JPS6030181A - Amorphous thin film photovoltaic element - Google Patents
Amorphous thin film photovoltaic elementInfo
- Publication number
- JPS6030181A JPS6030181A JP58138028A JP13802883A JPS6030181A JP S6030181 A JPS6030181 A JP S6030181A JP 58138028 A JP58138028 A JP 58138028A JP 13802883 A JP13802883 A JP 13802883A JP S6030181 A JPS6030181 A JP S6030181A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- intrinsic
- type
- amorphous silicon
- band width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000003287 optical effect Effects 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 19
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 6
- 239000010408 film Substances 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 229910052732 germanium Inorganic materials 0.000 abstract description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 229920001296 polysiloxane Polymers 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 238000002310 reflectometry Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 9
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は非晶質前１模からなる光起電力素子に関する。[Detailed description of the invention] Industrial applications The present invention relates to a photovoltaic device consisting of an amorphous substrate.
従来例の構成とその問題点
最近、非晶質シリコンを主材料とする薄膜光起動力素子
は、安価な光起電力素子として注目を集めている。しか
し、非晶質シリコンの光学的禁止帯幅ば１．６〜１．ｓ
ｅＶであり、かつ発生した電子、正孔の拡散長がＩｙ常
に短いため、６６０〜７００ｎｍ以」−の長波長光の収
集効率が悪く、光の利用効率が悪いという欠点があった
。Conventional Structures and Problems Recently, thin film photovoltaic devices mainly made of amorphous silicon have attracted attention as inexpensive photovoltaic devices. However, the optical bandgap width of amorphous silicon is 1.6 to 1. s
eV, and the diffusion length of the generated electrons and holes is always short, so there was a drawback that the collection efficiency of long wavelength light of 660 to 700 nm or more was poor, and the light utilization efficiency was poor.
これを解決する方法として、光学的禁止帯幅が１．３〜
１．５ｅＶとなる非晶質シリコンゲルマご一つムを１型
（真性）層全部寸たは人躬光側と反対側のｌ型層の端部
に使用し、その部分で長波長光る一有効に利用する試み
が行なわれている。しかし、非晶質シリコンゲルマニウ
ムは、非晶質シリコンに比してさらに電子、正孔の拡散
長が短く、結甲的に光電変換効率の向上が行なわれない
のが現状である。As a way to solve this problem, the optical bandgap width is 1.3~
An amorphous silicon germanium film with a voltage of 1.5 eV is used for the entire length of the 1-type (intrinsic) layer or at the end of the 1-type layer on the side opposite to the human light side. Efforts are being made to utilize it effectively. However, amorphous silicon germanium has a shorter diffusion length of electrons and holes than amorphous silicon, and the current situation is that the photoelectric conversion efficiency cannot be significantly improved.
発明の目的
本発明は、」二重問題点を軽減し、高効率な光起電力素
子を得る新規な構成を提供するものである。OBJECTS OF THE INVENTION The present invention provides a novel configuration that alleviates the dual problems and provides a highly efficient photovoltaic device.
発明の構成
本発明は、導電性基板上に、炭素原子、酸素原子あるい
は窒素原子を導入したある導電Ｊ（１］の非晶質シリコ
ン層、真性もしくは真性に近い非晶質シリコン層、真性
もしくは真性に近いゲルマニウムおよびスズ原子を含む
非晶質シリコン層、 Ｊ’ｒｌ’Ｊ−＃）しくけ真性に
近い非晶質シリコン層、炭素原子。Structure of the Invention The present invention provides an amorphous silicon layer of a certain conductivity J(1) into which carbon atoms, oxygen atoms, or nitrogen atoms are introduced, an intrinsic or near-intrinsic amorphous silicon layer, an intrinsic or An amorphous silicon layer containing near-intrinsic germanium and tin atoms, J'rl'J-#) A near-intrinsic amorphous silicon layer, carbon atoms.
酸素原子あるいは窒素原子を導入した前記導電型と反対
導電型の非晶７１７＋）コン膜および導電性膜を順次配
する等によりｐ−１−ｎ構造をもつ光起電力素子におい
て、その真性型層のｐ型層およびｎ型層の近傍を除く一
部分に、その部分以外の真性型層より光学的禁止帯幅の
小さい真性型層をもつことを特徴とする。さらに具体的
には真性層を従来型の光起電力素子に用いられた真性層
の厚さの￥。〜１イ程度とし、光によって発生した電子
。In a photovoltaic element having a p-1-n structure, the intrinsic type layer is formed by sequentially disposing an amorphous 717+) conductive film of the conductivity type opposite to the above conductivity type into which oxygen atoms or nitrogen atoms are introduced, and a conductive film. It is characterized by having an intrinsic type layer in a part excluding the vicinity of the p-type layer and n-type layer, which has an optical bandgap width smaller than that of the intrinsic type layer other than that part. More specifically, the thickness of the intrinsic layer used in conventional photovoltaic devices. ~1A, and is an electron generated by light.
正孔の拡散長ケもって充分に収集可能の厚さとするもの
である。The thickness is such that holes can be sufficiently collected by the diffusion length.
実施例の説明
以下、本発明の構成およびその製造法について図面に基
づいて説明する。図において、１ｉ１′：ｌ：例えばガ
ラス基板、２ばＩＴＯやＳｎＯ，、あるいはＩＴＯとＳ
ｎＯ２の二層膜である。この透明導電膜上に炭素原子を
導入し／こｐ型非晶買シリコン層３を例えばｉｏｏ〜２
０ＯＡ程度の薄膜として形成する。DESCRIPTION OF EMBODIMENTS Hereinafter, the structure of the present invention and its manufacturing method will be explained based on the drawings. In the figure, 1i1':l: For example, a glass substrate, 2: ITO, SnO, or ITO and S
It is a two-layer film of nO2. Carbon atoms are introduced onto this transparent conductive film and the p-type amorphous silicon layer 3 is
It is formed as a thin film of approximately 0OA.
この層の形成には５ｊ−Ｈ４とＢ２Ｈ６ガス以外に例え
ばＣＨ４ガスを混合したガスを原料ガスとして用い律る
。このときの条件としては、例えばＳｉＨ〆対してＢ２
Ｈ６は０．１ｖｏ１％、 ＣＨ４は５０Ｖｏ１％程度と
し、基板温度２００〜２６０°Ｃで高周波クロー放電す
る。４は厚さ５００〜１０００人程度の真性非晶質シリ
コン層であるが、不純物が入れられていない非晶質シリ
コン層は少しｎ型に近い真性型であるだめ、ＳｉＨ４に
対１７．ｓ ｏ 〜ｓ ｏ ｐｐｍ程度の８２Ｈ６を混
合し、本来の意味での真性型もしくは少しｐ型に近い真
性型層としている。５は真性型非晶質シリコンゲルマニ
ウノ、層であり、真性型非晶質７リコン層４が１．７〜
ｉ、ｓｅＶ程度の光学禁止帯幅を有するのに比へ１，４
〜１．６ｅＶ と小さい光学禁止帯幅を有する。この層
の形成には５ＩＨ４ガスとＧｅＨ４ガスを、：ｏ、２ｇ
度の混合比の原料ガスを用い、ルカ厚は２００〜５００
Ａ程度である。６は厚さ１００〜５００Ａ程度の不純物
が添加されない真性型非晶質シリコン層であり、真性層
４と同様の光学的禁止帯幅を有する。７け炭素原子を導
入したｎ型非晶質７リコン層で、この層の形成にはＳｉ
Ｈ４，ＯＨ４，ＰＨ，の混合ガスを用い、ＰＨ３はＳｉ
Ｈ４ガスに対し１ ｖｏ１％程度とし、ＯＨ，はＳｉＨ
，に対し５０ ｖｏ１％程度とし、１００〜３００Ａ程
度形成する。８は反射率の高い金属電極で、例えばＡｇ
を○、１〜１μｍ程度真空蒸着法で形成する。このよう
にして目的の高効率な光起電力素子を完成することがで
きる。In forming this layer, a gas mixture of, for example, CH4 gas in addition to 5j-H4 and B2H6 gas is used as a raw material gas. The conditions at this time include, for example, B2 for SiH
H6 is 0.1 vol%, CH4 is about 50 vol 1%, and high frequency claw discharge is performed at a substrate temperature of 200 to 260°C. 4 is an intrinsic amorphous silicon layer with a thickness of about 500 to 1000 nm, but since the amorphous silicon layer without any impurities is an intrinsic type, which is slightly closer to n-type, it has a thickness of 17. About so to so ppm of 82H6 is mixed to form an intrinsic type layer in the original sense or an intrinsic type layer slightly close to p type. 5 is an intrinsic type amorphous silicon germanium layer, and the intrinsic type amorphous 7 silicon layer 4 is 1.7~
Although it has an optical band gap of about i, seV, the ratio is 1.4
It has a small optical band gap of ~1.6 eV. To form this layer, 5IH4 gas and GeH4 gas were used: o, 2g
Using a raw material gas with a mixing ratio of
It is about A. Reference numeral 6 denotes an intrinsic type amorphous silicon layer to which no impurities are added, with a thickness of about 100 to 500 Å, and has the same optical bandgap width as the intrinsic layer 4 . This is an n-type amorphous 7-Li layer with 7 carbon atoms introduced, and Si is used to form this layer.
Using a mixed gas of H4, OH4, PH, PH3 is Si
About 1 vol 1% for H4 gas, OH, is SiH
, about 50 vol. 1%, and about 100 to 300 A is formed. 8 is a metal electrode with high reflectance, for example Ag
○: Formed by vacuum evaporation to a thickness of about 1 to 1 μm. In this way, the desired highly efficient photovoltaic device can be completed.
このような構成をとることにより、長波長光の光吸収ニ
Ｉ：多いという利点かあるが、電子、正孔の拡散長の非
常に小さいという欠点のある非晶質シリコンゲルマニウ
ム層を真性層の中央近くに位置さ一１＝ｒ、かつその層
の厚さを薄くすることにより、電子、正孔の再結合の割
合を小さくし、さらにｎ型層の光学禁止帯幅を大きくす
ることにより、ｐ外層で吸収しきれなかった長波長をＡ
ｇ電極７で反則さぜ、再び真性層で吸収さぜ、光起電力
として利用し、各真性層の厚さがｌ（すいことに」：る
光利用率の低下を・十分に補っている。By adopting such a configuration, the amorphous silicon germanium layer, which has the advantage of having a large amount of light absorption of long wavelength light but has the disadvantage of having a very small diffusion length for electrons and holes, can be replaced with an intrinsic layer. By positioning it near the center and reducing the thickness of the layer, the rate of recombination of electrons and holes is reduced, and by increasing the optical forbidden band width of the n-type layer, The long wavelength that could not be completely absorbed by the p outer layer is
The light is absorbed by the g electrode 7, is absorbed again by the intrinsic layer, and is used as a photovoltaic force, sufficiently compensating for the decrease in the light utilization rate due to the thickness of each intrinsic layer. .
庁お」−記実施例では、非晶質７リコン薄膜てあったが
他の非晶質薄膜からなる光起電力素子であっても」：い
。１だ実施例ではガラス」−に透明電極を形成しガラス
側から入光し２、かつｐ型層から入光する光起電力素子
を示し／こが、金属板」二に形成し最後に透明電極を形
成し、前・記透明電極から入光してもよい。さらにｐ型
層３．真性型層４〜６゜ｎ型層７と形成する代わりに、
ｎ型層７．Ａ件型層６〜４、ｐ型層３の順に形成しても
よい。In the example described above, an amorphous 7-licon thin film was used, but a photovoltaic element made of other amorphous thin films may also be used. In the first embodiment, a photovoltaic element is shown in which a transparent electrode is formed on a glass plate, and light enters from the glass side.2, and light enters from a p-type layer. An electrode may be formed and light may be input from the transparent electrode. Furthermore, p-type layer 3. Instead of forming the intrinsic type layer 4 to 6 degrees with the n type layer 7,
n-type layer7. The A-type layers 6 to 4 and the p-type layer 3 may be formed in this order.
発明の効果
本発明によれば、ＡｆＪ述のように光の利用率を向上さ
せながらしかも光によって発生した電子および正孔の河
結合の割合を小さくすることか可能であり、高い変換効
率を有する光起電素子かＩＷられる。Effects of the Invention According to the present invention, as mentioned in AfJ, it is possible to improve the light utilization efficiency and also to reduce the ratio of river coupling of electrons and holes generated by light, resulting in high conversion efficiency. The photovoltaic element is IW.
図面は本発明の一実施例の光起電力素子の構成例を示す
縦断面図である１、
１・・・・ガラス基板、２・・透明導電１１つ↓、３
・ｐ型層、４〜６・・・真（’Ｉ−Ｊ８す層、７ ・ｎ
型層、８・・・・金属電極。The drawings are vertical cross-sectional views showing an example of the configuration of a photovoltaic device according to an embodiment of the present invention.
・P-type layer, 4-6... true ('I-J8 layer, 7 ・n
Mold layer, 8...metal electrode.
Claims (1)
を有し、その真性−型層のｐ型層およびｎ型層の近傍を
除く一部分に、その部分以外の真性型層より光学的禁止
帯幅の小さい真性型層を持つことを特徴とする非晶質薄
膜光起電力素子。It has a p-1-n structure consisting of an amorphous thin film formed on a "substrate", and a part of the intrinsic-type layer excluding the vicinity of the p-type layer and n-type layer has a p-1-n structure consisting of an amorphous thin film formed on a substrate. An amorphous thin film photovoltaic device characterized by having an intrinsic type layer with a small optical band gap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58138028A JPS6030181A (en) | 1983-07-28 | 1983-07-28 | Amorphous thin film photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58138028A JPS6030181A (en) | 1983-07-28 | 1983-07-28 | Amorphous thin film photovoltaic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6030181A true JPS6030181A (en) | 1985-02-15 |
Family
ID=15212354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58138028A Pending JPS6030181A (en) | 1983-07-28 | 1983-07-28 | Amorphous thin film photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6030181A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63143877A (en) * | 1986-12-08 | 1988-06-16 | Hitachi Ltd | Amorphous solar cell |
| JPH0232569A (en) * | 1988-07-22 | 1990-02-02 | Mitsubishi Electric Corp | Amorphous solar cell |
| JPH03131073A (en) * | 1989-10-17 | 1991-06-04 | Canon Inc | Photovoltaic element |
| JPH03131072A (en) * | 1989-10-17 | 1991-06-04 | Canon Inc | Photovoltaic element |
| JPH03131071A (en) * | 1989-10-17 | 1991-06-04 | Canon Inc | Photovoltaic element |
| JPH04255273A (en) * | 1991-02-07 | 1992-09-10 | Canon Inc | Photovoltaic element |
| JP2014003275A (en) * | 2012-06-14 | 2014-01-09 | Nexpower Technology Corp | Thin-film solar cell and method of manufacturing the same |
-
1983
- 1983-07-28 JP JP58138028A patent/JPS6030181A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63143877A (en) * | 1986-12-08 | 1988-06-16 | Hitachi Ltd | Amorphous solar cell |
| JPH0232569A (en) * | 1988-07-22 | 1990-02-02 | Mitsubishi Electric Corp | Amorphous solar cell |
| JPH03131073A (en) * | 1989-10-17 | 1991-06-04 | Canon Inc | Photovoltaic element |
| JPH03131072A (en) * | 1989-10-17 | 1991-06-04 | Canon Inc | Photovoltaic element |
| JPH03131071A (en) * | 1989-10-17 | 1991-06-04 | Canon Inc | Photovoltaic element |
| JPH04255273A (en) * | 1991-02-07 | 1992-09-10 | Canon Inc | Photovoltaic element |
| JP2014003275A (en) * | 2012-06-14 | 2014-01-09 | Nexpower Technology Corp | Thin-film solar cell and method of manufacturing the same |
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