JPS6055663A - サイリスタ - Google Patents

サイリスタ

Info

Publication number
JPS6055663A
JPS6055663A JP59156473A JP15647384A JPS6055663A JP S6055663 A JPS6055663 A JP S6055663A JP 59156473 A JP59156473 A JP 59156473A JP 15647384 A JP15647384 A JP 15647384A JP S6055663 A JPS6055663 A JP S6055663A
Authority
JP
Japan
Prior art keywords
emitter
region
thyristor
type
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59156473A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0325028B2 (enExample
Inventor
ヘルムート、ヘルベルク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of JPS6055663A publication Critical patent/JPS6055663A/ja
Publication of JPH0325028B2 publication Critical patent/JPH0325028B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126Top-view geometrical layouts of the regions or the junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148Cathode regions of thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131Thyristors having built-in components
    • H10D84/138Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
JP59156473A 1983-08-19 1984-07-26 サイリスタ Granted JPS6055663A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3330022.4 1983-08-19
DE19833330022 DE3330022A1 (de) 1983-08-19 1983-08-19 Thyristor

Publications (2)

Publication Number Publication Date
JPS6055663A true JPS6055663A (ja) 1985-03-30
JPH0325028B2 JPH0325028B2 (enExample) 1991-04-04

Family

ID=6206989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59156473A Granted JPS6055663A (ja) 1983-08-19 1984-07-26 サイリスタ

Country Status (4)

Country Link
US (1) US4758871A (enExample)
EP (1) EP0137951B1 (enExample)
JP (1) JPS6055663A (enExample)
DE (2) DE3330022A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2513462B2 (ja) * 1986-03-26 1996-07-03 株式会社日立製作所 マイクロ・コンピユ−タ
EP0331892B1 (de) * 1988-03-10 1992-04-01 Asea Brown Boveri Ag Mos-gesteuerter Thyristor (MCT)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194575A (en) * 1981-05-08 1982-11-30 Siemens Ag Thyristor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS6043668B2 (ja) * 1979-07-06 1985-09-30 株式会社日立製作所 半導体装置
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
DE3018468A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb
DE3118293A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb
DE3118354A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und kurzschlussgebieten sowie verfahren zu seinem betrieb
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device
US4639762A (en) * 1984-04-30 1987-01-27 Rca Corporation MOSFET with reduced bipolar effects

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194575A (en) * 1981-05-08 1982-11-30 Siemens Ag Thyristor

Also Published As

Publication number Publication date
DE3330022A1 (de) 1985-02-28
US4758871A (en) 1988-07-19
EP0137951B1 (de) 1987-11-25
DE3467835D1 (en) 1988-01-07
EP0137951A1 (de) 1985-04-24
JPH0325028B2 (enExample) 1991-04-04

Similar Documents

Publication Publication Date Title
US6323509B1 (en) Power semiconductor device including a free wheeling diode and method of manufacturing for same
JP2760734B2 (ja) 縦方向導電性高出力mosfet
JPS609669B2 (ja) サイリスタ
JP2000200906A5 (enExample)
JPH03270273A (ja) 半導体装置およびその製造方法
US4454527A (en) Thyristor having controllable emitter short circuits and a method for its operation
US5099300A (en) Gated base controlled thyristor
EP0111166B1 (en) Gate turn-off thyristor
US4612449A (en) Thyristor having a secondary emitter electrode and a method for operating the same
KR0155991B1 (ko) 절연 게이트 트랜지스터용 mos 파일럿 구조체
JPS609668B2 (ja) サイリスタ
JPS6055663A (ja) サイリスタ
US4737834A (en) Thyristor with controllable emitter short-circuit paths inserted in the emitter
US7683454B2 (en) MOS power component with a reduced surface area
US4163241A (en) Multiple emitter and normal gate semiconductor switch
US5614737A (en) MOS-controlled high-power thyristor
JPS6248392B2 (enExample)
JPS6337507B2 (enExample)
US3566210A (en) Semiconductor switching device having a shorted emitter
JPS6380569A (ja) 伝導度変調型横型mos−fet
JP3301271B2 (ja) 横型パワーmosfet
JPS6276557A (ja) 絶縁ゲ−ト型自己タ−ンオフ素子
JPH02285677A (ja) ゲートターンオフサイリスタ
JPH0327534A (ja) 接合型電界効果トランジスタ
JP2515017B2 (ja) サイリスタ