JPS6045022A - Ｌｓｉ製造装置における高さ補正方法 - Google Patents

Ｌｓｉ製造装置における高さ補正方法

Info

Publication number
JPS6045022A
JPS6045022A JP58153773A JP15377383A JPS6045022A JP S6045022 A JPS6045022 A JP S6045022A JP 58153773 A JP58153773 A JP 58153773A JP 15377383 A JP15377383 A JP 15377383A JP S6045022 A JPS6045022 A JP S6045022A
Authority
JP
Japan
Prior art keywords
sample
height
variation
height direction
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58153773A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0449257B2 (enExample
Inventor
Osamu Ikenaga
修 池永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58153773A priority Critical patent/JPS6045022A/ja
Publication of JPS6045022A publication Critical patent/JPS6045022A/ja
Publication of JPH0449257B2 publication Critical patent/JPH0449257B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP58153773A 1983-08-23 1983-08-23 Ｌｓｉ製造装置における高さ補正方法 Granted JPS6045022A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58153773A JPS6045022A (ja) 1983-08-23 1983-08-23 Ｌｓｉ製造装置における高さ補正方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58153773A JPS6045022A (ja) 1983-08-23 1983-08-23 Ｌｓｉ製造装置における高さ補正方法

Publications (2)

Publication Number Publication Date
JPS6045022A true JPS6045022A (ja) 1985-03-11
JPH0449257B2 JPH0449257B2 (enExample) 1992-08-11

Family

ID=15569818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58153773A Granted JPS6045022A (ja) 1983-08-23 1983-08-23 Ｌｓｉ製造装置における高さ補正方法

Country Status (1)

Country Link
JP (1) JPS6045022A (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536990A (en) * 1979-07-16 1980-03-14 Toshiba Corp Apparatus for applying electron beam
JPS59188916A (ja) * 1983-04-11 1984-10-26 Nippon Telegr & Teleph Corp <Ntt> 偏向歪補正方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536990A (en) * 1979-07-16 1980-03-14 Toshiba Corp Apparatus for applying electron beam
JPS59188916A (ja) * 1983-04-11 1984-10-26 Nippon Telegr & Teleph Corp <Ntt> 偏向歪補正方法

Also Published As

Publication number Publication date
JPH0449257B2 (enExample) 1992-08-11

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