JPS60262476A - Light-emitting element - Google Patents

Light-emitting element

Info

Publication number
JPS60262476A
JPS60262476A JP59118426A JP11842684A JPS60262476A JP S60262476 A JPS60262476 A JP S60262476A JP 59118426 A JP59118426 A JP 59118426A JP 11842684 A JP11842684 A JP 11842684A JP S60262476 A JPS60262476 A JP S60262476A
Authority
JP
Japan
Prior art keywords
emitting element
light
substrate
frame
printed wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59118426A
Other languages
Japanese (ja)
Inventor
Hikoo Nakamura
中村　比古夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59118426A priority Critical patent/JPS60262476A/en
Publication of JPS60262476A publication Critical patent/JPS60262476A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE:To obtain a small-sized light-emitting element changed into a chip electrode by laminating a printed wiring substrate and a frame-shaped insulating substrate, incorporating a light-emitting element into the frame of the laminated substrates and sealing the light-emitting element by a resin. CONSTITUTION:Tungsten metallized through-hole electrodes 6 are formed to a ceramic substrate 5, and a frame-shaped ceramic substrate 7 is laminated onto the ceramic printed wiring substrate. The upper section of a surface wiring layer 8 in the substrate 5 is plated with a metal, and a light-emitting element 9 is formed onto the metallic plating through bonding. A high heat-resistant resin 10 having excellent adhesive properties to ceramics is injected into a space on the light-emitting element 9 and cured, thus obtaining a small-sized light-emitting diode element.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は電子機器の小型化、高信頼化２組立自動化に適
用し得る発光素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a light emitting element that can be applied to miniaturization, high reliability, and assembly automation of electronic equipment.

従来例の構成とその問題点 発光ダイオード（以下ＬＥＤと称する）は、第１図に示
すように、リードフレーム１にエポキシ樹脂２をトラン
スファー成型したものが量産されているが、これをチッ
プ電極化するには半田付時のリードフレーム−樹脂間の
熱膨張係数差による断線、形状による包装困難等の問題
がある。Conventional configuration and its problems Light emitting diodes (hereinafter referred to as LEDs) are mass-produced by transfer molding epoxy resin 2 onto a lead frame 1, as shown in Figure 1. However, there are problems such as wire breakage due to the difference in coefficient of thermal expansion between the lead frame and the resin during soldering, and difficulty in packaging due to the shape.

また第２図は従来のチップ電極されたＬＥＤの斜視図ａ
および断面図すであり、これはセラミックベースの印刷
配線基板３上にボンディングしたものに樹脂レンズ４を
形成した後、チップ部品として切り出したものであるが
これも同様の問題を持っている。Figure 2 is a perspective view of a conventional chip-electrode LED.
and a cross-sectional view, in which a resin lens 4 is formed on a ceramic-based printed wiring board 3 by bonding and then cut out as a chip component, but this also has the same problem.

発明の目的 本発明は信頼性かつ量産性にすぐれた小型のチップ電極
化された発光素子を提供するものである。OBJECTS OF THE INVENTION The present invention provides a small-sized chip-electrode light-emitting element that is highly reliable and mass-producible.

発明の構成 この目的を達成するために本発明の発光素子は、印刷配
線基板と枠状絶縁基板とを積層し、同積層基板の枠内部
に発光素子を組み込み、樹脂封止し、これにより、チッ
プ電極化された小型の発光素子を実現したものである。Structure of the Invention In order to achieve this object, the light emitting device of the present invention includes a printed circuit board and a frame-shaped insulating substrate that are laminated, the light emitting device is built into the frame of the laminated substrate, and the light emitting device is sealed with resin. This realizes a small light emitting element with chip electrodes.

実施例の説明 以下、本発明の実施例を第３図および第４図に示す。第
３図は積層前の構造図、第４図は完成品の断面図である
。DESCRIPTION OF THE EMBODIMENTS An embodiment of the present invention is shown in FIGS. 3 and 4 below. FIG. 3 is a structural diagram before lamination, and FIG. 4 is a sectional view of the finished product.

この実施例の基本構造は、ベースとなる印刷配線基板は
、第３図に示すように、セラ’Ｚツク基板５に、タング
ステンメタライズのスルーホール電極６を設け、そのセ
ラミック印刷配線基板上に枠状のセラミック基板７を、
漬層したものである。The basic structure of this embodiment is that, as shown in FIG. 3, the base printed wiring board is a ceramic printed wiring board 5 with through-hole electrodes 6 made of tungsten metallized, and a frame is placed on the ceramic printed wiring board 5. A ceramic substrate 7 of
It is pickled.

印刷配線基板５の表面の配線層８土には、Ｎｉ　および
ＡｕまたはＡｑのメッキを励し、このＪ：　Ｋ　。The wiring layer 8 on the surface of the printed wiring board 5 is plated with Ni and Au or Aq.

例えば、［７−Ｖ族化合物の発光素子９をボンディング
形成する。そして、内部電極間の結線は、周知のワイヤ
ーボンド技術で行なった後、セラミックと接着性のよい
高耐熱性の樹脂１ｏを注入硬化させれば本発明の小型発
光ダイオード素子が得られる。For example, [7-V group compound light emitting element 9 is formed by bonding. After the internal electrodes are connected by a well-known wire bonding technique, a highly heat-resistant resin 1o with good adhesion to ceramics is injected and hardened to obtain the small light emitting diode element of the present invention.

なお、説明の都合土ことまでは１個についてのみ記した
が、実際は、第５図に示すように多連状態で製造および
検査を行ない、ダイシングマシンにて、ダイシングライ
ン１１に沿って、個別チップに切断するものとする。し
たがって形状的（では角型となり取扱−の容易なチップ
部品が得られる。For convenience of explanation, only one chip has been described, but in reality, as shown in FIG. shall be cut into Therefore, a chip component having a square shape and easy to handle can be obtained.

発明の効果 本発明によれば、一枚のシート上に多数の発光素子を多
連化して形成し得るため、ボンディング。Advantages of the Invention According to the present invention, a large number of light emitting elements can be formed in multiple form on a single sheet, so bonding is not required.

樹脂注入、ならびに検査の自動化、量産化が容易であり
、品質の安定した低コストの小型発光ダイオード素子を
作ることができる。また、他のチップ型電子部品と同様
の角型形状であるためユーザーでの組立自動化に有効な
テーピング包装として提供することができる。It is easy to automate resin injection and inspection, and mass-produce it, making it possible to produce small-sized light-emitting diode elements with stable quality and low cost. Furthermore, since it has a square shape similar to other chip-type electronic components, it can be provided as taping packaging, which is effective for automating assembly by users.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来例の斜視図、第２図ａ、ｂは従来例の斜視
図ならびに断面図、第３図および第４図は本発明の構造
要部展開図および断面図、第６図はダイシング前の多連
状態を示す概要斜視図である。 ６・・・・・・セラミック印刷配線基板、６・・・・・
・スルーホール電極部、８・・・・・・メッキ形成後の
ボンディング用電極、９・・・・・・発光素子、１ｏ・
・・・・・樹脂。 代理人の氏名　弁理士　中　尾　敏　男　ほか１名第１
図 第２図 ／ａ１ （ｂ］ 第３図 第４図FIG. 1 is a perspective view of a conventional example, FIGS. 2 a and b are a perspective view and a sectional view of the conventional example, FIGS. 3 and 4 are exploded views and a sectional view of the main structure of the present invention, and FIG. 6 is a perspective view of the conventional example. FIG. 2 is a schematic perspective view showing a multiple state before dicing. 6...Ceramic printed wiring board, 6...
・Through hole electrode part, 8... Bonding electrode after plating formation, 9... Light emitting element, 1o.
·····resin. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2/a1 (b) Figure 3 Figure 4

Claims (1)

【特許請求の範囲】[Claims] 印刷配線基板と枠状絶縁基板とを積層し、その枠内部の
前記印刷配線基板−にに発光素子を組み込んだ構造の発
光素子。A light emitting element having a structure in which a printed wiring board and a frame-shaped insulating substrate are laminated, and a light emitting element is built into the printed wiring board inside the frame.
JP59118426A 1984-06-08 1984-06-08 Light-emitting element Pending JPS60262476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59118426A JPS60262476A (en) 1984-06-08 1984-06-08 Light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59118426A JPS60262476A (en) 1984-06-08 1984-06-08 Light-emitting element

Publications (1)

Publication Number Publication Date
JPS60262476A true JPS60262476A (en) 1985-12-25

Family

ID=14736349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59118426A Pending JPS60262476A (en) 1984-06-08 1984-06-08 Light-emitting element

Country Status (1)

Country Link
JP (1) JPS60262476A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0513818A (en) * 1991-07-05 1993-01-22 Sharp Corp Surface package-type light-emitting diode
JPH054529U (en) * 1991-06-27 1993-01-22 ローム株式会社 Chip-type light-emitting diode structure
JPH058959U (en) * 1991-07-17 1993-02-05 京セラ株式会社 Light emitting device storage package
JPH09181359A (en) * 1995-12-27 1997-07-11 Shichizun Denshi:Kk Chip light emitting diode
EP1011151A2 (en) * 1998-12-16 2000-06-21 Rohm Co., Ltd. Semiconductor device with reflector
DE10227515A1 (en) * 2001-12-24 2003-07-10 Samsung Electro Mech Light-emitting diode device
GB2406439A (en) * 2003-09-23 2005-03-30 Agilent Technologies Inc Ceramic packaging for high brightness LED devices
JP2005175039A (en) * 2003-12-09 2005-06-30 Kenichiro Miyahara Light emitting element and substrate for mounting the same
DE19549726B4 (en) * 1994-12-06 2010-04-22 Sharp K.K. Light emitting diode module for e.g. display panel, LCD back light - has LED chip enclosed in transparent resin package with electrodes being connected to respective P=type and N=type PN junction sides while passing through sealed respective insulating substrate hole
EP2270889B1 (en) * 2002-12-06 2016-03-30 Cree, Inc. LED package comprising leadframe and two-part heatsink
US10115870B2 (en) 2008-09-03 2018-10-30 Nichia Corporation Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body
JP2019016682A (en) * 2017-07-06 2019-01-31 Ｅ＆Ｅ Ｊａｐａｎ株式会社 Chip LED

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH054529U (en) * 1991-06-27 1993-01-22 ローム株式会社 Chip-type light-emitting diode structure
JPH0513818A (en) * 1991-07-05 1993-01-22 Sharp Corp Surface package-type light-emitting diode
JPH058959U (en) * 1991-07-17 1993-02-05 京セラ株式会社 Light emitting device storage package
DE19549726B4 (en) * 1994-12-06 2010-04-22 Sharp K.K. Light emitting diode module for e.g. display panel, LCD back light - has LED chip enclosed in transparent resin package with electrodes being connected to respective P=type and N=type PN junction sides while passing through sealed respective insulating substrate hole
JPH09181359A (en) * 1995-12-27 1997-07-11 Shichizun Denshi:Kk Chip light emitting diode
US6355946B1 (en) 1998-12-16 2002-03-12 Rohm Co., Ltd. Semiconductor device with reflector
EP1011151A3 (en) * 1998-12-16 2001-08-01 Rohm Co., Ltd. Semiconductor device with reflector
EP1011151A2 (en) * 1998-12-16 2000-06-21 Rohm Co., Ltd. Semiconductor device with reflector
DE10227515A1 (en) * 2001-12-24 2003-07-10 Samsung Electro Mech Light-emitting diode device
DE10227515B4 (en) * 2001-12-24 2004-04-29 Samsung Electro-Mechanics Co., Ltd., Suwon Light diode with ceramic substrate and reflector
EP2270889B1 (en) * 2002-12-06 2016-03-30 Cree, Inc. LED package comprising leadframe and two-part heatsink
GB2406439A (en) * 2003-09-23 2005-03-30 Agilent Technologies Inc Ceramic packaging for high brightness LED devices
GB2406439B (en) * 2003-09-23 2006-08-16 Agilent Technologies Inc Ceramic packaging for high brightness LED devices
US7854535B2 (en) 2003-09-23 2010-12-21 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Ceramic packaging for high brightness LED devices
JP2005175039A (en) * 2003-12-09 2005-06-30 Kenichiro Miyahara Light emitting element and substrate for mounting the same
US10115870B2 (en) 2008-09-03 2018-10-30 Nichia Corporation Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body
US10573788B2 (en) 2008-09-03 2020-02-25 Nichia Corporation Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body
US10573789B2 (en) 2008-09-03 2020-02-25 Nichia Corporation Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body
US10700241B2 (en) 2008-09-03 2020-06-30 Nichia Corporation Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body
US11094854B2 (en) 2008-09-03 2021-08-17 Nichia Corporation Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body
JP2019016682A (en) * 2017-07-06 2019-01-31 Ｅ＆Ｅ Ｊａｐａｎ株式会社 Chip LED

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