JPS6039832A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JPS6039832A
JPS6039832A JP14777383A JP14777383A JPS6039832A JP S6039832 A JPS6039832 A JP S6039832A JP 14777383 A JP14777383 A JP 14777383A JP 14777383 A JP14777383 A JP 14777383A JP S6039832 A JPS6039832 A JP S6039832A
Authority
JP
Japan
Prior art keywords
plasma
target electrode
gas
plate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14777383A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0452611B2 (enrdf_load_stackoverflow
Inventor
Takeshi Yoshizawa
吉沢　威
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14777383A priority Critical patent/JPS6039832A/ja
Publication of JPS6039832A publication Critical patent/JPS6039832A/ja
Publication of JPH0452611B2 publication Critical patent/JPH0452611B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP14777383A 1983-08-12 1983-08-12 プラズマ処理装置 Granted JPS6039832A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14777383A JPS6039832A (ja) 1983-08-12 1983-08-12 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14777383A JPS6039832A (ja) 1983-08-12 1983-08-12 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS6039832A true JPS6039832A (ja) 1985-03-01
JPH0452611B2 JPH0452611B2 (enrdf_load_stackoverflow) 1992-08-24

Family

ID=15437850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14777383A Granted JPS6039832A (ja) 1983-08-12 1983-08-12 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS6039832A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61278144A (ja) * 1985-06-01 1986-12-09 Anelva Corp プラズマ処理装置
US4718976A (en) * 1982-03-31 1988-01-12 Fujitsu Limited Process and apparatus for plasma treatment
JPS63237528A (ja) * 1987-03-26 1988-10-04 Fujitsu Ltd 半導体製造装置
JPH0237717A (ja) * 1988-07-27 1990-02-07 Tokyo Electron Ltd 処理装置
US5058527A (en) * 1990-07-24 1991-10-22 Ricoh Company, Ltd. Thin film forming apparatus
US5174825A (en) * 1990-08-23 1992-12-29 Texas Instruments Incorporated Uniform gas distributor to a wafer
US5248371A (en) * 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
US5423936A (en) * 1992-10-19 1995-06-13 Hitachi, Ltd. Plasma etching system
JPH08274074A (ja) * 1995-03-31 1996-10-18 Nec Corp プラズマ処理装置
US6059885A (en) * 1996-12-19 2000-05-09 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and method for forming thin film
WO2009089794A1 (fr) * 2008-01-14 2009-07-23 Beijing Nmc Co., Ltd. Equipement de traitement au plasma et appareil de distribution de gaz pour celui-ci

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54103751U (enrdf_load_stackoverflow) * 1977-12-29 1979-07-21
JPS57185982A (en) * 1981-05-06 1982-11-16 Perkin Elmer Corp Plasma etching device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54103751U (enrdf_load_stackoverflow) * 1977-12-29 1979-07-21
JPS57185982A (en) * 1981-05-06 1982-11-16 Perkin Elmer Corp Plasma etching device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4718976A (en) * 1982-03-31 1988-01-12 Fujitsu Limited Process and apparatus for plasma treatment
JPS61278144A (ja) * 1985-06-01 1986-12-09 Anelva Corp プラズマ処理装置
JPS63237528A (ja) * 1987-03-26 1988-10-04 Fujitsu Ltd 半導体製造装置
JPH0237717A (ja) * 1988-07-27 1990-02-07 Tokyo Electron Ltd 処理装置
US5058527A (en) * 1990-07-24 1991-10-22 Ricoh Company, Ltd. Thin film forming apparatus
US5174825A (en) * 1990-08-23 1992-12-29 Texas Instruments Incorporated Uniform gas distributor to a wafer
US5248371A (en) * 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
US5423936A (en) * 1992-10-19 1995-06-13 Hitachi, Ltd. Plasma etching system
JPH08274074A (ja) * 1995-03-31 1996-10-18 Nec Corp プラズマ処理装置
US6059885A (en) * 1996-12-19 2000-05-09 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus and method for forming thin film
WO2009089794A1 (fr) * 2008-01-14 2009-07-23 Beijing Nmc Co., Ltd. Equipement de traitement au plasma et appareil de distribution de gaz pour celui-ci

Also Published As

Publication number Publication date
JPH0452611B2 (enrdf_load_stackoverflow) 1992-08-24

Similar Documents

Publication Publication Date Title
EP0730532B1 (en) Topology induced plasma enhancement for etched uniformity improvement
JPS6039832A (ja) プラズマ処理装置
JP2000030896A (ja) プラズマ閉込め装置
JPH02234419A (ja) プラズマ電極
JP3682178B2 (ja) プラズマ処理方法及びプラズマ処理装置
JPH0473289B2 (enrdf_load_stackoverflow)
JPH0423429A (ja) 半導体装置のプラズマ処理装置及びプラズマ処理方法
JPS63141318A (ja) 試料処理用ガス排気装置
CN106935530B (zh) 一种等离子体刻蚀光刻胶装置
JP2004349375A (ja) ドライエッチング装置のガス分散板
JPH02184022A (ja) Ｃｖｄ電極
JP2669168B2 (ja) マイクロ波プラズマ処理装置
JP2541393B2 (ja) プラズマ発生装置
JPS62210623A (ja) 気相反応装置用電極
JPS5966120A (ja) 半導体製造装置
JPH0241167B2 (enrdf_load_stackoverflow)
JPH11350118A (ja) 成膜装置
JPH0744017Y2 (ja) プラズマアッシング装置
JPH07142193A (ja) マイクロ波プラズマ処理装置
JPH01124218A (ja) マスク基板のドライエッチング方法
JPS63133617A (ja) プラズマプロセス装置
JPS5990629A (ja) プラズマｃｖｄ装置
JPS596544A (ja) プラズマエツチング用半導体基板載置治具
JPS61174721A (ja) 平行平板形ドライエツチング装置
JP2002299255A (ja) 半導体製造装置