JPS6057931A - 集束イオンビ−ムを用いたイオン注入方法 - Google Patents

集束イオンビ−ムを用いたイオン注入方法

Info

Publication number
JPS6057931A
JPS6057931A JP58165962A JP16596283A JPS6057931A JP S6057931 A JPS6057931 A JP S6057931A JP 58165962 A JP58165962 A JP 58165962A JP 16596283 A JP16596283 A JP 16596283A JP S6057931 A JPS6057931 A JP S6057931A
Authority
JP
Japan
Prior art keywords
film
ion beam
opening
mask
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58165962A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0510821B2 (cg-RX-API-DMAC7.html
Inventor
Susumu Asata
麻多　進
Shinji Matsui
真二 松井
Katsumi Mori
克己 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58165962A priority Critical patent/JPS6057931A/ja
Publication of JPS6057931A publication Critical patent/JPS6057931A/ja
Publication of JPH0510821B2 publication Critical patent/JPH0510821B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
JP58165962A 1983-09-09 1983-09-09 集束イオンビ−ムを用いたイオン注入方法 Granted JPS6057931A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58165962A JPS6057931A (ja) 1983-09-09 1983-09-09 集束イオンビ−ムを用いたイオン注入方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58165962A JPS6057931A (ja) 1983-09-09 1983-09-09 集束イオンビ−ムを用いたイオン注入方法

Publications (2)

Publication Number Publication Date
JPS6057931A true JPS6057931A (ja) 1985-04-03
JPH0510821B2 JPH0510821B2 (cg-RX-API-DMAC7.html) 1993-02-10

Family

ID=15822317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58165962A Granted JPS6057931A (ja) 1983-09-09 1983-09-09 集束イオンビ−ムを用いたイオン注入方法

Country Status (1)

Country Link
JP (1) JPS6057931A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01167136A (ja) * 1987-07-01 1989-06-30 Xerox Corp 静電写真式複写機
JPH02302032A (ja) * 1989-05-16 1990-12-14 Res Dev Corp Of Japan エッチング方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5656637A (en) * 1979-10-13 1981-05-18 Mitsubishi Electric Corp Forming method of fine pattern
JPS5730243A (en) * 1980-07-31 1982-02-18 Rikagaku Kenkyusho Ion beam forming method
JPS58106824A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5656637A (en) * 1979-10-13 1981-05-18 Mitsubishi Electric Corp Forming method of fine pattern
JPS5730243A (en) * 1980-07-31 1982-02-18 Rikagaku Kenkyusho Ion beam forming method
JPS58106824A (ja) * 1981-12-18 1983-06-25 Toshiba Corp フオ−カスイオンビ−ム加工方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01167136A (ja) * 1987-07-01 1989-06-30 Xerox Corp 静電写真式複写機
JPH02302032A (ja) * 1989-05-16 1990-12-14 Res Dev Corp Of Japan エッチング方法

Also Published As

Publication number Publication date
JPH0510821B2 (cg-RX-API-DMAC7.html) 1993-02-10

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