JPS6054996A - ダイヤモンドの合成法 - Google Patents
ダイヤモンドの合成法Info
- Publication number
- JPS6054996A JPS6054996A JP58164766A JP16476683A JPS6054996A JP S6054996 A JPS6054996 A JP S6054996A JP 58164766 A JP58164766 A JP 58164766A JP 16476683 A JP16476683 A JP 16476683A JP S6054996 A JPS6054996 A JP S6054996A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- diamond
- plasma
- microwave
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010432 diamond Substances 0.000 title claims description 32
- 229910003460 diamond Inorganic materials 0.000 title claims description 30
- 238000001308 synthesis method Methods 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims description 36
- 239000007789 gas Substances 0.000 claims description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 229930195733 hydrocarbon Natural products 0.000 claims description 15
- 150000002430 hydrocarbons Chemical class 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 14
- 239000004215 Carbon black (E152) Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000003786 synthesis reaction Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 230000002194 synthesizing effect Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 239000011358 absorbing material Substances 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 13
- 229910052799 carbon Inorganic materials 0.000 description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- 238000001556 precipitation Methods 0.000 description 6
- 239000010439 graphite Substances 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- WCVOGSZTONGSQY-UHFFFAOYSA-N 2,4,6-trichloroanisole Chemical compound COC1=C(Cl)C=C(Cl)C=C1Cl WCVOGSZTONGSQY-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58164766A JPS6054996A (ja) | 1983-09-07 | 1983-09-07 | ダイヤモンドの合成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58164766A JPS6054996A (ja) | 1983-09-07 | 1983-09-07 | ダイヤモンドの合成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6054996A true JPS6054996A (ja) | 1985-03-29 |
| JPS62120B2 JPS62120B2 (enrdf_load_stackoverflow) | 1987-01-06 |
Family
ID=15799517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58164766A Granted JPS6054996A (ja) | 1983-09-07 | 1983-09-07 | ダイヤモンドの合成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6054996A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62198277U (enrdf_load_stackoverflow) * | 1986-06-09 | 1987-12-17 | ||
| US4940015A (en) * | 1988-07-30 | 1990-07-10 | Kabushiki Kaisha Kobe Seiko Sho | Plasma reactor for diamond synthesis |
| US4984534A (en) * | 1987-04-22 | 1991-01-15 | Idemitsu Petrochemical Co., Ltd. | Method for synthesis of diamond |
| WO1992005867A1 (fr) * | 1990-10-01 | 1992-04-16 | Idemitsu Petrochemical Company Limited | Appareil de production de plasma par micro-ondes et procede de production de film diamante utilisant cet appareil |
| US5271971A (en) * | 1987-03-30 | 1993-12-21 | Crystallume | Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material |
| EP0839928A1 (de) * | 1996-10-30 | 1998-05-06 | Schott Glaswerke | Remote-Plasma-CVD-Verfahren |
| KR100459531B1 (ko) * | 2001-12-27 | 2004-12-04 | 박수길 | 마이크로웨이브 플라즈마 씨브이디에 의한 대결정다이아몬드 박막의 제조방법 |
-
1983
- 1983-09-07 JP JP58164766A patent/JPS6054996A/ja active Granted
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62198277U (enrdf_load_stackoverflow) * | 1986-06-09 | 1987-12-17 | ||
| US5271971A (en) * | 1987-03-30 | 1993-12-21 | Crystallume | Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material |
| US4984534A (en) * | 1987-04-22 | 1991-01-15 | Idemitsu Petrochemical Co., Ltd. | Method for synthesis of diamond |
| US4940015A (en) * | 1988-07-30 | 1990-07-10 | Kabushiki Kaisha Kobe Seiko Sho | Plasma reactor for diamond synthesis |
| WO1992005867A1 (fr) * | 1990-10-01 | 1992-04-16 | Idemitsu Petrochemical Company Limited | Appareil de production de plasma par micro-ondes et procede de production de film diamante utilisant cet appareil |
| EP0839928A1 (de) * | 1996-10-30 | 1998-05-06 | Schott Glaswerke | Remote-Plasma-CVD-Verfahren |
| US5985378A (en) * | 1996-10-30 | 1999-11-16 | Schott Glaswerke | Remote-plasma-CVD method for coating or for treating large-surface substrates and apparatus for performing same |
| KR100459531B1 (ko) * | 2001-12-27 | 2004-12-04 | 박수길 | 마이크로웨이브 플라즈마 씨브이디에 의한 대결정다이아몬드 박막의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62120B2 (enrdf_load_stackoverflow) | 1987-01-06 |
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