JPS6048234U - Ion implantation device - Google Patents
Ion implantation deviceInfo
- Publication number
- JPS6048234U JPS6048234U JP13991583U JP13991583U JPS6048234U JP S6048234 U JPS6048234 U JP S6048234U JP 13991583 U JP13991583 U JP 13991583U JP 13991583 U JP13991583 U JP 13991583U JP S6048234 U JPS6048234 U JP S6048234U
- Authority
- JP
- Japan
- Prior art keywords
- disk
- ion implantation
- implantation device
- ion beam
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図ａ〜ｄは淀来のイオン打込装置のエンドステーシ
ョンを説明するための図、第２図ａ ’−ｅは本発明の
イオン打込装置のエントチステーションを説明するため
の図である。
１・・・・・・イオンビーム照射方向を示す矢印、２・
・・・・・イオン打込室、３・・・・・・ウェハ固定リ
ング、４・・・・・・ウェハ、５・・・・・・ディスク
、６・・・・・・ディスク回転軸、７・・・・・・イオ
ン打込されたウェハ表面領域、８・・・・・・イオン打
込されなかったウェハ表面領域、９・・・・・・イオン
ビーム照射方向を示す矢印、１０・・・・・・ 、イオ
ン打込室、１１・・・・・・ウェハ固定用凸部、１２・
・・・・・ウェハ、１３・・・・・・ディスク、１４・
・・・・・ディスク回転軸、１５・・・・・・イオン打
込されたウェハ表面領域、１６・・・・・・ウェハ固定
用凹部、１７．１８・・・・・・冷却機構。Figures 1 a to d are diagrams for explaining the end station of the conventional ion implantation apparatus, and Figures 2 a' to e are diagrams for explaining the end station of the ion implantation apparatus of the present invention. be. 1...Arrow indicating the ion beam irradiation direction, 2.
...Ion implantation chamber, 3 ... Wafer fixing ring, 4 ... Wafer, 5 ... Disk, 6 ... Disk rotation axis, 7... Wafer surface area where ions were implanted, 8... Wafer surface area where ions were not implanted, 9... Arrow indicating the ion beam irradiation direction, 10. ..., ion implantation chamber, 11... wafer fixing convex portion, 12.
...Wafer, 13...Disk, 14.
. . . Disk rotation axis, 15 . . . Wafer surface area into which ions are implanted, 16 . . . Wafer fixing recess, 17. 18 . . . Cooling mechanism.
Claims (3)
ディスクを回転させながら前記半導体ウェハにイオンビ
ームを照射するイオン打込装置において、前記ディスク
のウェハ取付は面を上に向けると共に前記ディスクの形
状を下方に突出た湾曲した円板状としたことを特徴とす
るイオン打込装置。(1) Mounting a plurality of semiconductor wafers on a disk In an ion implantation device that irradiates the semiconductor wafer with an ion beam while rotating the disk, the wafers are mounted on the disk with the surface facing upward. An ion implantation device characterized by having a shape of a curved disk that protrudes downward.
に対し照射されるイオンビ、−ムを前記ウェハの表面全
体に受ける形状であることを特徴とする実用新案登録請
求の範囲第１項記載のイオン打込装置。(2) The ion beam according to claim 1, wherein the wafer mounting portion of the disk is shaped to receive the ion beam irradiated onto the semiconductor wafer over the entire surface of the wafer. Driving device.
半導体ウェハの温度上昇を抑制するための冷却機構を前
記ディスクの回転軸に接続して備えたことを特徴とする
実用新案登録請求の範囲第１項記載のイオン打込装置。(3) Utility model registration claim No. 1, characterized in that a cooling mechanism for suppressing a temperature rise of the semiconductor wafer during ion beam irradiation via the disk is connected to the rotating shaft of the disk. The ion implantation device according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13991583U JPS6048234U (en) | 1983-09-09 | 1983-09-09 | Ion implantation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13991583U JPS6048234U (en) | 1983-09-09 | 1983-09-09 | Ion implantation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6048234U true JPS6048234U (en) | 1985-04-04 |
Family
ID=30313443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13991583U Pending JPS6048234U (en) | 1983-09-09 | 1983-09-09 | Ion implantation device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6048234U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6255854A (en) * | 1985-09-03 | 1987-03-11 | イ−トン コ−ポレ−シヨン | Ion injector for semiconductor wafer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123174A (en) * | 1976-04-09 | 1977-10-17 | Hitachi Ltd | Specimen scanning method for ion implantation |
-
1983
- 1983-09-09 JP JP13991583U patent/JPS6048234U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52123174A (en) * | 1976-04-09 | 1977-10-17 | Hitachi Ltd | Specimen scanning method for ion implantation |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6255854A (en) * | 1985-09-03 | 1987-03-11 | イ−トン コ−ポレ−シヨン | Ion injector for semiconductor wafer |
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