JPS62113482A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS62113482A JPS62113482A JP60254576A JP25457685A JPS62113482A JP S62113482 A JPS62113482 A JP S62113482A JP 60254576 A JP60254576 A JP 60254576A JP 25457685 A JP25457685 A JP 25457685A JP S62113482 A JPS62113482 A JP S62113482A
- Authority
- JP
- Japan
- Prior art keywords
- type
- amorphous silicon
- silicon carbide
- semiconductor layer
- amorphous semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 18
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000002994 raw material Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 25
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 5
- 238000001782 photodegradation Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 3
- AQRLNPVMDITEJU-UHFFFAOYSA-N triethylsilane Substances CC[SiH](CC)CC AQRLNPVMDITEJU-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- QXTIBZLKQPJVII-UHFFFAOYSA-N triethylsilicon Chemical compound CC[Si](CC)CC QXTIBZLKQPJVII-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
- H01L31/204—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table including AIVBIV alloys, e.g. SiGe, SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は非晶質シリコンカーバイド層を用いた光起電力
装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photovoltaic device using an amorphous silicon carbide layer.
一般に太陽電池、光センサ、ＴＰＴ等には非晶質シリコ
ンが広く用いられている。例えば太陽電池についてみる
と、ガラス等の透光性絶縁基板の主面に透明電極を形成
し、この透ｒｙＪ電極上に伝導型がｐ型、ｉ型、ｎ型の
各非晶質半導体からなる光活性層を形成し、更にこの表
面に裏面電極を形成して構成され、透光性絶縁基板、透
明電極を通して非晶質半導体層内に光を導入し、生起せ
しめた光起電力を透明電極、裏面電極を通じて外部に取
り出すようになっている。Generally, amorphous silicon is widely used for solar cells, optical sensors, TPT, etc. For example, in solar cells, a transparent electrode is formed on the main surface of a transparent insulating substrate such as glass, and amorphous semiconductors of p-type, i-type, and n-type conductivity are formed on this transparent RYJ electrode. A photoactive layer is formed, and a back electrode is formed on the surface of the photoactive layer. , and is taken out to the outside through the back electrode.
ところで前記非晶質半導体層における光入射側の非晶質
半導体層である例えばｐ型非晶質半導体層はこれに対す
る光の採り込みを容易にするためのワイドバンドギャッ
プ材料として従来非晶質シリコンカーバイドが広く使用
されているが、その非晶質シリコンカーバイドの形成の
ための原料ガスとしては通常Ｓｉ Ｈ４，５ｉ２１１６
，５ｉＪｓ等と、Ｃ１１，。By the way, the amorphous semiconductor layer on the light incident side of the amorphous semiconductor layer, for example, the p-type amorphous semiconductor layer, is conventionally made of amorphous silicon as a wide bandgap material to facilitate the absorption of light into the p-type amorphous semiconductor layer. Although carbide is widely used, the source gas for the formation of amorphous silicon carbide is usually Si H4,5i2116
,5iJs et al., and C11,.
Ｃ２１１２、Ｃ２１１５等との混合ガスが用いられてい
る（特開昭５７−１０３３１１号）。A mixed gas with C2112, C2115, etc. is used (JP-A-57-103311).
しかしこれらの混合ガスはその分解に比較的高いパワー
（ＲＦパワー５０Ｗ程度）を必要とし、低いパワーでは
十分な分解が出来ないためプラズマＣｖＤ法にて成膜を
行う過程で基板に形成しである透明電極表面に対するプ
ラズマの衝撃が大きく、透明電極の構成元素であるＩｎ
＋ Ｓｎが成膜中のｐ型非晶質半導体層中に拡散し、膜
質を低下させるという問題があった。However, these mixed gases require relatively high power (RF power of about 50 W) to decompose, and low power cannot sufficiently decompose them, so they are not formed on the substrate during film formation using the plasma CVD method. The impact of the plasma on the surface of the transparent electrode is large, and the In
+ There was a problem in that Sn diffused into the p-type amorphous semiconductor layer during film formation and deteriorated the film quality.
本発明はかかる事情に鑑みなされたものであって、その
目的とするところは低パワーで分解が可能な一般式（Ｃ
ｖＨｗ）ｘ ５ｉｙＨｚで表わされる物質を原料ガスに
用いることによって、不純物の拡散を大幅に低減し得て
、膜質の向上が図れ、しかもＣ２５ｉを共に含む〆めに
従来はＳｉＨ４等と０１１４等とを混合して用いたが単
一種の物質のみで足りることとなって設備の簡略化もは
かれるようにした光起電力装置を提供するにある。The present invention was made in view of the above circumstances, and its purpose is to decompose the general formula (C
By using a material expressed by vHw) It is an object of the present invention to provide a photovoltaic device in which a mixture of materials is used, but only a single kind of material is required, and the equipment can be simplified.
本発明に係る光起電力装置は、光活性層中に非晶質シリ
コンカーバイド層を含む光起電力装置において、前記非
晶質シリコンカーバイド層は原料ガスとして一般式（Ｃ
ｖＨｗ）ｘｓｉｙＨｚ （ｖ−ｚは零を含む任意数）
で表わされるガスを用いて形成されたことを特徴とする
。The photovoltaic device according to the present invention includes an amorphous silicon carbide layer in the photoactive layer, wherein the amorphous silicon carbide layer is used as a raw material gas of the general formula (C
vHw) xsiyHz (v-z is any number including zero)
It is characterized by being formed using a gas represented by
以下本発明をその実施例を示す図面に基づき具体的に説
明する。第１図は本発明に係る半導体装置（以下本発明
装置という）の縦断面構造図であり、図中１はガラス等
を用いて構成した透光性絶縁基板、２はＩＴＯ等を用い
て構成した透明電極、３は伝導型がｐ型の非晶質半導体
層、４は同じくｉ型の非晶質半導体層、５は同じくｎ型
の非晶質半導体層、６はＡ１等を用いて構成した裏面電
極を示している。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on drawings showing embodiments thereof. FIG. 1 is a vertical cross-sectional structural diagram of a semiconductor device according to the present invention (hereinafter referred to as the device of the present invention), in which 1 is a transparent insulating substrate made of glass or the like, and 2 is a transparent insulating substrate made of ITO or the like. 3 is an amorphous semiconductor layer of p-type conductivity, 4 is an i-type amorphous semiconductor layer, 5 is an n-type amorphous semiconductor layer, 6 is composed of A1, etc. The back electrode is shown.
透光性絶縁基板１はその主面上に透明電極２、ｐ型、ｉ
型、ｎ型の各非晶質半導体層３，４，５、裏面電極６を
この順序にｆ＃層形成せしめられている。ｐ型非晶質半
導体層３は非晶質シリコンカーバイドを、またｉ型、ｎ
型の各非晶質半導体層４゜５は非晶質シリコンを夫々用
いて形成されている。A transparent insulating substrate 1 has transparent electrodes 2, p-type, i
The f# layer is formed of the amorphous semiconductor layers 3, 4, 5, and the back electrode 6 in this order. The p-type amorphous semiconductor layer 3 is made of amorphous silicon carbide, as well as i-type, n-type
Each amorphous semiconductor layer 4.5 of the mold is formed using amorphous silicon.
ｐ型非晶質半導体層３はプラズマＣＶＤ法にて原料ガス
である（Ｃ２Ｈ５）３Ｓｉ Ｈ＋Ｂ２Ｈ６を分解して基
ＦｉＳ表面に非晶質シリコンカーバイドを革着形成せし
めである。１２Ｆパワーとしては５Ｗ程度で十分である
。The p-type amorphous semiconductor layer 3 is formed by decomposing (C2H5)3SiH+B2H6, which is a raw material gas, by a plasma CVD method to form amorphous silicon carbide on the surface of the base FiS. Approximately 5 W is sufficient as the 12F power.
なお、ワイドバンドギャップ材料としてはトリエチルシ
ラン（Ｃ２Ｈｓ）３ＳｉＨに限らず、テトラエチルシラ
ン（Ｃ２Ｈｓ）４Ｓｉ、モノメチルシラン（ＣＨ３）Ｓ
＋ Ｈ］ ｌ ジメチルシラン（ＣＩ＋３）：Ｓｉ
Ｈ２、テトラメチルシラン（ＣＨ３）４Ｓｉ等を用いて
もよく、一般式％式％）
で表わされる物質であればよい。Note that the wide bandgap material is not limited to triethylsilane (C2Hs)3SiH, but also tetraethylsilane (C2Hs)4Si, monomethylsilane (CH3)S
+ H] l dimethylsilane (CI+3):Si
H2, tetramethylsilane (CH3)4Si, etc. may be used, and any substance represented by the general formula % may be used.
ただ現在市場で得られるこれらのガスの純度は表１に示
す如くであり、不純物の少ない（Ｃ２Ｈ５） ３ＳｉＨ
。However, the purity of these gases currently available on the market is as shown in Table 1.
.
（Ｃ２Ｈ５） ４ Ｓｉ等が望ましい。(C2H5)4Si etc. are desirable.
表 １
透明電極２、ｉ型、ｎ型非晶質半導体層４．５及び裏面
電極６等の形成条件、原料ガス等は従来の方法をそのま
ま通用すればよい。Table 1 The conditions for forming the transparent electrode 2, the i-type and n-type amorphous semiconductor layers 4.5, the back electrode 6, and the like, as well as the raw material gas, may be determined by conventional methods.
第２図（イ）〜（ホ）はｐ型非晶質半導体層の原料ガス
として（Ｃ２Ｈ５） ３Ｓｉｌｌ ＋Ｂ２１１６を用い
た本発明装置と同じくｐ型非晶質半導体層の原料ガスと
してＳｉＨ４＋Ｃ■４ ＋Ｂ２Ｈｒ、を用いた従来装置
との光劣化特性についての比較試験結果を示すグラフで
あり、横軸にはいずれも時間（時）を、また縦軸には夫
々光劣化率（％）、変換効率η（％）、開放電圧Ｖｏｃ
（Ｖ） 、短絡電流ｒｓｃ （ｍＡ） ＋ 曲線因子
ＦＦをとって示しである。グラフ中黒光でプロットした
のは本発明装置の、また白丸でプロットしたのは従来装
置の結果を示している。Figures 2 (a) to (e) show SiH4 + C4 + B2Hr as the raw material gas for the p-type amorphous semiconductor layer, similar to the device of the present invention using (C2H5) 3Sill +B2116 as the raw material gas for the p-type amorphous semiconductor layer. This is a graph showing the results of a comparative test on photodegradation characteristics with a conventional device using (%), open circuit voltage Voc
(V), short circuit current rsc (mA) + fill factor FF. In the graph, the black light plots indicate the results of the device of the present invention, and the white circles plot the results of the conventional device.
これらのグラフから明らかなように上記した光劣化率、
変換効率、開放電圧、短絡電流２曲線因子のいずれにつ
いても本発明装置は優れた結果を示しているが、特に−
変換効率、光劣化率においての向上が顕著であることが
解る。As is clear from these graphs, the above photodegradation rate,
The device of the present invention shows excellent results in terms of conversion efficiency, open circuit voltage, and short circuit current 2 fill factors, but especially -
It can be seen that the conversion efficiency and photodegradation rate are significantly improved.
なお、上述の実施例にあっては光の入射側に位置するｐ
型非晶質半導体層の形成にテトラエチルシラン等の原料
ガスを用いる場合につき説明したが、何らこれらに限る
ものではなく、ｎ−１−ｐ接合型の場合にはｎ型非晶質
半導体層の形成に同様の原料ガスを用い得ることは勿論
である。Note that in the above embodiment, p located on the light incident side
Although the case where raw material gas such as tetraethylsilane is used to form an n-type amorphous semiconductor layer has been described, it is not limited to these in any way. Of course, similar source gases can be used for formation.
以上の如く本発明装置にあっては、非晶質シリコンカー
バイド層を（Ｃν）１ｗ）ｘ ５ｉｙｔｌｚを原料ガス
に用いて形成したから、小さいパワーでその分解を行う
ことが出来て他層からの不純物の拡散を格段に低減出来
、膜品質が向上し、光電変換特性、光劣化特性の大幅な
向上を図れるなど、本発明は優れた効果を奏するもので
ある。As described above, in the device of the present invention, since the amorphous silicon carbide layer is formed using (Cν)1w) The present invention has excellent effects such as significantly reducing impurity diffusion, improving film quality, and greatly improving photoelectric conversion characteristics and photodegradation characteristics.
第１図は本発明装置の断面構造図、第２図（イ）〜（ホ
）は本発明装置と従来装置との光劣化特性を比較して示
すグラフである。
１・・・透光性絶縁基板 ２・・・透明電極 ３・・・
ｐ型非晶質半導体層 ４・・・ｉ型非晶質半導体層５・
・・ｎ型非晶質半導体層 ６・・・裏面電極耳 １ 図FIG. 1 is a cross-sectional structural diagram of the device of the present invention, and FIGS. 2(a) to (e) are graphs comparing the photodegradation characteristics of the device of the present invention and a conventional device. 1... Transparent insulating substrate 2... Transparent electrode 3...
P-type amorphous semiconductor layer 4...I-type amorphous semiconductor layer 5...
...N-type amorphous semiconductor layer 6...Back electrode lug 1 Figure
Claims (1)
起電力装置において、前記非晶質シリコンカーバイド層
は原料ガスとして一般式（Ｃ＿ＶＨ＿Ｗ）＿ＸＳｉ＿Ｙ
Ｈ＿Ｚ（Ｖ〜Ｚは零を含む任意数）で表わされるガスを
用いて形成されたことを特徴とする光起電力装置。 ２、前記原料ガスは（Ｃ＿２Ｈ＿５）＿３ＳｉＨ、又は
（Ｃ＿２Ｈ＿５）＿４Ｓｉである特許請求の範囲第１項
記載の光起電力装置。[Claims] 1. In a photovoltaic device including an amorphous silicon carbide layer in a photoactive layer, the amorphous silicon carbide layer has the general formula (C_VH_W)_XSi_Y as a raw material gas.
A photovoltaic device formed using a gas represented by H_Z (V to Z are arbitrary numbers including zero). 2. The photovoltaic device according to claim 1, wherein the source gas is (C_2H_5)_3SiH or (C_2H_5)_4Si.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60254576A JPS62113482A (en) | 1985-11-12 | 1985-11-12 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60254576A JPS62113482A (en) | 1985-11-12 | 1985-11-12 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62113482A true JPS62113482A (en) | 1987-05-25 |
Family
ID=17266959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60254576A Pending JPS62113482A (en) | 1985-11-12 | 1985-11-12 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62113482A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5445992A (en) * | 1993-05-10 | 1995-08-29 | Canon Kabushiki Kaisha | Process for forming a silicon carbide film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5892217A (en) * | 1981-11-28 | 1983-06-01 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
| JPS59165468A (en) * | 1983-03-10 | 1984-09-18 | Shin Etsu Chem Co Ltd | Manufacture of window frame material for solar battery |
-
1985
- 1985-11-12 JP JP60254576A patent/JPS62113482A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5892217A (en) * | 1981-11-28 | 1983-06-01 | Semiconductor Energy Lab Co Ltd | Manufacture of semiconductor device |
| JPS59165468A (en) * | 1983-03-10 | 1984-09-18 | Shin Etsu Chem Co Ltd | Manufacture of window frame material for solar battery |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5445992A (en) * | 1993-05-10 | 1995-08-29 | Canon Kabushiki Kaisha | Process for forming a silicon carbide film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2740284B2 (en) | Photovoltaic element | |
| JPS6239550B2 (en) | ||
| JPS6249672A (en) | Amorphous photovoltaic element | |
| JPS5513938A (en) | Photoelectronic conversion semiconductor device and its manufacturing method | |
| JPH04130671A (en) | Photovoltaic device | |
| JPS6233479A (en) | Solar cell | |
| JPS62234379A (en) | Semiconductor device | |
| JPS61222277A (en) | Photovoltaic device and manufacture thereof | |
| JPH0658970B2 (en) | Semiconductor device | |
| JPS62113482A (en) | Photovoltaic device | |
| JP2003188400A (en) | Crystalline silicon carbide film and manufacturing method thereof, and solar cell | |
| JPS62209871A (en) | Manufacture of photovoltaic device | |
| JPH0346377A (en) | Solar cell | |
| JPH05275725A (en) | Photovoltaic device and its manufacture | |
| JPS61135167A (en) | Thin-film solar cell | |
| JPS62159475A (en) | Amorphous silicon solar cell | |
| JPH0685291A (en) | Semiconductor device and its manufacture | |
| JPH02219284A (en) | Manufacture of amorphous solar cell | |
| JPS59101879A (en) | Thin film solar battery | |
| JPS5952883A (en) | Solar battery | |
| JPH0554692B2 (en) | ||
| JPH01194370A (en) | Optical power generation device | |
| JPS62165374A (en) | Amorphous photovoltaic element | |
| KR100368737B1 (en) | Amorphous silicon solar cell having fine crystalline silicon layer containing chlorine and method for manufacturing the same | |
| JPS6193675A (en) | Manufacture of photovoltaic device |