JPS6057233B2 - ホトダイオ−ド検出器及びその製造方法 - Google Patents
ホトダイオ−ド検出器及びその製造方法Info
- Publication number
- JPS6057233B2 JPS6057233B2 JP50106594A JP10659475A JPS6057233B2 JP S6057233 B2 JPS6057233 B2 JP S6057233B2 JP 50106594 A JP50106594 A JP 50106594A JP 10659475 A JP10659475 A JP 10659475A JP S6057233 B2 JPS6057233 B2 JP S6057233B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sections
- section
- substrate
- intermediate layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 90
- 238000010521 absorption reaction Methods 0.000 description 16
- 239000002344 surface layer Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA209,401A CA1003938A (en) | 1974-09-17 | 1974-09-17 | Photodiode detector with selective frequency response |
| CA209401 | 1974-09-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5154387A JPS5154387A (US20100268047A1-20101021-C00003.png) | 1976-05-13 |
| JPS6057233B2 true JPS6057233B2 (ja) | 1985-12-13 |
Family
ID=4101165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50106594A Expired JPS6057233B2 (ja) | 1974-09-17 | 1975-09-04 | ホトダイオ−ド検出器及びその製造方法 |
Country Status (7)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2136202B (en) * | 1983-03-02 | 1987-01-14 | Int Standard Electric Corp | Photodiode |
| JPS61204987A (ja) * | 1985-03-08 | 1986-09-11 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発受光装置 |
| JPS639358A (ja) * | 1986-06-30 | 1988-01-16 | Fuji Xerox Co Ltd | 原稿読取装置 |
| JPH0746721B2 (ja) * | 1986-09-09 | 1995-05-17 | 富士ゼロックス株式会社 | イメ−ジセンサおよびその製造方法 |
| US4757210A (en) * | 1987-03-02 | 1988-07-12 | Rockwell International Corporation | Edge illuminated detector arrays for determination of spectral content |
| GB2228824A (en) * | 1989-03-01 | 1990-09-05 | Gen Electric Co Plc | Radiation detectors |
| KR100560309B1 (ko) * | 2003-12-31 | 2006-03-14 | 동부아남반도체 주식회사 | 씨모스 이미지 센서 및 그 광 칼라 감도 감지 방법 |
-
1974
- 1974-09-17 CA CA209,401A patent/CA1003938A/en not_active Expired
-
1975
- 1975-08-14 GB GB3393775A patent/GB1519466A/en not_active Expired
- 1975-09-04 JP JP50106594A patent/JPS6057233B2/ja not_active Expired
- 1975-09-16 NL NL7510863A patent/NL7510863A/xx not_active Application Discontinuation
- 1975-09-16 DE DE19757529280 patent/DE7529280U/de not_active Expired
- 1975-09-16 DE DE19752541224 patent/DE2541224A1/de active Pending
- 1975-09-17 SE SE7510418A patent/SE7510418L/xx not_active Application Discontinuation
- 1975-09-17 FR FR7528518A patent/FR2285720A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2285720A1 (fr) | 1976-04-16 |
| SE7510418L (sv) | 1976-03-18 |
| NL7510863A (nl) | 1976-03-19 |
| DE7529280U (de) | 1980-01-24 |
| GB1519466A (en) | 1978-07-26 |
| JPS5154387A (US20100268047A1-20101021-C00003.png) | 1976-05-13 |
| DE2541224A1 (de) | 1976-03-25 |
| CA1003938A (en) | 1977-01-18 |
| FR2285720B1 (US20100268047A1-20101021-C00003.png) | 1978-11-03 |
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