JPS605539A - プラズマ処理方法 - Google Patents

プラズマ処理方法

Info

Publication number
JPS605539A
JPS605539A JP11321983A JP11321983A JPS605539A JP S605539 A JPS605539 A JP S605539A JP 11321983 A JP11321983 A JP 11321983A JP 11321983 A JP11321983 A JP 11321983A JP S605539 A JPS605539 A JP S605539A
Authority
JP
Japan
Prior art keywords
specimen
negative
sample
voltage
turned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11321983A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6325706B2 (cs
Inventor
Naomichi Abe
阿部　直道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11321983A priority Critical patent/JPS605539A/ja
Publication of JPS605539A publication Critical patent/JPS605539A/ja
Publication of JPS6325706B2 publication Critical patent/JPS6325706B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP11321983A 1983-06-23 1983-06-23 プラズマ処理方法 Granted JPS605539A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11321983A JPS605539A (ja) 1983-06-23 1983-06-23 プラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11321983A JPS605539A (ja) 1983-06-23 1983-06-23 プラズマ処理方法

Publications (2)

Publication Number Publication Date
JPS605539A true JPS605539A (ja) 1985-01-12
JPS6325706B2 JPS6325706B2 (cs) 1988-05-26

Family

ID=14606589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11321983A Granted JPS605539A (ja) 1983-06-23 1983-06-23 プラズマ処理方法

Country Status (1)

Country Link
JP (1) JPS605539A (cs)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62287950A (ja) * 1986-06-04 1987-12-14 Canon Inc 静電吸着装置
JPS63162544A (ja) * 1986-12-25 1988-07-06 Taiheiyo Kinzoku Kk 耐熱性、耐アルカリ性、低ｐＨ性に優れた無機質繊維の製造方法
JPH01181544A (ja) * 1988-01-12 1989-07-19 Sumitomo Metal Ind Ltd 静電チャック
JPH027520A (ja) * 1988-06-27 1990-01-11 Fujitsu Ltd ドライエッチング方法及び装置
US5665167A (en) * 1993-02-16 1997-09-09 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus having a workpiece-side electrode grounding circuit
WO2018173095A1 (ja) * 2017-03-21 2018-09-27 株式会社日立ハイテクノロジーズ プラズマ処理装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0256242U (cs) * 1988-10-19 1990-04-24

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5227266A (en) * 1975-08-25 1977-03-01 Hitachi Ltd Wafer support

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5227266A (en) * 1975-08-25 1977-03-01 Hitachi Ltd Wafer support

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62287950A (ja) * 1986-06-04 1987-12-14 Canon Inc 静電吸着装置
JPS63162544A (ja) * 1986-12-25 1988-07-06 Taiheiyo Kinzoku Kk 耐熱性、耐アルカリ性、低ｐＨ性に優れた無機質繊維の製造方法
JPH01181544A (ja) * 1988-01-12 1989-07-19 Sumitomo Metal Ind Ltd 静電チャック
JPH027520A (ja) * 1988-06-27 1990-01-11 Fujitsu Ltd ドライエッチング方法及び装置
US5665167A (en) * 1993-02-16 1997-09-09 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus having a workpiece-side electrode grounding circuit
WO2018173095A1 (ja) * 2017-03-21 2018-09-27 株式会社日立ハイテクノロジーズ プラズマ処理装置
JPWO2018173095A1 (ja) * 2017-03-21 2019-04-04 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10825657B2 (en) 2017-03-21 2020-11-03 Hitachi High-Tech Corporation Plasma processing apparatus

Also Published As

Publication number Publication date
JPS6325706B2 (cs) 1988-05-26

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