JPS6027115A - 光照射炉による半導体ウエハ−の熱処理法 - Google Patents

光照射炉による半導体ウエハ−の熱処理法

Info

Publication number
JPS6027115A
JPS6027115A JP58134369A JP13436983A JPS6027115A JP S6027115 A JPS6027115 A JP S6027115A JP 58134369 A JP58134369 A JP 58134369A JP 13436983 A JP13436983 A JP 13436983A JP S6027115 A JPS6027115 A JP S6027115A
Authority
JP
Japan
Prior art keywords
wafer
circumference
heat treatment
light irradiation
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58134369A
Other languages
English (en)
Japanese (ja)
Other versions
JPH025295B2 (OSRAM
Inventor
Hiroshi Shimizu
洋 清水
Tetsuharu Arai
荒井　徹治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP58134369A priority Critical patent/JPS6027115A/ja
Publication of JPS6027115A publication Critical patent/JPS6027115A/ja
Publication of JPH025295B2 publication Critical patent/JPH025295B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P10/00—

Landscapes

  • Recrystallisation Techniques (AREA)
JP58134369A 1983-07-25 1983-07-25 光照射炉による半導体ウエハ−の熱処理法 Granted JPS6027115A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58134369A JPS6027115A (ja) 1983-07-25 1983-07-25 光照射炉による半導体ウエハ−の熱処理法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58134369A JPS6027115A (ja) 1983-07-25 1983-07-25 光照射炉による半導体ウエハ−の熱処理法

Publications (2)

Publication Number Publication Date
JPS6027115A true JPS6027115A (ja) 1985-02-12
JPH025295B2 JPH025295B2 (OSRAM) 1990-02-01

Family

ID=15126764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58134369A Granted JPS6027115A (ja) 1983-07-25 1983-07-25 光照射炉による半導体ウエハ−の熱処理法

Country Status (1)

Country Link
JP (1) JPS6027115A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02159720A (ja) * 1988-12-14 1990-06-19 Nec Corp 半導体装置の熱処理方法
WO1997033306A1 (fr) * 1996-03-07 1997-09-12 Shin-Etsu Handotai Co., Ltd. Procede de traitement thermique et substrat a semi-conducteur monocristal
JP2006179837A (ja) * 2004-12-24 2006-07-06 Fujitsu Ltd 半導体装置の製造方法、ウェハおよびウェハの製造方法
JP2014120664A (ja) * 2012-12-18 2014-06-30 Dainippon Screen Mfg Co Ltd 剥離補助方法および剥離補助装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169125A (ja) * 1983-03-16 1984-09-25 Ushio Inc 半導体ウエハ−の加熱方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59169125A (ja) * 1983-03-16 1984-09-25 Ushio Inc 半導体ウエハ−の加熱方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02159720A (ja) * 1988-12-14 1990-06-19 Nec Corp 半導体装置の熱処理方法
WO1997033306A1 (fr) * 1996-03-07 1997-09-12 Shin-Etsu Handotai Co., Ltd. Procede de traitement thermique et substrat a semi-conducteur monocristal
US5913974A (en) * 1996-03-07 1999-06-22 Shin-Etsu Handotai Co., Ltd. Heat treating method of a semiconductor single crystal substrate
JP2006179837A (ja) * 2004-12-24 2006-07-06 Fujitsu Ltd 半導体装置の製造方法、ウェハおよびウェハの製造方法
JP2014120664A (ja) * 2012-12-18 2014-06-30 Dainippon Screen Mfg Co Ltd 剥離補助方法および剥離補助装置

Also Published As

Publication number Publication date
JPH025295B2 (OSRAM) 1990-02-01

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