JPWO2018173095A1 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JPWO2018173095A1 JPWO2018173095A1 JP2018511164A JP2018511164A JPWO2018173095A1 JP WO2018173095 A1 JPWO2018173095 A1 JP WO2018173095A1 JP 2018511164 A JP2018511164 A JP 2018511164A JP 2018511164 A JP2018511164 A JP 2018511164A JP WO2018173095 A1 JPWO2018173095 A1 JP WO2018173095A1
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- plasma
- sample
- processing apparatus
- frequency
- plasma processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (5)
- 真空容器内部に配置されその内側でプラズマが形成される処理室と、この処理室内に配置され前記プラズマを用いて処理される試料がその上に載せられる試料台と、この試料台上面を構成してその上に前記試料が載せられる誘電体製の膜内に配置され当該試料を吸着するための電力が供給されて異なる極性が形成される膜状の2つの電極と、当該2つの電極と各々の電源との間の給電路上に配置され前記2つの電極各々に接続された2つの給電線路が同じ軸回りに並列に巻かれたコイル状部分と、このコイル状部分と前記2つ電極との間において前記2つの給電線路を接続しコンデンサを備えたバイパス線路とを備えたプラズマ処理装置。
- 請求項1記載のプラズマ処理装置であって、
前記処理室内に前記プラズマを形成する電界を形成する高周波電力を供給する高周波電源を有し、前記高周波電力の周波数が30乃至300MHzの範囲内であるプラズマ処理装置。 - 請求項1または2に記載のプラズマ処理装置であって、
前記コイル状部分が内部に芯を有さないプラズマ処理装置。 - 請求項1乃至3の何れか一項に記載のプラズマ処理装置であって、
前記コイル状部分が前記2つの給電線路上であって当該線路の前記2つ電極からの距離が前記高周波電力の1波長以内に配置されたプラズマ処理装置。 - 請求項1乃至4の何れか一項に記載のプラズマ処理装置であって、
前記2つの給電線路上の前記コイル状部分と前記各々の電源との間に配置され前記高周波電力を濾過するフィルタを備えたプラズマ処理装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/011093 WO2018173095A1 (ja) | 2017-03-21 | 2017-03-21 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018173095A1 true JPWO2018173095A1 (ja) | 2019-04-04 |
JP6530859B2 JP6530859B2 (ja) | 2019-06-12 |
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JP2018511164A Active JP6530859B2 (ja) | 2017-03-21 | 2017-03-21 | プラズマ処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10825657B2 (ja) |
JP (1) | JP6530859B2 (ja) |
KR (1) | KR102056724B1 (ja) |
TW (1) | TWI701706B (ja) |
WO (1) | WO2018173095A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111199860A (zh) * | 2018-11-20 | 2020-05-26 | 江苏鲁汶仪器有限公司 | 一种刻蚀均匀性调节装置及方法 |
KR102593142B1 (ko) * | 2020-05-19 | 2023-10-25 | 세메스 주식회사 | 기판 처리 장치 및 그의 페라이트 코어 온도 제어 방법 |
KR20220061617A (ko) | 2020-11-06 | 2022-05-13 | 세메스 주식회사 | 기판 처리 장치 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS605539A (ja) * | 1983-06-23 | 1985-01-12 | Fujitsu Ltd | プラズマ処理方法 |
JPH03179735A (ja) * | 1989-12-07 | 1991-08-05 | Tokyo Electron Ltd | プラズマ処理装置 |
JPH06326176A (ja) * | 1993-05-12 | 1994-11-25 | Tokyo Electron Ltd | 自己バイアス測定方法及び装置並びに静電吸着装置 |
US5557215A (en) * | 1993-05-12 | 1996-09-17 | Tokyo Electron Limited | Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus |
JP2016031955A (ja) * | 2014-07-28 | 2016-03-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
JP2016131235A (ja) * | 2015-01-09 | 2016-07-21 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6027374B2 (ja) | 2012-09-12 | 2016-11-16 | 東京エレクトロン株式会社 | プラズマ処理装置及びフィルタユニット |
US9779919B2 (en) * | 2015-01-09 | 2017-10-03 | Hitachi High-Technologies Corporation | Plasma processing apparatus and plasma processing method |
JP6650593B2 (ja) * | 2017-02-17 | 2020-02-19 | パナソニックIpマネジメント株式会社 | プラズマ処理装置およびプラズマ処理方法 |
-
2017
- 2017-03-21 WO PCT/JP2017/011093 patent/WO2018173095A1/ja active Application Filing
- 2017-03-21 JP JP2018511164A patent/JP6530859B2/ja active Active
- 2017-03-21 KR KR1020187003988A patent/KR102056724B1/ko active IP Right Grant
- 2017-03-21 US US15/755,338 patent/US10825657B2/en active Active
-
2018
- 2018-02-26 TW TW107106355A patent/TWI701706B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS605539A (ja) * | 1983-06-23 | 1985-01-12 | Fujitsu Ltd | プラズマ処理方法 |
JPH03179735A (ja) * | 1989-12-07 | 1991-08-05 | Tokyo Electron Ltd | プラズマ処理装置 |
JPH06326176A (ja) * | 1993-05-12 | 1994-11-25 | Tokyo Electron Ltd | 自己バイアス測定方法及び装置並びに静電吸着装置 |
US5557215A (en) * | 1993-05-12 | 1996-09-17 | Tokyo Electron Limited | Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus |
JP2016031955A (ja) * | 2014-07-28 | 2016-03-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
JP2016131235A (ja) * | 2015-01-09 | 2016-07-21 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
Also Published As
Publication number | Publication date |
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KR102056724B1 (ko) | 2019-12-17 |
JP6530859B2 (ja) | 2019-06-12 |
US20200234924A1 (en) | 2020-07-23 |
TWI701706B (zh) | 2020-08-11 |
WO2018173095A1 (ja) | 2018-09-27 |
TW201843695A (zh) | 2018-12-16 |
US10825657B2 (en) | 2020-11-03 |
KR20180125432A (ko) | 2018-11-23 |
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