JPS6043827A - 微細パタ−ンの形成方法 - Google Patents

微細パタ−ンの形成方法

Info

Publication number
JPS6043827A
JPS6043827A JP58151947A JP15194783A JPS6043827A JP S6043827 A JPS6043827 A JP S6043827A JP 58151947 A JP58151947 A JP 58151947A JP 15194783 A JP15194783 A JP 15194783A JP S6043827 A JPS6043827 A JP S6043827A
Authority
JP
Japan
Prior art keywords
film
etched
etching
resist film
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58151947A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0458167B2 (enrdf_load_html_response
Inventor
Kyusaku Nishioka
西岡　久作
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58151947A priority Critical patent/JPS6043827A/ja
Publication of JPS6043827A publication Critical patent/JPS6043827A/ja
Publication of JPH0458167B2 publication Critical patent/JPH0458167B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
JP58151947A 1983-08-20 1983-08-20 微細パタ−ンの形成方法 Granted JPS6043827A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58151947A JPS6043827A (ja) 1983-08-20 1983-08-20 微細パタ−ンの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58151947A JPS6043827A (ja) 1983-08-20 1983-08-20 微細パタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS6043827A true JPS6043827A (ja) 1985-03-08
JPH0458167B2 JPH0458167B2 (enrdf_load_html_response) 1992-09-16

Family

ID=15529679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58151947A Granted JPS6043827A (ja) 1983-08-20 1983-08-20 微細パタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS6043827A (enrdf_load_html_response)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6316623A (ja) * 1986-07-08 1988-01-23 Fujitsu Ltd 半導体装置の製造方法
JPS63273767A (ja) * 1987-05-06 1988-11-10 三洋電機株式会社 吸収式冷温水機のプレ−ト式熱交換器
EP0200477A3 (en) * 1985-04-26 1988-12-28 Hitachi, Ltd. Process for pattern formation
JPH0396286A (ja) * 1989-09-08 1991-04-22 Nippon Telegr & Teleph Corp <Ntt> パターン化酸化物超伝導膜形成法
JPH03235380A (ja) * 1990-02-13 1991-10-21 Sumitomo Cement Co Ltd 超伝導薄膜パターンの製造方法
JPH0792688A (ja) * 1990-02-26 1995-04-07 Applied Materials Inc 多層フォトレジストエッチング方法
JP2002110509A (ja) * 2000-09-27 2002-04-12 Fujitsu Ltd 電子デバイスの製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0200477A3 (en) * 1985-04-26 1988-12-28 Hitachi, Ltd. Process for pattern formation
JPS6316623A (ja) * 1986-07-08 1988-01-23 Fujitsu Ltd 半導体装置の製造方法
JPS63273767A (ja) * 1987-05-06 1988-11-10 三洋電機株式会社 吸収式冷温水機のプレ−ト式熱交換器
JPH0396286A (ja) * 1989-09-08 1991-04-22 Nippon Telegr & Teleph Corp <Ntt> パターン化酸化物超伝導膜形成法
JPH03235380A (ja) * 1990-02-13 1991-10-21 Sumitomo Cement Co Ltd 超伝導薄膜パターンの製造方法
JPH0792688A (ja) * 1990-02-26 1995-04-07 Applied Materials Inc 多層フォトレジストエッチング方法
JP2002110509A (ja) * 2000-09-27 2002-04-12 Fujitsu Ltd 電子デバイスの製造方法

Also Published As

Publication number Publication date
JPH0458167B2 (enrdf_load_html_response) 1992-09-16

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