JPS6048266U - semiconductor laser equipment - Google Patents
semiconductor laser equipmentInfo
- Publication number
- JPS6048266U JPS6048266U JP13993383U JP13993383U JPS6048266U JP S6048266 U JPS6048266 U JP S6048266U JP 13993383 U JP13993383 U JP 13993383U JP 13993383 U JP13993383 U JP 13993383U JP S6048266 U JPS6048266 U JP S6048266U
- Authority
- JP
- Japan
- Prior art keywords
- laser diode
- semiconductor laser
- diode element
- laser equipment
- protrusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図ａ、 ｂｔ ｃはモニタ用フォトダイオード素子
併置型レーザダイオード用容器の構造例の正面図、平面
図および側面図をそれぞれ示す。第２図ａ？ ｂレーザ
ダイオード素子放熱用を中心とした従来の容器のベース
突起部の形状とレーザダイオード素子実装状態を説明す
る概念の正面図および側面図を示す。第３図ａ、 ｂは
本考案による容器のベース突起部の形状とレーザタイオ
ード素子実装状態を説明する概念の正面図および側面図
を示す。
１．１１・・・・・・レーザタイオード用容器のベース
、２，１２・・・・・・レーザタイオード用容器のベー
ス突起部で夫々１又は１１と一体をなすもの、１２２・
・・・・・本考案で設けられたベース突起部上の段差部
、１２２Ａ・・・・・・本考案で設けられたベース突起
部上段差部に形成された陵線、３・・・・・・電気接続
用リード、４・・・・・・レーザダイオード素子放熱用
の例えばシリコン（Ｓｉ）を基材とするヒートシンク、
５・・・・・・レーサダイオード素子、１０１・・・・
・・レーザタイオード素子載置領域、１０２・・・・・
・モニタ用フォトダイオード素子載置領域。FIGS. 1a and 1btc show a front view, a top view, and a side view, respectively, of a structural example of a container for a laser diode in which a monitoring photodiode element is juxtaposed. Figure 2 a? b shows a front view and a side view of a concept illustrating the shape of the base protrusion of a conventional container mainly for laser diode element heat dissipation and the state in which the laser diode element is mounted; FIGS. 3a and 3b show a conceptual front view and a side view for explaining the shape of the base protrusion of the container and the state in which the laser diode element is mounted according to the present invention. 1.11...Base of laser diode container, 2,12...Base protrusion of laser diode container integral with 1 or 11, respectively, 122.
...Stepped portion on the base protrusion provided in the present invention, 122A... Ridge line formed on the upper step portion of the base protrusion provided in the present invention, 3... ...Lead for electrical connection, 4... Heat sink made of silicon (Si), for example, for heat dissipation of laser diode element,
5... Laser diode element, 101...
...Laser diode element mounting area, 102...
・Monitor photodiode element mounting area.
Claims (1)
起部と一体となった基板ベースを主体としてなるモニタ
用フォトダイオード併置型半導体し−サ装置において、
前記突記部のレーザタイオード素子載置領域に隣接した
状態で該突起部の一部に段状部を設けたことを特徴とす
る半導体レーザ装置。A monitor photodiode juxtaposed semiconductor sensor device having a protrusion on which a laser diode element is placed and having a substrate base integrated with the protrusion as a main body,
A semiconductor laser device characterized in that a stepped portion is provided in a part of the protruding portion adjacent to a laser diode element mounting area of the protruding portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13993383U JPS6048266U (en) | 1983-09-09 | 1983-09-09 | semiconductor laser equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13993383U JPS6048266U (en) | 1983-09-09 | 1983-09-09 | semiconductor laser equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6048266U true JPS6048266U (en) | 1985-04-04 |
Family
ID=30313477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13993383U Pending JPS6048266U (en) | 1983-09-09 | 1983-09-09 | semiconductor laser equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6048266U (en) |
-
1983
- 1983-09-09 JP JP13993383U patent/JPS6048266U/en active Pending
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