JP2680583B2 - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JP2680583B2 JP2680583B2 JP62283471A JP28347187A JP2680583B2 JP 2680583 B2 JP2680583 B2 JP 2680583B2 JP 62283471 A JP62283471 A JP 62283471A JP 28347187 A JP28347187 A JP 28347187A JP 2680583 B2 JP2680583 B2 JP 2680583B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- type
- type semiconductor
- atomic density
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 72
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はｐ型又はｎ型半導体層等のドーピング層の光
学的禁制帯幅を広くすることなくドーピング層の光吸収
の低減を可能とした光起電力装置に関するものである。
〔従来技術〕
一般に太陽電池等の光起電力装置では光活性層への入
射光量を増大して光起電流を高める方法として、光入射
側に位置するｐ型又はｎ型半導体層等のドーピング層の
光学的禁制帯幅を広くし、ドーピング層での光吸収を低
減することが行われている（APPL.Phys.Lett39（３）,2
37頁1 August1981）。
第６図は非晶質半導体からなる従来の光起電力装置を
示す断面構造図であり、ガラス製の透光性絶縁基板１上
に透明導電層２、ｐ型の半導体層３、ｉ型の半導体層
４、ｎ型の半導体層５、裏面電極層６をこの順序に積層
して形成してある。
このような従来装置の形成条件の１例を示すと表１に
示す通りである。
〔発明が解決しようとする問題点〕
ところでこのような従来方法では光学的禁制帯幅を広
くするとドーピングによる高導電膜化が難しくなり、電
気的特性の低下を免れ得ないという問題があった。
本発明はかかる事情に鑑みなされたものであって、そ
の目的とするところはドーピング層の高導電性を損なう
ことなく、この層による光吸収を低減し、電気的特性の
向上を図れるようにした光起電力装置を提供するにあ
る。
〔問題点を解決するための手段〕
本発明に係る光起電力装置にあっては、ｐ型又はｎ型
半導体層の少なくとも一層が、ｉ型半導体層よりも原子
密度が小さく、且つ水素原子を除いた原子密度が0.5〜
4.5×1022cm-3である非晶質シリコンからなることを特
徴とする。
〔作用〕
本発明装置にあってはこれによってドーピング層自体
の導電性を損なうことなく、しかもこの層における光吸
収を低減し得る。
〔実施例１〕
以下本発明をその実施例を示す図面に基づき具体的に
説明する。
第１図は本発明に係る光起電力装置（以下本発明装置
という）を示す断面構造図であり、図中１はガラス製の
透光性絶縁基板、２は透明導電層を示している。透光性
絶縁基板１上に透明導電層２を積層形成した後、これに
電導型がｐ型の通常よりも低原子密度化した非晶質シリ
コンからなる半導体層（以下ｐ型低原子密度半導体層と
いう）13、従来と同様の光活性層である電導型がｉ型の
半導体層４、同じく従来と同様の電導型がｎ型の半導体
層５、裏面電極層６をこの順序に積層形成して構成され
ている。
前記ｐ型低原子密度半導体層13は水素雰囲気中での反
応性スパッタ法によって、またこの層以外の半導体層4,
5は容量結合型グロー放電を用いて形成する。
グロー放電を用いた場合はｐ型半導体層13の形成には
シラン（SiH4），メタン（CH4），及びジボラン（B
2H6）を原料として用い、またｉ型半導体層の形成には
シランを、更にｎ型半導体層５の形成にはシラン、ホス
フィン（PH3）を原料として用いている。
反応性スパッタのターゲットには1018cm-3のＢをドー
プしたＣ−Si又は1018cm-3のＰをドープしたＣ−Siを用
いる。ｐ型低原子密度半導体層13,i型半導体層4,n型半
導体層５の他の形成条件は表２に示すとおりである。な
お基板としてガラス板を用い、ｐ型の半導体層側を光の
入射側とした場合について説明する。
ちなみにｐ型低原子密度半導体層13の水素を除く原子
密度は3.9×1022cm-3、通常の非晶質シリコンからなる
ｉ型半導体層４の水素を除く原子密度は5.0×1022c
m-3、ｎ型半導体層５の水素を除く原子密度は5.0×1022
cm-3である。従って、上記ｐ型低原子密度半導体層は、
ｉ型半導体層よりも原子密度が小さく、且つ通常よりも
低原子密度化した非晶質シリコンからなる。
このような本発明の実施例１における電気的特性は表
３に示すとおりである。なお電極面積は1cm2である。従
来例は表１に示す条件で製造したものである。
表３から明らかな如く、転落電流、変換効率に大幅な
向上が認められる。
第２図はｐ型の半導体層の原子密度と短絡電流との関
係を示すグラフであり、横軸に原子密度（×1022cm-3）
を、また縦軸に短絡電流（mA/cm2）をとって示してあ
る。
このグラフから明らかな如く0.5〜4.5×1022cm-3、望
ましくは1.0〜4.0×1022cm-3で短絡電流の大幅な向上が
図れることが解る。なお原子密度が5.0×1022cm-3以下
になると入射光量が増大しても光起電力特性の上昇は望
めない。
このように、本実施例の光起電力装置において変換効
率が向上した理由は次のように推察される。即ち、本実
施例においては、ｐ型半導体層を、ｉ型半導体層よりも
原子密度が小さく、且つ水素を除いた原子密度が0.5〜
4.5×1022cm-3、望ましくは1.0〜4.0×1022cm-3である
非晶質シリコンから構成している。前述した通り、通常
の非晶質シリコンの水素を除いた原子密度は5.0×1022c
m-3であるので、本実施例における上記ｐ型半導体層
は、通常よりも原子密度が小さい非晶質シリコンから構
成されることとなる。従って、シリコン原子による光の
総吸収量が低減できるため、従来のように光学的禁止帯
幅を広げたことによる電気的特性の低下が生じることが
ないので、他の特性を低下させることなく短絡電流の向
上を図ることが可能となったものと推察される。
〔実施例２〕
第３図は本発明の他の実施例を示す断面構造図であ
り、導電型がｎ型の半導体層15を低原子密度化し、他の
ｐ型半導体層３、ｉ型半導体層４を含む他の層の原子密
度下は６図に示す従来装置と同じとした。なおｎ型の半
導体層15は非晶質シリコンからなり、その原子密度は3.
8×1022cm-3である。各半導体層の形成条件は表４に示
すとおりである。
このように実施例における電気的特性は表５に示すと
おりである。なお電極面積は1cm2である。
表５から明らかな如くｎ型の半導体層を低原子密度化
することによっても電気的特性の向上を図ることは可能
である。
なお、ｎ型の半導体層の原子密度と短絡電流との関係
については具体的には示していないが第２図に示す如く
ｐ型の半導体層の原子密度と短絡電流との関係と略同様
の関係が認められた。
ただこのｎ型の半導体層は光入射側から離れて位置す
るためその効果は実施例１に比較して若干小さい。
〔実施例３〕
第４図は本発明の更に他の実施例を示す断面構造図で
あり、電導型がｐ型とｎ型との各半導体層を共に低原子
密度化した非晶質シリコンとして作製した。ｐ型低原子
密度半導体層13は第１図に示す〔実施例１〕のｐ型の半
導体層13と、またｎ型低原子密度半導体層15は第３図に
示す〔実施例２〕のｎ型の半導体層15と夫々形成条件及
び原子密度は実質的に同じである。
このような本発明の実施例３におけるその電気特性は
表６に示すとおりである。なお参照のため従来装置につ
いての電気的特性も併記してある。
〔実施例４〕
第５図は本発明の更に他の実施例を示す断面構造図で
あり、第４図に示す〔実施例３〕と同様にｐ型の半導体
層13とｎ型の半導体層15を夫々低原子密度化した非晶質
シリコンとすると共に、このｐ型低原子密度半導体層13
と透明導電層２との間に通常の原子密度を有するｐ型の
半導体層33を、またｎ型低原子密度半導体層25と裏面電
極層６との間にも通常の原子密度を有するｎ型の半導体
層35を夫々略100Åの厚さで介在せしめてある。
これはｐ型の半導体層23,n型の半導体層25を低原子密
度化することにより透明導電層2,裏面電極層６からIn,A
l等の拡散し易い金属がこれら半導体層内へ浸透するの
を防止するのを目的としたものであり、これによって熱
的安定性が高まることが確認された。
この実施例４の電気的特性は表７に示すとおりであ
る。なお、電極面積は1cm2である。
参考のため従来装置の電気的特性を併記してある。
実施例１〜３についても低原子密度層と透明導電層２
又は裏面電極層６との間には普通の原子密度を有するｐ
型又はｎ型の半導体層を介在させてもよいことは言うま
でもない。
〔効果〕
以上の如く本発明装置にあってはｉ型半導体層よりも
原子密度が小さく、且つ水素原子を除いた原子密度が0.
5〜4.5×1022cm-3、望ましくは1.0〜4.0×1022cm-3とす
ることで、通常よりも原子密度の小さい非晶質シリコン
からなる、光入射側に位置するｐ型及び／又はｎ型の半
導体等のドーピング層を有するから光学的禁制帯幅を広
くすることなく、高導電性を維持しつつ光吸収を低減出
来て電気的特性が向上するなど本発明は優れた効果を奏
するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention makes it possible to reduce the light absorption of a doping layer such as a p-type or n-type semiconductor layer without widening the optical band gap. It relates to a photovoltaic device. [Prior Art] Generally, in a photovoltaic device such as a solar cell, as a method of increasing the amount of light incident on the photoactive layer and increasing the photovoltaic current, a doping layer such as a p-type or n-type semiconductor layer located on the light incident side is used. The optical bandgap of Al2O3 has been widened to reduce the optical absorption in the doping layer (APPL.Phys.Lett39 (3), 2
37 pages 1 August 1981). FIG. 6 is a cross-sectional structural view showing a conventional photovoltaic device made of an amorphous semiconductor, which includes a transparent conductive layer 2, a p-type semiconductor layer 3, and an i-type on a transparent insulating substrate 1 made of glass. The semiconductor layer 4, the n-type semiconductor layer 5, and the back electrode layer 6 are laminated in this order. Table 1 shows an example of the forming conditions of such a conventional device. [Problems to be Solved by the Invention] However, in such a conventional method, when the optical band gap is widened, it is difficult to obtain a high conductive film by doping, and there is a problem that the deterioration of the electrical characteristics cannot be avoided. The present invention has been made in view of the above circumstances, and an object thereof is to reduce light absorption by the doping layer and improve electrical characteristics without impairing the high conductivity of the doping layer. In order to provide a photovoltaic device. [Means for Solving the Problems] In the photovoltaic device according to the present invention, at least one of the p-type and n-type semiconductor layers has a smaller atomic density than the i-type semiconductor layer and contains hydrogen atoms. Excluded atomic density is 0.5 ~
It is characterized by being made of amorphous silicon having a size of 4.5 × 10 22 cm -3 . [Function] In the device of the present invention, this can reduce light absorption in this layer without impairing the conductivity of the doping layer itself. Example 1 The present invention will be specifically described below with reference to the drawings showing an example thereof. FIG. 1 is a cross-sectional structural view showing a photovoltaic device according to the present invention (hereinafter referred to as the device of the present invention), in which 1 is a transparent insulating substrate made of glass and 2 is a transparent conductive layer. After the transparent conductive layer 2 is formed on the translucent insulating substrate 1, a semiconductor layer made of amorphous silicon whose conductivity type is p type and whose atomic density is lower than usual (hereinafter referred to as p type low atomic density semiconductor). Layer 13), a semiconductor layer 4 having a conductivity type of i-type, which is a photoactive layer similar to the conventional one, a semiconductor layer 5 having a conductivity type of the n-type similar to the conventional one, and a back electrode layer 6 are laminated in this order. Is configured. The p-type low atomic density semiconductor layer 13 is formed by the reactive sputtering method in a hydrogen atmosphere, and the semiconductor layers other than this layer 4,
5 is formed using a capacitively coupled glow discharge. When glow discharge is used, silane (SiH 4 ), methane (CH 4 ), and diborane (B
2 H 6 ) is used as a raw material, silane is used as a raw material for forming the i-type semiconductor layer, and silane and phosphine (PH 3 ) are used as raw materials for forming the n-type semiconductor layer 5. As a target for reactive sputtering, C-Si doped with 10 18 cm -3 B or C-Si doped with 10 18 cm -3 P is used. Other conditions for forming the p-type low atom density semiconductor layer 13, the i-type semiconductor layer 4, and the n-type semiconductor layer 5 are as shown in Table 2. A case where a glass plate is used as the substrate and the p-type semiconductor layer side is the light incident side will be described. Incidentally, the p-type low atomic density semiconductor layer 13 has an atomic density excluding hydrogen of 3.9 × 10 22 cm -3 , and the i-type semiconductor layer 4 of ordinary amorphous silicon has an atomic density of 5.0 × 10 22 c excluding hydrogen.
m -3 , the atomic density of the n-type semiconductor layer 5 excluding hydrogen is 5.0 × 10 22
cm -3 . Therefore, the p-type low atomic density semiconductor layer is
It is made of amorphous silicon whose atomic density is lower than that of the i-type semiconductor layer and whose atomic density is lower than usual. The electrical characteristics in Example 1 of the present invention are as shown in Table 3. The electrode area is 1 cm 2 . The conventional example is manufactured under the conditions shown in Table 1. As is clear from Table 3, a significant improvement in falling current and conversion efficiency is recognized. FIG. 2 is a graph showing the relationship between the atomic density of the p-type semiconductor layer and the short circuit current, with the horizontal axis representing the atomic density (× 10 22 cm -3 ).
And the vertical axis represents the short-circuit current (mA / cm 2 ). As is clear from this graph, it is understood that the short-circuit current can be greatly improved at 0.5 to 4.5 × 10 22 cm -3 , preferably 1.0 to 4.0 × 10 22 cm -3 . If the atomic density is 5.0 × 10 22 cm -3 or less, the photovoltaic characteristics cannot be expected to increase even if the amount of incident light increases. The reason why the conversion efficiency is improved in the photovoltaic device of this embodiment is presumed as follows. That is, in this embodiment, the p-type semiconductor layer has a smaller atomic density than the i-type semiconductor layer, and the atomic density excluding hydrogen is 0.5 to 0.5.
It is composed of amorphous silicon having a size of 4.5 × 10 22 cm -3 , preferably 1.0 to 4.0 × 10 22 cm -3 . As mentioned above, the atomic density of ordinary amorphous silicon excluding hydrogen is 5.0 × 10 22 c.
Since it is m −3 , the p-type semiconductor layer in this example is made of amorphous silicon having a smaller atomic density than usual. Therefore, since the total amount of light absorbed by silicon atoms can be reduced, there is no reduction in the electrical characteristics due to the widening of the optical bandgap unlike in the conventional case. It is presumed that it was possible to improve the current. [Embodiment 2] FIG. 3 is a cross-sectional structural view showing another embodiment of the present invention, in which the semiconductor layer 15 having an n-type conductivity is made to have a low atomic density, and another p-type semiconductor layer 3 and an i-type semiconductor are formed. The atomic densities of the other layers including the layer 4 were the same as those of the conventional device shown in FIG. The n-type semiconductor layer 15 is made of amorphous silicon and has an atomic density of 3.
It is 8 × 10 22 cm -3 . The conditions for forming each semiconductor layer are as shown in Table 4. Thus, the electrical characteristics in the examples are as shown in Table 5. The electrode area is 1 cm 2 . As is clear from Table 5, the electrical characteristics can be improved by reducing the atomic density of the n-type semiconductor layer. The relationship between the atomic density of the n-type semiconductor layer and the short-circuit current is not specifically shown, but as shown in FIG. 2, it is substantially the same as the relationship between the atomic density of the p-type semiconductor layer and the short-circuit current. Relationship was recognized. However, since this n-type semiconductor layer is located away from the light incident side, its effect is slightly smaller than that of the first embodiment. [Embodiment 3] FIG. 4 is a cross-sectional structural view showing still another embodiment of the present invention, in which p-type and n-type semiconductor layers of the conductivity type are both made to be low atomic density amorphous silicon. It was made. The p-type low atomic density semiconductor layer 13 is the p-type semiconductor layer 13 of [embodiment 1] shown in FIG. 1, and the n-type low atomic density semiconductor layer 15 is the n of [embodiment 2] shown in FIG. The formation conditions and the atom density are substantially the same as those of the semiconductor layer 15 of the mold. Table 6 shows the electrical characteristics of the third embodiment of the present invention. For reference, the electrical characteristics of the conventional device are also shown. [Embodiment 4] FIG. 5 is a sectional structural view showing still another embodiment of the present invention. Similar to [Embodiment 3] shown in FIG. 4, a p-type semiconductor layer 13 and an n-type semiconductor layer 13 are provided. Each of the p-type low atomic density semiconductor layers 13 is formed by using 15 as a low atomic density amorphous silicon.
Between the transparent conductive layer 2 and the transparent conductive layer 2, a p-type semiconductor layer 33 having a normal atomic density, and between the n-type low atomic density semiconductor layer 25 and the back electrode layer 6 are also an n-type having a normal atomic density. The semiconductor layers 35 of the above are respectively interposed with a thickness of approximately 100Å. This is because the p-type semiconductor layer 23 and the n-type semiconductor layer 25 are made to have a low atomic density, so that the In, A
It was confirmed that the purpose is to prevent a metal such as l that easily diffuses from penetrating into these semiconductor layers, and that this improves thermal stability. The electrical characteristics of this Example 4 are as shown in Table 7. The electrode area is 1 cm 2 . For reference, the electrical characteristics of the conventional device are also shown. Also in Examples 1 to 3, the low atomic density layer and the transparent conductive layer 2
Alternatively, p having a normal atomic density between the back electrode layer 6 and
It goes without saying that a type or n-type semiconductor layer may be interposed. [Effect] As described above, in the device of the present invention, the atomic density is smaller than that of the i-type semiconductor layer, and the atomic density excluding hydrogen atoms is 0.
By setting it to 5 to 4.5 × 10 22 cm -3 , preferably 1.0 to 4.0 × 10 22 cm -3 , p-type and / Alternatively, since the present invention has a doping layer of an n-type semiconductor or the like, the present invention has excellent effects such that light absorption can be reduced while maintaining high conductivity and electrical characteristics are improved without widening the optical band gap. It plays.
【図面の簡単な説明】
第１図は本発明の実施例１の断面構造図、第２図はｐ型
の半導体層の原子密度と短絡電流との関係を示すグラ
フ、第３図は本発明の実施例２の断面構造図、第４図は
本発明の実施例３の断面構造図、第５図は本発明の実施
例４の断面構造図、第６図は従来装置の断面構造図であ
る。
１……透光性絶縁基板、２……透明導電層
３……ｐ型の半導体層
４……ｉ型の半導体層、５……ｎ型の半導体層
６……裏面電極層、13……低原子密度化したｐ型の半導
体層、15……低原子密度化したｎ型の半導体層
23……低原子密度化したｐ型の半導体層
25……低原子密度化したｎ型の半導体層
33……通常の原子密度を有するｐ型の半導体層
35……通常の原子密度を有するｎ型の半導体層BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional structural view of Embodiment 1 of the present invention, FIG. 2 is a graph showing the relationship between the atomic density of a p-type semiconductor layer and a short circuit current, and FIG. 3 is the present invention. FIG. 4 is a sectional structural view of Embodiment 3 of the present invention, FIG. 5 is a sectional structural view of Embodiment 4 of the present invention, and FIG. 6 is a sectional structural view of a conventional device. is there. DESCRIPTION OF SYMBOLS 1 ... Translucent insulating substrate, 2 ... Transparent conductive layer 3 ... P-type semiconductor layer 4 ... i-type semiconductor layer, 5 ... N-type semiconductor layer 6 ... Back electrode layer, 13 ... P-type semiconductor layer with low atomic density, 15 ... n-type semiconductor layer with low atomic density 23 ... p-type semiconductor layer with low atomic density 25 ... n-type semiconductor layer with low atomic density 33 ... p-type semiconductor layer having normal atom density 35 ... n-type semiconductor layer having normal atom density
Claims (1)
置において、ｐ型又はｎ型半導体層の少なくとも一層
が、ｉ型半導体層よりも原子密度が小さく、且つ水素原
子を除いた原子密度が0.5〜4.5×1022cm-3である非晶質
シリコンからなることを特徴とする光起電力装置。 ２．前記ｐ型又はｎ型半導体層の少なくとも一層の水素
原子を除いた原子密度は1.0〜4.0×1022cm-3である特許
請求の範囲第１項記載の光起電力装置。 ３．前記ｐ型又はｎ型半導体層と電流取出し用電極との
間に前記ｐ型又はｎ型半導体層の原子密度よりも高い原
子密度を有するｐ型又はｎ型半導体層が介在する特許請
求の範囲第１項記載の光起電力装置。(57) [Claims] In a photovoltaic device having a pin-type or nip-type semiconductor layer, at least one of the p-type or n-type semiconductor layers has an atomic density lower than that of the i-type semiconductor layer and an atomic density excluding hydrogen atoms of 0.5. A photovoltaic device, characterized by comprising amorphous silicon having a size of 4.5 × 10 22 cm -3 . 2. The photovoltaic device according to claim 1, wherein an atomic density of at least one layer of the p-type or n-type semiconductor layer excluding hydrogen atoms is 1.0 to 4.0 × 10 22 cm −3 . 3. A p-type or n-type semiconductor layer having an atomic density higher than that of the p-type or n-type semiconductor layer is interposed between the p-type or n-type semiconductor layer and the current extraction electrode. The photovoltaic device according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62283471A JP2680583B2 (en) | 1987-11-10 | 1987-11-10 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62283471A JP2680583B2 (en) | 1987-11-10 | 1987-11-10 | Photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01125874A JPH01125874A (en) | 1989-05-18 |
| JP2680583B2 true JP2680583B2 (en) | 1997-11-19 |
Family
ID=17665977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62283471A Expired - Lifetime JP2680583B2 (en) | 1987-11-10 | 1987-11-10 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2680583B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60246682A (en) * | 1984-05-22 | 1985-12-06 | Hitachi Maxell Ltd | Photoelectric conversion element and manufacture thereof |
-
1987
- 1987-11-10 JP JP62283471A patent/JP2680583B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01125874A (en) | 1989-05-18 |
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