JPH0325028B2 - - Google Patents

Info

Publication number
JPH0325028B2
JPH0325028B2 JP59156473A JP15647384A JPH0325028B2 JP H0325028 B2 JPH0325028 B2 JP H0325028B2 JP 59156473 A JP59156473 A JP 59156473A JP 15647384 A JP15647384 A JP 15647384A JP H0325028 B2 JPH0325028 B2 JP H0325028B2
Authority
JP
Japan
Prior art keywords
type
emitter
region
thyristor
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59156473A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6055663A (ja
Inventor
Heruberuku Herumuuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS6055663A publication Critical patent/JPS6055663A/ja
Publication of JPH0325028B2 publication Critical patent/JPH0325028B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
JP59156473A 1983-08-19 1984-07-26 サイリスタ Granted JPS6055663A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3330022.4 1983-08-19
DE19833330022 DE3330022A1 (de) 1983-08-19 1983-08-19 Thyristor

Publications (2)

Publication Number Publication Date
JPS6055663A JPS6055663A (ja) 1985-03-30
JPH0325028B2 true JPH0325028B2 (enExample) 1991-04-04

Family

ID=6206989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59156473A Granted JPS6055663A (ja) 1983-08-19 1984-07-26 サイリスタ

Country Status (4)

Country Link
US (1) US4758871A (enExample)
EP (1) EP0137951B1 (enExample)
JP (1) JPS6055663A (enExample)
DE (2) DE3330022A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2513462B2 (ja) * 1986-03-26 1996-07-03 株式会社日立製作所 マイクロ・コンピユ−タ
EP0331892B1 (de) * 1988-03-10 1992-04-01 Asea Brown Boveri Ag Mos-gesteuerter Thyristor (MCT)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS6043668B2 (ja) * 1979-07-06 1985-09-30 株式会社日立製作所 半導体装置
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
DE3018468A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb
DE3118293A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb
DE3118305A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten sowie verfahren zu seinem betrieb
DE3118354A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und kurzschlussgebieten sowie verfahren zu seinem betrieb
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device
US4639762A (en) * 1984-04-30 1987-01-27 Rca Corporation MOSFET with reduced bipolar effects

Also Published As

Publication number Publication date
JPS6055663A (ja) 1985-03-30
DE3330022A1 (de) 1985-02-28
US4758871A (en) 1988-07-19
EP0137951B1 (de) 1987-11-25
DE3467835D1 (en) 1988-01-07
EP0137951A1 (de) 1985-04-24

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