JPH059946B2 - - Google Patents
Info
- Publication number
- JPH059946B2 JPH059946B2 JP57229995A JP22999582A JPH059946B2 JP H059946 B2 JPH059946 B2 JP H059946B2 JP 57229995 A JP57229995 A JP 57229995A JP 22999582 A JP22999582 A JP 22999582A JP H059946 B2 JPH059946 B2 JP H059946B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- solar cell
- amorphous silicon
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57229995A JPS59119877A (ja) | 1982-12-27 | 1982-12-27 | 太陽電池 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57229995A JPS59119877A (ja) | 1982-12-27 | 1982-12-27 | 太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59119877A JPS59119877A (ja) | 1984-07-11 |
JPH059946B2 true JPH059946B2 (enrdf_load_stackoverflow) | 1993-02-08 |
Family
ID=16900950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57229995A Granted JPS59119877A (ja) | 1982-12-27 | 1982-12-27 | 太陽電池 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59119877A (enrdf_load_stackoverflow) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4695850B2 (ja) * | 2004-04-28 | 2011-06-08 | 本田技研工業株式会社 | カルコパイライト型太陽電池 |
JP4663300B2 (ja) * | 2004-11-18 | 2011-04-06 | 本田技研工業株式会社 | カルコパイライト型薄膜太陽電池の製造方法 |
JP4969785B2 (ja) * | 2005-02-16 | 2012-07-04 | 本田技研工業株式会社 | カルコパイライト型太陽電池及びその製造方法 |
JP4681352B2 (ja) * | 2005-05-24 | 2011-05-11 | 本田技研工業株式会社 | カルコパイライト型太陽電池 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS596074B2 (ja) * | 1981-10-08 | 1984-02-08 | 太陽誘電株式会社 | 非晶質シリコン太陽電池 |
-
1982
- 1982-12-27 JP JP57229995A patent/JPS59119877A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59119877A (ja) | 1984-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101389546B1 (ko) | 표면 패시베이션이 향상된 결정성 실리콘 태양 전지의 제조 방법 | |
CA1090454A (en) | Devices including a layer of amorphous silicon | |
US4162505A (en) | Inverted amorphous silicon solar cell utilizing cermet layers | |
JP2012502450A (ja) | へテロ太陽電池およびヘテロ太陽電池の製造方法 | |
JPS6228598B2 (enrdf_load_stackoverflow) | ||
Karunagaran et al. | Effect of rapid thermal annealing on the properties of PECVD SiNx thin films | |
US4339470A (en) | Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer | |
JPH059946B2 (enrdf_load_stackoverflow) | ||
US8652871B2 (en) | Method for depositing an amorphous silicon film for photovoltaic devices with reduced light-induced degradation for improved stabilized performance | |
KR100844505B1 (ko) | 질화-산화알루미늄 박막 내의 음성 고정전하를 이용한 박판실리콘 태양전지의 제조방법 | |
JPH059947B2 (enrdf_load_stackoverflow) | ||
JP3609147B2 (ja) | 光電変換装置 | |
JP2838141B2 (ja) | 太陽電池 | |
JPH0518269B2 (enrdf_load_stackoverflow) | ||
JPH0518271B2 (enrdf_load_stackoverflow) | ||
US4508932A (en) | Silicon-based solar energy conversion cells | |
Das et al. | Interface hydrogen and passivation of amorphous silicon/crystalline silicon heterojunction | |
JPH0518270B2 (enrdf_load_stackoverflow) | ||
JPS6158989B2 (enrdf_load_stackoverflow) | ||
JPH03160763A (ja) | 光起電力装置の製造方法 | |
JPS5988874A (ja) | 非晶質半導体薄膜太陽電池 | |
JPS58176977A (ja) | 可撓性薄膜光起電力装置 | |
US5258207A (en) | Amorphous silicon film, its production and photo semiconductor device utilizing such a film | |
JPH0139229B2 (enrdf_load_stackoverflow) | ||
JPH0550151B2 (enrdf_load_stackoverflow) |