JPH0550151B2 - - Google Patents

Info

Publication number
JPH0550151B2
JPH0550151B2 JP58187309A JP18730983A JPH0550151B2 JP H0550151 B2 JPH0550151 B2 JP H0550151B2 JP 58187309 A JP58187309 A JP 58187309A JP 18730983 A JP18730983 A JP 18730983A JP H0550151 B2 JPH0550151 B2 JP H0550151B2
Authority
JP
Japan
Prior art keywords
thin film
film
substrate
silicon thin
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58187309A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6079779A (ja
Inventor
Atsushi Kudo
Masayoshi Koba
Setsu Akyama
Hiroshi Imagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consejo Superior de Investigaciones Cientificas CSIC
Sharp Corp
Toyobo Co Ltd
Original Assignee
Consejo Superior de Investigaciones Cientificas CSIC
Sharp Corp
Toyobo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior de Investigaciones Cientificas CSIC, Sharp Corp, Toyobo Co Ltd filed Critical Consejo Superior de Investigaciones Cientificas CSIC
Priority to JP58187309A priority Critical patent/JPS6079779A/ja
Publication of JPS6079779A publication Critical patent/JPS6079779A/ja
Publication of JPH0550151B2 publication Critical patent/JPH0550151B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP58187309A 1983-10-05 1983-10-05 非晶質薄膜を有する太陽電池 Granted JPS6079779A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58187309A JPS6079779A (ja) 1983-10-05 1983-10-05 非晶質薄膜を有する太陽電池

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58187309A JPS6079779A (ja) 1983-10-05 1983-10-05 非晶質薄膜を有する太陽電池

Publications (2)

Publication Number Publication Date
JPS6079779A JPS6079779A (ja) 1985-05-07
JPH0550151B2 true JPH0550151B2 (enrdf_load_stackoverflow) 1993-07-28

Family

ID=16203740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58187309A Granted JPS6079779A (ja) 1983-10-05 1983-10-05 非晶質薄膜を有する太陽電池

Country Status (1)

Country Link
JP (1) JPS6079779A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0299010U (enrdf_load_stackoverflow) * 1989-01-27 1990-08-07
US7022910B2 (en) * 2002-03-29 2006-04-04 Konarka Technologies, Inc. Photovoltaic cells utilizing mesh electrodes

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3110302C1 (de) * 1981-03-17 1982-09-30 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Solarzellen-Traegermembran

Also Published As

Publication number Publication date
JPS6079779A (ja) 1985-05-07

Similar Documents

Publication Publication Date Title
US5800631A (en) Solar cell module having a specific back side covering material and a process for the production of said solar cell module
KR100267515B1 (ko) 특정의 불규칙적 표면 구조의 불투명 기판을 갖는 광기전력 소자
US8119903B2 (en) Method of manufacturing single crystal silicon solar cell and single crystal silicon solar cell
TW201042065A (en) Methods for fabricating copper indium gallium diselenide (CIGS) compound thin films
JP2012516573A (ja) 改良された結晶配向性を有する太陽光発電装置
WO1992006144A1 (en) Method of laminating composite structures for photovoltaic devices
US10121923B2 (en) Laminate and thin-film solar cell comprising same
JPH0550151B2 (enrdf_load_stackoverflow)
JPH10242492A (ja) 非晶質シリコンゲルマニウム薄膜の製造方法及び光起電力素子
TW201010115A (en) Method for depositing an amorphous silicon film for photovoltaic devices with reduced light-induced degradation for improved stabilized performance
JP3112339B2 (ja) 太陽電池モジュール
JP2008537643A (ja) たとえばｔｃｏの無機コーティングを有する箔片の製造方法
KR100916199B1 (ko) 단결정 기판 및 이를 이용한 태양전지 형성방법
JP2750085B2 (ja) 光起電力素子の集電電極作製方法
JP2004056024A (ja) 薄膜太陽電池およびその製造方法
JPS59143378A (ja) 太陽電池
JPH059946B2 (enrdf_load_stackoverflow)
CN114477270B (zh) 一种利用硫钝化生长超薄硫化亚锡纳米片的方法
JPH081959B2 (ja) 太陽電池
JPH0518271B2 (enrdf_load_stackoverflow)
JPH0518269B2 (enrdf_load_stackoverflow)
JP2883231B2 (ja) 積層型光起電力装置の製造方法
JPH0518270B2 (enrdf_load_stackoverflow)
JPH0550150B2 (enrdf_load_stackoverflow)
JPH0518272B2 (enrdf_load_stackoverflow)