JPS5892217A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5892217A
JPS5892217A JP56191267A JP19126781A JPS5892217A JP S5892217 A JPS5892217 A JP S5892217A JP 56191267 A JP56191267 A JP 56191267A JP 19126781 A JP19126781 A JP 19126781A JP S5892217 A JPS5892217 A JP S5892217A
Authority
JP
Japan
Prior art keywords
type
reaction
layers
semiconductor
cf4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56191267A
Other versions
JPH0341978B2 (en
Inventor
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Priority to JP56191267A priority Critical patent/JPH0341978B2/ja
Publication of JPS5892217A publication Critical patent/JPS5892217A/en
Publication of JPH0341978B2 publication Critical patent/JPH0341978B2/ja
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To previously form an intrinsic or a practically intrinsic semiconductor layers, for example, non-single crystalline silicon, on the surfaces of a P type and N type semiconductor layer by a method wherein the discrharge of an impurity from the internal wall of a reaction furnace is prevented when semiconductor devices having the P type and the N type semiconductor layers are continuously made by a plasma vapor method by using the same reaction tank. CONSTITUTION:A reactive gas is flowed in a reaction furnace 25 providing with electrodes 9, 10 for supplying electromagnetic energy applying plasma to the reactive gas and with a heating device 9 formed by surrounding a reaction cylinder and the electrodes. P type layers, I type layers, and N type layers are formed on a substrate 1 by stacking the layers in the order of PIN and by closely contacting each other. Furthermore, after that, the possibility of alternately mixing a P or an N type impurity during the process between the final stage for the manufacture of the previous semiconductor device and the final stage at the next process by coating the I type semiconductor layer to the reaction system of the reaction furnace. When a reaction product deposited to the reaction cylinder 25 or the internal wall or the surface of a holder 2 is removed, CF4 or CF4+O2 is introduced from 17 to apply electromagnetic energy for producing fluorine radical, and vapor etching may be executed.
JP56191267A 1981-11-28 1981-11-28 Expired - Lifetime JPH0341978B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56191267A JPH0341978B2 (en) 1981-11-28 1981-11-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56191267A JPH0341978B2 (en) 1981-11-28 1981-11-28

Publications (2)

Publication Number Publication Date
JPS5892217A true JPS5892217A (en) 1983-06-01
JPH0341978B2 JPH0341978B2 (en) 1991-06-25

Family

ID=16271694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56191267A Expired - Lifetime JPH0341978B2 (en) 1981-11-28 1981-11-28

Country Status (1)

Country Link
JP (1) JPH0341978B2 (en)

Cited By (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59165468A (en) * 1983-03-10 1984-09-18 Shin Etsu Chem Co Ltd Manufacture of window frame material for solar battery
JPS6085575A (en) * 1983-10-18 1985-05-15 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS60130821A (en) * 1983-12-19 1985-07-12 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS60130822A (en) * 1983-12-19 1985-07-12 Semiconductor Energy Lab Co Ltd Manufacture of light emitting semiconductor device
JPS60154521A (en) * 1984-01-23 1985-08-14 Semiconductor Energy Lab Co Ltd Manufacture of silicon carbide film
JPS62113482A (en) * 1985-11-12 1987-05-25 Sanyo Electric Co Ltd Photovoltaic device
US4845043A (en) * 1987-04-23 1989-07-04 Catalano Anthony W Method for fabricating photovoltaic device having improved short wavelength photoresponse
JPH01212478A (en) * 1988-02-19 1989-08-25 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
US5521400A (en) * 1982-08-24 1996-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device with low sodium concentration
US5543636A (en) * 1984-05-18 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor
US5599732A (en) * 1995-08-21 1997-02-04 Northwestern University Method for growing III-V semiconductor films using a coated reaction chamber
US5632821A (en) * 1995-03-03 1997-05-27 Anelva Corporation Post treatment method for in-situ cleaning
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US6020035A (en) * 1996-10-29 2000-02-01 Applied Materials, Inc. Film to tie up loose fluorine in the chamber after a clean process
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6121161A (en) * 1997-06-11 2000-09-19 Applied Materials, Inc. Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
US7109114B2 (en) 2004-05-07 2006-09-19 Applied Materials, Inc. HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
US7786482B2 (en) 2007-12-21 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Diode and display device including diode
US7808000B2 (en) 2007-10-05 2010-10-05 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor, and method for manufacturing the same
US7923730B2 (en) 2007-12-03 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and semiconductor device
US7994502B2 (en) 2007-12-03 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7998801B2 (en) 2008-04-25 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor having altered semiconductor layer
US8053294B2 (en) 2008-04-21 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film
US8106398B2 (en) 2007-10-23 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline semiconductor film, thin film transistor, and display device including thin film transistor
US8119468B2 (en) 2008-04-18 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
US8138032B2 (en) 2008-04-18 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor having microcrystalline semiconductor film
US8283667B2 (en) 2008-09-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8304775B2 (en) 2009-03-09 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8304779B2 (en) 2007-11-01 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, and display device having the thin film transistor
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
US8525170B2 (en) 2008-04-18 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US8546810B2 (en) 2009-05-28 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device, and electronic appliance
US8569120B2 (en) 2008-11-17 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor
US8624254B2 (en) 2010-09-14 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8637866B2 (en) 2008-06-27 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138237A (en) * 1979-04-13 1980-10-28 Fujitsu Ltd Manufacture of semiconductor device
JPS55154781A (en) * 1979-05-22 1980-12-02 Shunpei Yamazaki Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138237A (en) * 1979-04-13 1980-10-28 Fujitsu Ltd Manufacture of semiconductor device
JPS55154781A (en) * 1979-05-22 1980-12-02 Shunpei Yamazaki Semiconductor device

Cited By (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US5521400A (en) * 1982-08-24 1996-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device with low sodium concentration
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
JPH0572739B2 (en) * 1983-03-10 1993-10-12 Shinetsu Chem Ind Co
JPS59165468A (en) * 1983-03-10 1984-09-18 Shin Etsu Chem Co Ltd Manufacture of window frame material for solar battery
US6503771B1 (en) 1983-08-22 2003-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device
JPS6085575A (en) * 1983-10-18 1985-05-15 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPH0584052B2 (en) * 1983-12-19 1993-11-30 Handotai Energy Kenkyusho
JPS60130822A (en) * 1983-12-19 1985-07-12 Semiconductor Energy Lab Co Ltd Manufacture of light emitting semiconductor device
JPS60130821A (en) * 1983-12-19 1985-07-12 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS60154521A (en) * 1984-01-23 1985-08-14 Semiconductor Energy Lab Co Ltd Manufacture of silicon carbide film
US6635520B1 (en) 1984-05-18 2003-10-21 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
US5543636A (en) * 1984-05-18 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US5556794A (en) * 1985-05-07 1996-09-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having low sodium concentration
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
JPS62113482A (en) * 1985-11-12 1987-05-25 Sanyo Electric Co Ltd Photovoltaic device
US4845043A (en) * 1987-04-23 1989-07-04 Catalano Anthony W Method for fabricating photovoltaic device having improved short wavelength photoresponse
JPH01212478A (en) * 1988-02-19 1989-08-25 Semiconductor Energy Lab Co Ltd Photoelectric conversion device
US6011277A (en) * 1990-11-20 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5632821A (en) * 1995-03-03 1997-05-27 Anelva Corporation Post treatment method for in-situ cleaning
US5599732A (en) * 1995-08-21 1997-02-04 Northwestern University Method for growing III-V semiconductor films using a coated reaction chamber
US6223685B1 (en) 1996-10-29 2001-05-01 Applied Materials, Inc. Film to tie up loose fluorine in the chamber after a clean process
US6020035A (en) * 1996-10-29 2000-02-01 Applied Materials, Inc. Film to tie up loose fluorine in the chamber after a clean process
US6121161A (en) * 1997-06-11 2000-09-19 Applied Materials, Inc. Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions
US7109114B2 (en) 2004-05-07 2006-09-19 Applied Materials, Inc. HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
US8294155B2 (en) 2007-10-05 2012-10-23 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor, and method for manufacturing the same
US7808000B2 (en) 2007-10-05 2010-10-05 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor, and method for manufacturing the same
US7989332B2 (en) 2007-10-05 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor, and method for manufacturing the same
US8106398B2 (en) 2007-10-23 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline semiconductor film, thin film transistor, and display device including thin film transistor
US8304779B2 (en) 2007-11-01 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, and display device having the thin film transistor
US7923730B2 (en) 2007-12-03 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and semiconductor device
US7994502B2 (en) 2007-12-03 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8558236B2 (en) 2007-12-03 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8063403B2 (en) 2007-12-03 2011-11-22 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and semiconductor device
US7786482B2 (en) 2007-12-21 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Diode and display device including diode
US8119468B2 (en) 2008-04-18 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method for manufacturing the same
US8138032B2 (en) 2008-04-18 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor having microcrystalline semiconductor film
US8525170B2 (en) 2008-04-18 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US8053294B2 (en) 2008-04-21 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film
US7998801B2 (en) 2008-04-25 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor having altered semiconductor layer
US8637866B2 (en) 2008-06-27 2014-01-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8283667B2 (en) 2008-09-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8569120B2 (en) 2008-11-17 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor
US8604481B2 (en) 2009-03-09 2013-12-10 Semiconductor Energy Co., Ltd. Thin film transistor
US8304775B2 (en) 2009-03-09 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8546810B2 (en) 2009-05-28 2013-10-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device, and electronic appliance
US8624254B2 (en) 2010-09-14 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor

Also Published As

Publication number Publication date
JPH0341978B2 (en) 1991-06-25

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