・第二のセラミック基板、
7・・・・・・第一のセラミック基板5に搭載された半
導体ペレットの一部を示す。8・・間第−のセラミック
基板上の金属配線の一部を示す。9・・・・・・第二の
セラミック基板6に搭載された半導体ペレットの一部を
示す。10・・・・・・第二のセラミック基板上の金属
配線の一部を示す。11・・・・・・セラミック基板内
及びセラミック基板と容器を接続するボンディングワイ
ヤ゛−112・・・・・・容器を封止するフタ。1. FIG. 1 is a sectional view of a hybrid integrated circuit device according to the present invention. 1... Heat sink of hybrid integrated circuit, 2...
An external drawer lead of the container, 3 is a ceramic constituting the side wall of the container, 4...Metal wiring on the side wall of the container, 5.
...The main heating elements are mounted on the first ceramic substrate. 6...Second ceramic substrate,
7... Part of the semiconductor pellet mounted on the first ceramic substrate 5 is shown. A part of the metal wiring on the 8-th ceramic substrate is shown. 9 shows a part of the semiconductor pellet mounted on the second ceramic substrate 6. 10... Part of the metal wiring on the second ceramic substrate is shown. 11...Bonding wire for connecting inside the ceramic substrate and between the ceramic substrate and the container.--112...Lid for sealing the container.
Claims (1)
の半導体ペレットが搭載され、これらの基板は互いに各
々のペレット搭載面に対してほぼ垂直方向に配置され、
かつ容器の側壁面になされた配線により基板間の電気的
接続がなされている事を特徴とする混成集積回路装置。 2 前記第1項記載の混成集積回路装置において、容器
とりつけ面に近い方の基板には動作時に発生する熱量が
多い半導体ペレットが搭載されている事を特徴とする混
成集積回路装置。[Claims for Utility Model Registration] 1. One or more semiconductor pellets are mounted on each of at least two ceramic substrates, and these substrates are arranged substantially perpendicularly to each pellet mounting surface,
A hybrid integrated circuit device characterized in that the electrical connection between the substrates is made by wiring formed on the side wall surface of the container. 2. The hybrid integrated circuit device according to item 1, wherein a semiconductor pellet that generates a large amount of heat during operation is mounted on the substrate closer to the container mounting surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1983160736U JPS6068661U (en) | 1983-10-18 | 1983-10-18 | Hybrid integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1983160736U JPS6068661U (en) | 1983-10-18 | 1983-10-18 | Hybrid integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6068661U true JPS6068661U (en) | 1985-05-15 |
Family
ID=30353452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1983160736U Pending JPS6068661U (en) | 1983-10-18 | 1983-10-18 | Hybrid integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6068661U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006278401A (en) * | 2005-03-28 | 2006-10-12 | Denso Corp | Semiconductor device |
JP2014183126A (en) * | 2013-03-18 | 2014-09-29 | Fujitsu Ltd | High frequency module |
JP2018512724A (en) * | 2015-02-10 | 2018-05-17 | コンティ テミック マイクロエレクトロニック ゲゼルシャフト ミット ベシュレンクテル ハフツングConti Temic microelectronic GmbH | Electronic component and manufacturing method thereof |
-
1983
- 1983-10-18 JP JP1983160736U patent/JPS6068661U/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006278401A (en) * | 2005-03-28 | 2006-10-12 | Denso Corp | Semiconductor device |
JP4556732B2 (en) * | 2005-03-28 | 2010-10-06 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
JP2014183126A (en) * | 2013-03-18 | 2014-09-29 | Fujitsu Ltd | High frequency module |
JP2018512724A (en) * | 2015-02-10 | 2018-05-17 | コンティ テミック マイクロエレクトロニック ゲゼルシャフト ミット ベシュレンクテル ハフツングConti Temic microelectronic GmbH | Electronic component and manufacturing method thereof |
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