DE3330022A1 - Thyristor - Google Patents

Thyristor

Info

Publication number
DE3330022A1
DE3330022A1 DE19833330022 DE3330022A DE3330022A1 DE 3330022 A1 DE3330022 A1 DE 3330022A1 DE 19833330022 DE19833330022 DE 19833330022 DE 3330022 A DE3330022 A DE 3330022A DE 3330022 A1 DE3330022 A1 DE 3330022A1
Authority
DE
Germany
Prior art keywords
emitter
base
zones
thyristor
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19833330022
Other languages
German (de)
English (en)
Inventor
Helmut Dipl.-Phys. Dr. 8000 München Herberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to DE19833330022 priority Critical patent/DE3330022A1/de
Priority to JP59156473A priority patent/JPS6055663A/ja
Priority to DE8484109645T priority patent/DE3467835D1/de
Priority to EP84109645A priority patent/EP0137951B1/de
Publication of DE3330022A1 publication Critical patent/DE3330022A1/de
Priority to US07/104,577 priority patent/US4758871A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
DE19833330022 1983-08-19 1983-08-19 Thyristor Withdrawn DE3330022A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19833330022 DE3330022A1 (de) 1983-08-19 1983-08-19 Thyristor
JP59156473A JPS6055663A (ja) 1983-08-19 1984-07-26 サイリスタ
DE8484109645T DE3467835D1 (en) 1983-08-19 1984-08-13 Thyristor with mis-controlled emitter short circuits
EP84109645A EP0137951B1 (de) 1983-08-19 1984-08-13 Thyristor mit MIS-gesteuerten Emitterkurzschlüssen
US07/104,577 US4758871A (en) 1983-08-19 1987-10-02 Thyristor with multiple groups of insulated control electrodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19833330022 DE3330022A1 (de) 1983-08-19 1983-08-19 Thyristor

Publications (1)

Publication Number Publication Date
DE3330022A1 true DE3330022A1 (de) 1985-02-28

Family

ID=6206989

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19833330022 Withdrawn DE3330022A1 (de) 1983-08-19 1983-08-19 Thyristor
DE8484109645T Expired DE3467835D1 (en) 1983-08-19 1984-08-13 Thyristor with mis-controlled emitter short circuits

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE8484109645T Expired DE3467835D1 (en) 1983-08-19 1984-08-13 Thyristor with mis-controlled emitter short circuits

Country Status (4)

Country Link
US (1) US4758871A (enExample)
EP (1) EP0137951B1 (enExample)
JP (1) JPS6055663A (enExample)
DE (2) DE3330022A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954869A (en) * 1988-03-10 1990-09-04 Asea Brown Boveri Ltd. MOS-controlled thyristor (MCT)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2513462B2 (ja) * 1986-03-26 1996-07-03 株式会社日立製作所 マイクロ・コンピユ−タ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS6043668B2 (ja) * 1979-07-06 1985-09-30 株式会社日立製作所 半導体装置
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
DE3018468A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb
DE3118293A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb
DE3118305A1 (de) * 1981-05-08 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten sowie verfahren zu seinem betrieb
DE3118354A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und kurzschlussgebieten sowie verfahren zu seinem betrieb
JPS57201077A (en) * 1981-06-05 1982-12-09 Hitachi Ltd Semiconductor switching device
US4639762A (en) * 1984-04-30 1987-01-27 Rca Corporation MOSFET with reduced bipolar effects

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954869A (en) * 1988-03-10 1990-09-04 Asea Brown Boveri Ltd. MOS-controlled thyristor (MCT)

Also Published As

Publication number Publication date
JPS6055663A (ja) 1985-03-30
US4758871A (en) 1988-07-19
EP0137951B1 (de) 1987-11-25
DE3467835D1 (en) 1988-01-07
EP0137951A1 (de) 1985-04-24
JPH0325028B2 (enExample) 1991-04-04

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Legal Events

Date Code Title Description
8130 Withdrawal