JPS6055663A - サイリスタ - Google Patents
サイリスタInfo
- Publication number
- JPS6055663A JPS6055663A JP59156473A JP15647384A JPS6055663A JP S6055663 A JPS6055663 A JP S6055663A JP 59156473 A JP59156473 A JP 59156473A JP 15647384 A JP15647384 A JP 15647384A JP S6055663 A JPS6055663 A JP S6055663A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- region
- thyristor
- type
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/148—Cathode regions of thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/138—Thyristors having built-in components the built-in components being FETs
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3330022.4 | 1983-08-19 | ||
| DE19833330022 DE3330022A1 (de) | 1983-08-19 | 1983-08-19 | Thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6055663A true JPS6055663A (ja) | 1985-03-30 |
| JPH0325028B2 JPH0325028B2 (enExample) | 1991-04-04 |
Family
ID=6206989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59156473A Granted JPS6055663A (ja) | 1983-08-19 | 1984-07-26 | サイリスタ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4758871A (enExample) |
| EP (1) | EP0137951B1 (enExample) |
| JP (1) | JPS6055663A (enExample) |
| DE (2) | DE3330022A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2513462B2 (ja) * | 1986-03-26 | 1996-07-03 | 株式会社日立製作所 | マイクロ・コンピユ−タ |
| EP0331892B1 (de) * | 1988-03-10 | 1992-04-01 | Asea Brown Boveri Ag | Mos-gesteuerter Thyristor (MCT) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57194575A (en) * | 1981-05-08 | 1982-11-30 | Siemens Ag | Thyristor |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
| JPS6043668B2 (ja) * | 1979-07-06 | 1985-09-30 | 株式会社日立製作所 | 半導体装置 |
| DE2945366A1 (de) * | 1979-11-09 | 1981-05-14 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitter-kurzschluessen |
| DE3018468A1 (de) * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb |
| DE3118293A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb |
| DE3118354A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitterkurzschluessen und kurzschlussgebieten sowie verfahren zu seinem betrieb |
| JPS57201077A (en) * | 1981-06-05 | 1982-12-09 | Hitachi Ltd | Semiconductor switching device |
| US4639762A (en) * | 1984-04-30 | 1987-01-27 | Rca Corporation | MOSFET with reduced bipolar effects |
-
1983
- 1983-08-19 DE DE19833330022 patent/DE3330022A1/de not_active Withdrawn
-
1984
- 1984-07-26 JP JP59156473A patent/JPS6055663A/ja active Granted
- 1984-08-13 EP EP84109645A patent/EP0137951B1/de not_active Expired
- 1984-08-13 DE DE8484109645T patent/DE3467835D1/de not_active Expired
-
1987
- 1987-10-02 US US07/104,577 patent/US4758871A/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57194575A (en) * | 1981-05-08 | 1982-11-30 | Siemens Ag | Thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3330022A1 (de) | 1985-02-28 |
| US4758871A (en) | 1988-07-19 |
| EP0137951B1 (de) | 1987-11-25 |
| DE3467835D1 (en) | 1988-01-07 |
| EP0137951A1 (de) | 1985-04-24 |
| JPH0325028B2 (enExample) | 1991-04-04 |
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