JPS6043879A - 発光素子の製造方法 - Google Patents

発光素子の製造方法

Info

Publication number
JPS6043879A
JPS6043879A JP58151521A JP15152183A JPS6043879A JP S6043879 A JPS6043879 A JP S6043879A JP 58151521 A JP58151521 A JP 58151521A JP 15152183 A JP15152183 A JP 15152183A JP S6043879 A JPS6043879 A JP S6043879A
Authority
JP
Japan
Prior art keywords
type
layer
forming
hole
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58151521A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0578196B2 (enrdf_load_stackoverflow
Inventor
Tadashi Komatsubara
小松原 正
Tetsuo Sadamasa
定政 哲雄
Akihiro Hachiman
八幡 彰博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58151521A priority Critical patent/JPS6043879A/ja
Publication of JPS6043879A publication Critical patent/JPS6043879A/ja
Publication of JPH0578196B2 publication Critical patent/JPH0578196B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials

Landscapes

  • Led Devices (AREA)
JP58151521A 1983-08-22 1983-08-22 発光素子の製造方法 Granted JPS6043879A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58151521A JPS6043879A (ja) 1983-08-22 1983-08-22 発光素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58151521A JPS6043879A (ja) 1983-08-22 1983-08-22 発光素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6043879A true JPS6043879A (ja) 1985-03-08
JPH0578196B2 JPH0578196B2 (enrdf_load_stackoverflow) 1993-10-28

Family

ID=15520327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58151521A Granted JPS6043879A (ja) 1983-08-22 1983-08-22 発光素子の製造方法

Country Status (1)

Country Link
JP (1) JPS6043879A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103433A (ja) * 2005-09-30 2007-04-19 Dowa Holdings Co Ltd 発光ダイオード及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103433A (ja) * 2005-09-30 2007-04-19 Dowa Holdings Co Ltd 発光ダイオード及びその製造方法

Also Published As

Publication number Publication date
JPH0578196B2 (enrdf_load_stackoverflow) 1993-10-28

Similar Documents

Publication Publication Date Title
CN111106214B (zh) 一种发光二极管芯片及其制备方法
JPH03225725A (ja) 微小真空管及びその製造方法
JP3855347B2 (ja) 3−5族化合物半導体素子の製造方法
US3998672A (en) Method of producing infrared luminescent diodes
JPS6043879A (ja) 発光素子の製造方法
JP3507716B2 (ja) 半導体発光素子の製造方法
JPH04111487A (ja) 半導体レーザの製造方法
JPS6258692A (ja) 半導体発光装置の製造方法
JP2001313381A (ja) 半導体ウェーハ並びにそれを用いた半導体デバイス及びその製造方法
CN113363365B (zh) 一种多电流通道倒装AlGaInPmini-LED芯片及其制备方法
JPS60245187A (ja) 半導体装置の製造方法
JPS6381887A (ja) 半導体レ−ザ装置およびその製造方法
JPS616880A (ja) 発光半導体素子およびその製造方法
JPH09148666A (ja) 半導体レーザ素子およびその製造方法
JP3426834B2 (ja) 発光ダイオードアレイの製造方法
JPS58137274A (ja) 面発光型半導体発光素子の製造方法
JPH10510102A (ja) チャネル内のリッジ状レーザ
JPS5947480B2 (ja) 半導体装置の製造方法
JPS61191092A (ja) 半導体レ−ザ装置の製造方法
JPS5885583A (ja) 半導体レ−ザ装置の製造方法
KR910005392B1 (ko) 접합전류 제한 영역을 갖는 이중 헤테로 접합형 발광다이오드의 제조방법
JPS6044835B2 (ja) 半導体発光素子
JPH0245986A (ja) 半導体レーザ装置の製造方法
JPH01223729A (ja) 半導体装置の製造方法
JPS59172278A (ja) ZnSe多色発光素子