JPS59117052U - Wafer holding device - Google Patents

Wafer holding device

Info

Publication number
JPS59117052U
JPS59117052U JP980283U JP980283U JPS59117052U JP S59117052 U JPS59117052 U JP S59117052U JP 980283 U JP980283 U JP 980283U JP 980283 U JP980283 U JP 980283U JP S59117052 U JPS59117052 U JP S59117052U
Authority
JP
Japan
Prior art keywords
disk
wafer
ion beam
holding device
wafer holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP980283U
Other languages
Japanese (ja)
Inventor
武 小池
明珍 英次
Original Assignee
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立製作所 filed Critical 株式会社日立製作所
Priority to JP980283U priority Critical patent/JPS59117052U/en
Publication of JPS59117052U publication Critical patent/JPS59117052U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はイオン打込装置の原理図、第2図は従来方式の
説明図、第3図は本考案の一実施例の断面図、第4図は
第3図のP失権平面図である。 フ・・・イオンビーム、6・・・回転円板、12・・・
回転円盤軸、23・・・ウェハ押付板。
Fig. 1 is a diagram of the principle of the ion implantation device, Fig. 2 is an explanatory diagram of the conventional system, Fig. 3 is a sectional view of an embodiment of the present invention, and Fig. 4 is a plan view of the P loss of Fig. 3. . F...Ion beam, 6...Rotating disk, 12...
Rotating disk shaft, 23... wafer pressing plate.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 円盤の円周に沿って複数個のウェハを装着し、そのウェ
ハにほぼ直角にイオンビームを照射し円盤を回転すると
同時に、イオンビームの中心と円盤の中心を結ぶ直径方
向に、円盤を往復運動させるか、照射イオンビームを掃
引して、ウェハの表面に均一にイオンを注入させる、回
転円盤方式イオン打込装置に於て、ウェハと接触する円
盤の表面に内径φ4、外径φ2で厚さ方向にR1の曲率
を持つたリング状の凸面を形成し、その面をウェハとの
接触基準面としたことを特徴とするウェハ保持装置。
Multiple wafers are mounted along the circumference of the disk, and the wafers are irradiated with an ion beam almost perpendicularly to rotate the disk. At the same time, the disk is reciprocated in the diametrical direction connecting the center of the ion beam and the center of the disk. In a rotating disk type ion implantation device, which sweeps the irradiation ion beam and uniformly implants ions onto the surface of the wafer, the surface of the disk in contact with the wafer has an inner diameter of 4 mm and an outer diameter of 2 mm, and has a thickness of 2 mm. A wafer holding device characterized by forming a ring-shaped convex surface having a curvature of R1 in the direction, and using that surface as a reference surface for contact with a wafer.
JP980283U 1983-01-28 1983-01-28 Wafer holding device Pending JPS59117052U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP980283U JPS59117052U (en) 1983-01-28 1983-01-28 Wafer holding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP980283U JPS59117052U (en) 1983-01-28 1983-01-28 Wafer holding device

Publications (1)

Publication Number Publication Date
JPS59117052U true JPS59117052U (en) 1984-08-07

Family

ID=30141249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP980283U Pending JPS59117052U (en) 1983-01-28 1983-01-28 Wafer holding device

Country Status (1)

Country Link
JP (1) JPS59117052U (en)

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