JPS6063372A - 高硬度窒化ホウ素薄膜の製造方法 - Google Patents
高硬度窒化ホウ素薄膜の製造方法Info
- Publication number
- JPS6063372A JPS6063372A JP58171217A JP17121783A JPS6063372A JP S6063372 A JPS6063372 A JP S6063372A JP 58171217 A JP58171217 A JP 58171217A JP 17121783 A JP17121783 A JP 17121783A JP S6063372 A JPS6063372 A JP S6063372A
- Authority
- JP
- Japan
- Prior art keywords
- boron
- substrate
- ions
- ion
- boron nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 19
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 150000002500 ions Chemical class 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000001704 evaporation Methods 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052796 boron Inorganic materials 0.000 claims abstract description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 239000011261 inert gas Chemical group 0.000 claims abstract description 6
- 238000007740 vapor deposition Methods 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims description 25
- 230000008020 evaporation Effects 0.000 claims description 19
- -1 nitrogen atom ions Chemical class 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 claims description 2
- 150000001639 boron compounds Chemical class 0.000 claims 1
- 239000011195 cermet Substances 0.000 claims 1
- 239000006104 solid solution Substances 0.000 claims 1
- 230000002269 spontaneous effect Effects 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 abstract 3
- 238000000034 method Methods 0.000 description 32
- 241000894007 species Species 0.000 description 20
- 230000001133 acceleration Effects 0.000 description 16
- 125000004429 atom Chemical group 0.000 description 14
- 239000010408 film Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 240000000249 Morus alba Species 0.000 description 1
- 235000008708 Morus alba Nutrition 0.000 description 1
- 241000233855 Orchidaceae Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910009043 WC-Co Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910000601 superalloy Inorganic materials 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58171217A JPS6063372A (ja) | 1983-09-19 | 1983-09-19 | 高硬度窒化ホウ素薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58171217A JPS6063372A (ja) | 1983-09-19 | 1983-09-19 | 高硬度窒化ホウ素薄膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6063372A true JPS6063372A (ja) | 1985-04-11 |
| JPH0351787B2 JPH0351787B2 (enrdf_load_stackoverflow) | 1991-08-07 |
Family
ID=15919206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58171217A Granted JPS6063372A (ja) | 1983-09-19 | 1983-09-19 | 高硬度窒化ホウ素薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6063372A (enrdf_load_stackoverflow) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60152677A (ja) * | 1984-01-20 | 1985-08-10 | Sumitomo Electric Ind Ltd | 立方晶窒化硼素被覆硬質体の製造方法 |
| JPS61157674A (ja) * | 1984-12-29 | 1986-07-17 | Agency Of Ind Science & Technol | 高硬度窒化ホウ素膜の製造方法 |
| JPS6293366A (ja) * | 1985-10-18 | 1987-04-28 | Nissin Electric Co Ltd | 窒化ホウ素膜の作製方法 |
| JPS62164869A (ja) * | 1986-01-16 | 1987-07-21 | Nissin Electric Co Ltd | 高硬度被覆材料とその製造方法 |
| JPS6318050A (ja) * | 1986-07-11 | 1988-01-25 | Mitsubishi Heavy Ind Ltd | Ｃｂｎ被覆法 |
| JPS63134662A (ja) * | 1986-11-22 | 1988-06-07 | Sumitomo Electric Ind Ltd | 高硬度窒化硼素の合成法 |
| JPH01225767A (ja) * | 1988-03-07 | 1989-09-08 | Nissin Electric Co Ltd | 窒化ケイ素膜の製造方法 |
| JPH02155531A (ja) * | 1988-12-07 | 1990-06-14 | Agency Of Ind Science & Technol | 鍛造用金型及びその製法 |
| JPH02159362A (ja) * | 1988-12-13 | 1990-06-19 | Mitsubishi Heavy Ind Ltd | 薄膜製造方法および装置 |
| JPH02259059A (ja) * | 1989-03-31 | 1990-10-19 | Mitsubishi Heavy Ind Ltd | 窒化ホウ素の形成方法 |
| JPH04124258A (ja) * | 1990-09-12 | 1992-04-24 | Nissin Electric Co Ltd | 窒化ホウ素薄膜の形成方法 |
| JPH04124259A (ja) * | 1990-09-12 | 1992-04-24 | Nissin Electric Co Ltd | 窒化ホウ素薄膜の形成方法 |
| EP0429993B1 (en) * | 1989-11-17 | 1995-08-02 | Nissin Electric Company, Limited | Method of forming thin film containing boron nitride, magnetic head and method of preparing said magnetic head |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5282699A (en) * | 1975-12-29 | 1977-07-11 | Youichi Murayama | Hard boronnitride c0ating |
-
1983
- 1983-09-19 JP JP58171217A patent/JPS6063372A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5282699A (en) * | 1975-12-29 | 1977-07-11 | Youichi Murayama | Hard boronnitride c0ating |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60152677A (ja) * | 1984-01-20 | 1985-08-10 | Sumitomo Electric Ind Ltd | 立方晶窒化硼素被覆硬質体の製造方法 |
| JPS61157674A (ja) * | 1984-12-29 | 1986-07-17 | Agency Of Ind Science & Technol | 高硬度窒化ホウ素膜の製造方法 |
| JPS6293366A (ja) * | 1985-10-18 | 1987-04-28 | Nissin Electric Co Ltd | 窒化ホウ素膜の作製方法 |
| JPS62164869A (ja) * | 1986-01-16 | 1987-07-21 | Nissin Electric Co Ltd | 高硬度被覆材料とその製造方法 |
| JPS6318050A (ja) * | 1986-07-11 | 1988-01-25 | Mitsubishi Heavy Ind Ltd | Ｃｂｎ被覆法 |
| JPS63134662A (ja) * | 1986-11-22 | 1988-06-07 | Sumitomo Electric Ind Ltd | 高硬度窒化硼素の合成法 |
| JPH01225767A (ja) * | 1988-03-07 | 1989-09-08 | Nissin Electric Co Ltd | 窒化ケイ素膜の製造方法 |
| JPH02155531A (ja) * | 1988-12-07 | 1990-06-14 | Agency Of Ind Science & Technol | 鍛造用金型及びその製法 |
| JPH02159362A (ja) * | 1988-12-13 | 1990-06-19 | Mitsubishi Heavy Ind Ltd | 薄膜製造方法および装置 |
| JPH02259059A (ja) * | 1989-03-31 | 1990-10-19 | Mitsubishi Heavy Ind Ltd | 窒化ホウ素の形成方法 |
| EP0429993B1 (en) * | 1989-11-17 | 1995-08-02 | Nissin Electric Company, Limited | Method of forming thin film containing boron nitride, magnetic head and method of preparing said magnetic head |
| JPH04124258A (ja) * | 1990-09-12 | 1992-04-24 | Nissin Electric Co Ltd | 窒化ホウ素薄膜の形成方法 |
| JPH04124259A (ja) * | 1990-09-12 | 1992-04-24 | Nissin Electric Co Ltd | 窒化ホウ素薄膜の形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0351787B2 (enrdf_load_stackoverflow) | 1991-08-07 |
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