JPS6068661U - Hybrid integrated circuit device - Google Patents

Hybrid integrated circuit device

Info

Publication number
JPS6068661U
JPS6068661U JP1983160736U JP16073683U JPS6068661U JP S6068661 U JPS6068661 U JP S6068661U JP 1983160736 U JP1983160736 U JP 1983160736U JP 16073683 U JP16073683 U JP 16073683U JP S6068661 U JPS6068661 U JP S6068661U
Authority
JP
Japan
Prior art keywords
integrated circuit
circuit device
hybrid integrated
substrates
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1983160736U
Other languages
Japanese (ja)
Inventor
賢太郎 石田
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP1983160736U priority Critical patent/JPS6068661U/en
Publication of JPS6068661U publication Critical patent/JPS6068661U/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/162Disposition
    • H01L2924/1627Disposition stacked type assemblies, e.g. stacked multi-cavities

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

1゛  第1図は本考案による混成集積回路装置の断面
図である。 1・・・・・・混成集積回路の放熱板、2・・・・・・
容器の外部引出しリード、3は容器の側壁を構成するセ
ラミック、4・・・・・・容器の側壁の金属配線、5・
・・・・・第一のセラミック基板で主要な発熱素子が搭
載されている。6・・・・・・第二のセラミック基板、
7・・・・・・第一のセラミック基板5に搭載された半
導体ペレットの一部を示す。8・・間第−のセラミック
基板上の金属配線の一部を示す。9・・・・・・第二の
セラミック基板6に搭載された半導体ペレットの一部を
示す。10・・・・・・第二のセラミック基板上の金属
配線の一部を示す。11・・・・・・セラミック基板内
及びセラミック基板と容器を接続するボンディングワイ
ヤ゛−112・・・・・・容器を封止するフタ。
1. FIG. 1 is a sectional view of a hybrid integrated circuit device according to the present invention. 1... Heat sink of hybrid integrated circuit, 2...
An external drawer lead of the container, 3 is a ceramic constituting the side wall of the container, 4...Metal wiring on the side wall of the container, 5.
...The main heating elements are mounted on the first ceramic substrate. 6...Second ceramic substrate,
7... Part of the semiconductor pellet mounted on the first ceramic substrate 5 is shown. A part of the metal wiring on the 8-th ceramic substrate is shown. 9 shows a part of the semiconductor pellet mounted on the second ceramic substrate 6. 10... Part of the metal wiring on the second ceramic substrate is shown. 11...Bonding wire for connecting inside the ceramic substrate and between the ceramic substrate and the container.--112...Lid for sealing the container.

Claims (1)

【実用新案登録請求の範囲】 1 少なくとも2枚のセラミック基板の各々に一つ以上
の半導体ペレットが搭載され、これらの基板は互いに各
々のペレット搭載面に対してほぼ垂直方向に配置され、
かつ容器の側壁面になされた配線により基板間の電気的
接続がなされている事を特徴とする混成集積回路装置。 2 前記第1項記載の混成集積回路装置において、容器
とりつけ面に近い方の基板には動作時に発生する熱量が
多い半導体ペレットが搭載されている事を特徴とする混
成集積回路装置。
[Claims for Utility Model Registration] 1. One or more semiconductor pellets are mounted on each of at least two ceramic substrates, and these substrates are arranged substantially perpendicularly to each pellet mounting surface,
A hybrid integrated circuit device characterized in that the electrical connection between the substrates is made by wiring formed on the side wall surface of the container. 2. The hybrid integrated circuit device according to item 1, wherein a semiconductor pellet that generates a large amount of heat during operation is mounted on the substrate closer to the container mounting surface.
JP1983160736U 1983-10-18 1983-10-18 Hybrid integrated circuit device Pending JPS6068661U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1983160736U JPS6068661U (en) 1983-10-18 1983-10-18 Hybrid integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1983160736U JPS6068661U (en) 1983-10-18 1983-10-18 Hybrid integrated circuit device

Publications (1)

Publication Number Publication Date
JPS6068661U true JPS6068661U (en) 1985-05-15

Family

ID=30353452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1983160736U Pending JPS6068661U (en) 1983-10-18 1983-10-18 Hybrid integrated circuit device

Country Status (1)

Country Link
JP (1) JPS6068661U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278401A (en) * 2005-03-28 2006-10-12 Denso Corp Semiconductor device
JP2014183126A (en) * 2013-03-18 2014-09-29 Fujitsu Ltd High frequency module
JP2018512724A (en) * 2015-02-10 2018-05-17 コンティ テミック マイクロエレクトロニック ゲゼルシャフト ミット ベシュレンクテル ハフツングConti Temic microelectronic GmbH Electronic component and manufacturing method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278401A (en) * 2005-03-28 2006-10-12 Denso Corp Semiconductor device
JP4556732B2 (en) * 2005-03-28 2010-10-06 株式会社デンソー Semiconductor device and manufacturing method thereof
JP2014183126A (en) * 2013-03-18 2014-09-29 Fujitsu Ltd High frequency module
JP2018512724A (en) * 2015-02-10 2018-05-17 コンティ テミック マイクロエレクトロニック ゲゼルシャフト ミット ベシュレンクテル ハフツングConti Temic microelectronic GmbH Electronic component and manufacturing method thereof

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