JPS6055669A - 不揮発性半導体メモリ素子 - Google Patents

不揮発性半導体メモリ素子

Info

Publication number
JPS6055669A
JPS6055669A JP58163470A JP16347083A JPS6055669A JP S6055669 A JPS6055669 A JP S6055669A JP 58163470 A JP58163470 A JP 58163470A JP 16347083 A JP16347083 A JP 16347083A JP S6055669 A JPS6055669 A JP S6055669A
Authority
JP
Japan
Prior art keywords
silicon
film
nitride film
region
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58163470A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6357945B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Yutaka Hayashi
豊 林
Hidekazu Suzuki
英一 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58163470A priority Critical patent/JPS6055669A/ja
Publication of JPS6055669A publication Critical patent/JPS6055669A/ja
Publication of JPS6357945B2 publication Critical patent/JPS6357945B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Non-Volatile Memory (AREA)
JP58163470A 1983-09-06 1983-09-06 不揮発性半導体メモリ素子 Granted JPS6055669A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58163470A JPS6055669A (ja) 1983-09-06 1983-09-06 不揮発性半導体メモリ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58163470A JPS6055669A (ja) 1983-09-06 1983-09-06 不揮発性半導体メモリ素子

Publications (2)

Publication Number Publication Date
JPS6055669A true JPS6055669A (ja) 1985-03-30
JPS6357945B2 JPS6357945B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-11-14

Family

ID=15774480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58163470A Granted JPS6055669A (ja) 1983-09-06 1983-09-06 不揮発性半導体メモリ素子

Country Status (1)

Country Link
JP (1) JPS6055669A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0544354A (ja) * 1991-08-12 1993-02-23 Ichisaburo Saito 多層床面よりなる駐車場における昇降用路面
JPH05340120A (ja) * 1992-06-04 1993-12-21 Oi Kenko Kk 連続傾床型自走式立体駐車場
JP2000200842A (ja) * 1998-11-04 2000-07-18 Sony Corp 不揮発性半導体記憶装置、製造方法および書き込み方法
JP2001237330A (ja) * 1999-12-17 2001-08-31 Sony Corp 不揮発性半導体記憶装置およびその動作方法
JP2002289708A (ja) * 2001-03-28 2002-10-04 Sony Corp 不揮発性半導体記憶装置およびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0544354A (ja) * 1991-08-12 1993-02-23 Ichisaburo Saito 多層床面よりなる駐車場における昇降用路面
JPH05340120A (ja) * 1992-06-04 1993-12-21 Oi Kenko Kk 連続傾床型自走式立体駐車場
JP2000200842A (ja) * 1998-11-04 2000-07-18 Sony Corp 不揮発性半導体記憶装置、製造方法および書き込み方法
JP2001237330A (ja) * 1999-12-17 2001-08-31 Sony Corp 不揮発性半導体記憶装置およびその動作方法
JP2002289708A (ja) * 2001-03-28 2002-10-04 Sony Corp 不揮発性半導体記憶装置およびその製造方法

Also Published As

Publication number Publication date
JPS6357945B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-11-14

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