JPS6050976A - 非晶質シリコン薄膜太陽電池 - Google Patents

非晶質シリコン薄膜太陽電池

Info

Publication number
JPS6050976A
JPS6050976A JP58159673A JP15967383A JPS6050976A JP S6050976 A JPS6050976 A JP S6050976A JP 58159673 A JP58159673 A JP 58159673A JP 15967383 A JP15967383 A JP 15967383A JP S6050976 A JPS6050976 A JP S6050976A
Authority
JP
Japan
Prior art keywords
gas
substrate
thin film
amorphous silicon
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58159673A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518270B2 (enrdf_load_stackoverflow
Inventor
Setsu Akiyama
秋山　節
Hiroshi Imagawa
今川　容
Masayoshi Koba
木場　正義
Atsushi Kudo
淳 工藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Toyobo Co Ltd
Original Assignee
Sharp Corp
Toyobo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp, Toyobo Co Ltd filed Critical Sharp Corp
Priority to JP58159673A priority Critical patent/JPS6050976A/ja
Publication of JPS6050976A publication Critical patent/JPS6050976A/ja
Publication of JPH0518270B2 publication Critical patent/JPH0518270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP58159673A 1983-08-30 1983-08-30 非晶質シリコン薄膜太陽電池 Granted JPS6050976A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58159673A JPS6050976A (ja) 1983-08-30 1983-08-30 非晶質シリコン薄膜太陽電池

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58159673A JPS6050976A (ja) 1983-08-30 1983-08-30 非晶質シリコン薄膜太陽電池

Publications (2)

Publication Number Publication Date
JPS6050976A true JPS6050976A (ja) 1985-03-22
JPH0518270B2 JPH0518270B2 (enrdf_load_stackoverflow) 1993-03-11

Family

ID=15698828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58159673A Granted JPS6050976A (ja) 1983-08-30 1983-08-30 非晶質シリコン薄膜太陽電池

Country Status (1)

Country Link
JP (1) JPS6050976A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5254391A (en) * 1975-10-29 1977-05-02 Yuuji Yamaguchi Fibrous photocell

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5254391A (en) * 1975-10-29 1977-05-02 Yuuji Yamaguchi Fibrous photocell

Also Published As

Publication number Publication date
JPH0518270B2 (enrdf_load_stackoverflow) 1993-03-11

Similar Documents

Publication Publication Date Title
US4499331A (en) Amorphous semiconductor and amorphous silicon photovoltaic device
US6288324B1 (en) Solar cell module and method for manufacturing same
US6121541A (en) Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
US5230746A (en) Photovoltaic device having enhanced rear reflecting contact
Schropp et al. Amorphous silicon, microcrystalline silicon, and thin-film polycrystalline silicon solar cells
JPH06204526A (ja) 光起電力素子
US5419783A (en) Photovoltaic device and manufacturing method therefor
CA1187622A (en) Semiconductor device having a body of amorphous silicon
JP3684041B2 (ja) 光起電力素子
US4922218A (en) Photovoltaic device
US5085711A (en) Photovoltaic device
Sai et al. Key Points in the Latest Developments of High‐Efficiency Thin‐Film Silicon Solar Cells
WO2009017373A2 (en) Solar cell and method for the same
JP2004265889A (ja) 光電変換素子、光電変換装置、及び鉄シリサイド膜
JPS6050976A (ja) 非晶質シリコン薄膜太陽電池
JPH0518271B2 (enrdf_load_stackoverflow)
JPH059947B2 (enrdf_load_stackoverflow)
JPH059946B2 (enrdf_load_stackoverflow)
JP2854083B2 (ja) 半導体薄膜およびその製造方法
JPH081959B2 (ja) 太陽電池
JP2004056024A (ja) 薄膜太陽電池およびその製造方法
JPH0456170A (ja) 薄膜太陽電池の製造方法
JPS6079779A (ja) 非晶質薄膜を有する太陽電池
JPH0550150B2 (enrdf_load_stackoverflow)
JPS59154081A (ja) 太陽電池