JPS6040193B2 - トライアツク - Google Patents
トライアツクInfo
- Publication number
- JPS6040193B2 JPS6040193B2 JP55158066A JP15806680A JPS6040193B2 JP S6040193 B2 JPS6040193 B2 JP S6040193B2 JP 55158066 A JP55158066 A JP 55158066A JP 15806680 A JP15806680 A JP 15806680A JP S6040193 B2 JPS6040193 B2 JP S6040193B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- emitter
- thyristor
- base layer
- emitter layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000000969 carrier Substances 0.000 description 9
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 210000004709 eyebrow Anatomy 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 241000270666 Testudines Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013642 negative control Substances 0.000 description 1
- 239000013641 positive control Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19792945380 DE2945380A1 (de) | 1979-11-09 | 1979-11-09 | Triac mit einem mehrschichten-halbleiterkoerper |
| DE2945380.3 | 1979-11-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5683071A JPS5683071A (en) | 1981-07-07 |
| JPS6040193B2 true JPS6040193B2 (ja) | 1985-09-10 |
Family
ID=6085629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55158066A Expired JPS6040193B2 (ja) | 1979-11-09 | 1980-11-10 | トライアツク |
Country Status (6)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61202995U (US07943777-20110517-C00090.png) * | 1985-06-06 | 1986-12-20 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3118291A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Triac und verfahren zu seinem betrieb |
| DE3118365A1 (de) * | 1981-05-08 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden |
| DE3118293A1 (de) * | 1981-05-08 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit verbessertem schaltverhalten und verfahren zu seinem betrieb |
| US4797720A (en) * | 1981-07-29 | 1989-01-10 | American Telephone And Telegraph Company, At&T Bell Laboratories | Controlled breakover bidirectional semiconductor switch |
| EP0106147A1 (en) * | 1982-10-04 | 1984-04-25 | General Electric Company | Thyristor with turn-off capability |
| FR2536909A1 (fr) * | 1982-11-25 | 1984-06-01 | Centre Nat Rech Scient | Structure de thyristor a allumage intrinseque et son application a la realisation d'un dispositif bidirectionnel |
| FR2585882B1 (fr) * | 1985-07-30 | 1988-06-24 | Thomson Csf | Triac desensibilise vis-a-vis des risques de reamorcage a la commutation sur charge reactive |
| US4760432A (en) * | 1985-11-04 | 1988-07-26 | Siemens Aktiengesellschaft | Thyristor having controllable emitter-base shorts |
| JPS64759A (en) * | 1987-03-31 | 1989-01-05 | Toshiba Corp | Semiconductor for two-way controlled rectification |
| US4857983A (en) * | 1987-05-19 | 1989-08-15 | General Electric Company | Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication |
| JPH01286465A (ja) * | 1988-05-13 | 1989-11-17 | Toshiba Corp | 双方向制御整流半導体装置 |
| JP2782638B2 (ja) * | 1990-12-28 | 1998-08-06 | 富士電機株式会社 | Ｍｏｓコントロールサイリスタ |
| EP0507974B1 (de) * | 1991-04-11 | 1995-12-20 | Asea Brown Boveri Ag | Abschaltbares, MOS-gesteuertes Leistungshalbleiter-Bauelement |
| US5343053A (en) * | 1993-05-21 | 1994-08-30 | David Sarnoff Research Center Inc. | SCR electrostatic discharge protection for integrated circuits |
| US5483087A (en) * | 1994-07-08 | 1996-01-09 | International Rectifier Corporation | Bidirectional thyristor with MOS turn-off capability with a single gate |
| DE4433796A1 (de) * | 1994-09-22 | 1996-03-28 | Daimler Benz Ag | Steuerbares Halbleiterbauelement |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL293292A (US07943777-20110517-C00090.png) * | 1962-06-11 | |||
| FR1483998A (US07943777-20110517-C00090.png) * | 1965-05-14 | 1967-09-13 | ||
| DE2040657C3 (de) * | 1970-08-17 | 1975-10-02 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Elektronischer Schalter für Halbleiterkoppelpunkte in Fernmelde-, insbesondere Fernsprechvermittlungsanlagen |
| JPS5125116B1 (US07943777-20110517-C00090.png) * | 1970-10-08 | 1976-07-28 | ||
| AU446887B2 (en) * | 1970-11-26 | 1974-04-04 | Matsushita Electric Industrial Co., Ltd. | Field-effect semiconductor device |
| JPS5135114B1 (US07943777-20110517-C00090.png) * | 1970-12-28 | 1976-09-30 | ||
| US3858235A (en) * | 1971-07-05 | 1974-12-31 | Siemens Ag | Planar four-layer-diode having a lateral arrangement of one of two partial transistors |
| US3831187A (en) * | 1973-04-11 | 1974-08-20 | Rca Corp | Thyristor having capacitively coupled control electrode |
| US3896476A (en) * | 1973-05-02 | 1975-07-22 | Mitsubishi Electric Corp | Semiconductor switching device |
| JPS5629458B2 (US07943777-20110517-C00090.png) * | 1973-07-02 | 1981-07-08 | ||
| JPS50123282A (US07943777-20110517-C00090.png) * | 1974-03-15 | 1975-09-27 | ||
| SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
| JPS5933986B2 (ja) * | 1975-09-12 | 1984-08-20 | 三菱電機株式会社 | 半導体装置 |
| US4087834A (en) * | 1976-03-22 | 1978-05-02 | General Electric Company | Self-protecting semiconductor device |
| SU793421A3 (ru) * | 1976-06-02 | 1980-12-30 | Ббц Аг Браун | Фототиристор |
| US4092703A (en) * | 1977-03-15 | 1978-05-30 | Kabushiki Kaisha Meidensha | Gate controlled semiconductor device |
| DE2723951A1 (de) * | 1977-05-27 | 1978-11-30 | Bbc Brown Boveri & Cie | In zwei quadranten der strom- spannungs-charakteristik schaltbares leistungs-halbleiterbauelement |
| DE2757295A1 (de) * | 1977-12-22 | 1979-07-12 | Licentia Gmbh | Sicherungsschaltung fuer ein halbleiterelement |
| US4219833A (en) * | 1978-05-22 | 1980-08-26 | Electric Power Research Institute, Inc. | Multigate light fired thyristor and method |
| US4301462A (en) * | 1978-08-03 | 1981-11-17 | Westinghouse Electric Corp. | Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber |
| US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
| JPS5574168A (en) * | 1978-11-28 | 1980-06-04 | Oki Electric Ind Co Ltd | Pnpn switch |
| SE430450B (sv) * | 1979-04-03 | 1983-11-14 | Asea Ab | Tvapoligt overstromsskydd for inkoppling i en stromforande ledning |
-
1979
- 1979-11-09 DE DE19792945380 patent/DE2945380A1/de active Granted
-
1980
- 1980-10-22 US US06/199,519 patent/US4611128A/en not_active Expired - Lifetime
- 1980-11-04 EP EP80106777A patent/EP0028799B1/de not_active Expired
- 1980-11-07 CA CA000364285A patent/CA1145058A/en not_active Expired
- 1980-11-07 BR BR8007246A patent/BR8007246A/pt unknown
- 1980-11-10 JP JP55158066A patent/JPS6040193B2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61202995U (US07943777-20110517-C00090.png) * | 1985-06-06 | 1986-12-20 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0028799A3 (en) | 1981-06-17 |
| EP0028799A2 (de) | 1981-05-20 |
| DE2945380C2 (US07943777-20110517-C00090.png) | 1991-03-14 |
| BR8007246A (pt) | 1981-05-19 |
| CA1145058A (en) | 1983-04-19 |
| US4611128A (en) | 1986-09-09 |
| JPS5683071A (en) | 1981-07-07 |
| EP0028799B1 (de) | 1983-05-11 |
| DE2945380A1 (de) | 1981-05-21 |
