JPH041501B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device, and particularly to a method of mounting and assembling a semiconductor element on a substrate having a conductive pattern on an insulating substrate.

Conventionally, it has been considered convenient to provide a package for a semiconductor device with external leads in advance in order to measure the electrical connection with an external circuit. The dimensions of these external leads are 2.54 mm pitch, as represented by dual in-line type (hereinafter referred to as DIP type), and for example, 15.24 mm (600 mm).
It has been standardized to ensure compatibility and versatility.

However, in recent years there has been an increasing demand for smaller, lighter, and thinner electronic devices, and circuit components used in these devices, such as resistors, capacitors, and transistors, have become smaller, with no external leads. Less type chip parts are increasingly being used. The same holds true for semiconductor integrated circuit components, and small leadless type so-called chip carriers have come into use. This is because these leadless type chip components can be easily mounted using molten solder by making the mounting form on the printed circuit board the same. Therefore, it can greatly contribute to reducing the number of mounting steps, and no external lead is required.
Requires thinner design. It has been widely adopted in fields such as watches and desktop electronic calculators.

In these fields, the insulating substrate itself is used as a component of a package for a semiconductor device, forming a so-called chip-on-board semiconductor device. Chip-on-board formats have clear and limited uses, and even leadless types can be used satisfactorily.
It is difficult to adopt this format as it is for general semiconductor devices. This is because versatility and compatibility were sacrificed in order to become smaller and thinner. The usefulness of semiconductor devices having standardized external leads, such as the above-mentioned DIP type, cannot be ignored due to the amount of semiconductor devices in demand.

The present invention provides a method for manufacturing a semiconductor device that takes advantage of the advantages of the leadless type semiconductor device and also provides versatility and compatibility.

The present invention relates to a method for manufacturing a semiconductor device in which a semiconductor element is mounted and assembled on an insulating substrate having a conductive pattern, which has a rectangular shape, has a conductive pattern on one main surface, and has a conductive pattern formed on one main surface in the center. an insulating base in which a recess facing the surface is formed and a through hole penetrating both main surfaces is formed on the outside of the recess, and a contact part connected to a part of opposing both side edges of the insulating base; providing a frame-equipped substrate integrally formed with a synthetic resin laminate and a pair of frames connecting a plurality of the insulating substrates in a row on the same plane with a predetermined interval in the same direction via the contact portion; a step of mounting a semiconductor element in the recess of the frame-equipped substrate and electrically connecting the semiconductor element and the conductive pattern, and then the semiconductor element and the semiconductor element except for the through-hole of the frame-equipped substrate. and a step of resin-sealing a connection portion between the conductive pattern and the conductive pattern, and then a step of inserting an external lead into the through hole of the frame-equipped substrate and electrically connecting with the conductive pattern via a brazing material. It is characterized by containing. By doing so, ease of assembling a leadless type semiconductor device can be maintained and versatility can be ensured. Hereinafter, the present invention will be explained in detail using Examples.

1 and 2 are cross-sectional views showing a semiconductor device manufactured by a manufacturing method according to an embodiment of the present invention.

A manufacturing method using an epoxy resin substrate containing glass fiber as an insulating substrate will be described.

As the insulating substrate 1, a laminate of synthetic resin such as paper phenol, glass epoxy, glass polyimide, glass triazine, etc. is used. on the front and back surfaces of such a substrate.
After bonding the Cu foil, passing through the necessary hole processing and activation Cu plating steps, and applying through-hole plating as necessary, remove the unnecessary portions of the Cu foil by known means such as photo etching. remove parts. Further, necessary portions may be plated with Au afterwards. In this way, conductive pattern 2 is formed. Usually, these are not made into individual pieces, but are made into multiple pieces, which is advantageous in terms of handling in the subsequent assembly process, and improves mass productivity. Next, the semiconductor element 3 is mounted on the layer 4 on which a thermosetting conductive paste, for example a silver paste, is applied by screen printing or a dispenser. If the substrate is then heated, the paste will harden and the semiconductor element will be fixed. In addition to conductive paste, if the surface of the insulating base is metallized,
Low melting point brazing materials such as Sn--Pb, Au--Si, and Au--Sn can also be used. This point is similar to the conventional mounting method for semiconductor devices.

Next, the semiconductor element 3 and the conductive pattern 2 on the insulating substrate are electrically connected. In this example, a wire bonding method was exemplified. As a wire
Regardless of the type of Au or Al.

Next, the resin frame 5 is bonded and its inner cavity is filled with thermosetting resin 6. This resin frame is not necessary, and it is sufficient to prevent the thermosetting resin from flowing out more than necessary. Silicon-based and epoxy-based thermosetting resins are moisture resistant,
It has excellent heat resistance. Once the resin material is thermoset, it has a certain shape as a semiconductor device,
It can be used as a product as is. The above process is the fifth
Connected via the frame 13 shown in the figure,
This is similar to the manufacturing method of conventional resin-encapsulated semiconductor devices, and the same assembly method can be applied, so the assembly man-hours can be considerably reduced and it is suitable for mass production. ing.

If they are processed as a series, a leadless type semiconductor device product can be obtained by simply adding a step of cutting them into individual parts.
Next, an external lead 8 made of Kovar or Fe--Ni alloy plated with Au or Sn is bonded to the external connection terminal portion provided on the insulating base using a low-melting brazing material 7. In the embodiment shown in FIGS. 1 and 2, a through hole is provided in the insulating base and the external lead 8 is
This example shows the case where . Of course, the connection may be made via a low melting brazing material on the conductive pattern without providing a through hole.

This step of attaching the external leads may be carried out individually, but it is more convenient to carry out the process as a series. This is because it is possible to perform continuous processing even in electrical characteristic testing of semiconductor devices, which further improves mass productivity. As described above, the method of manufacturing a semiconductor device according to the present invention is most effective when dealing with members connected by the frame 13.

That is, if the external leads are attached to the insulating base in advance, the process of assembling them becomes too complicated and it is not possible to reduce the number of man-hours during mass production. This point is significantly different from resin-sealed semiconductor devices, which have a metal conductor such as 42 alloy as a base, which can be processed by bending, leaving the metal conductor that will become the external lead after resin sealing. do. This is because the base is made of an insulating material and the conductor does not have enough mechanical strength to withstand external forces.
Furthermore, it is advantageous for the external leads to be led out from the frame 13 not from the side surface of the insulating base, but in a direction substantially perpendicular to the insulating base, as exemplified in the embodiment. This is because an automatic external lead insertion machine can be used.

In FIG. 5, a plurality of electrically insulating substrates 1 having conductive patterns of frames 13 are connected.
That is, except for the contact portion with the frame 13, the surrounding area is removed by punching or router processing to facilitate cutting into individual pieces of each electrically insulating substrate.

Next, a case will be described in which ceramic is used as the insulating base 1' and a high melting point metal layer such as W.Mo--Mn is used as the conductive pattern 2'. This is shown in FIG. 3 as a reference example, in which a green sheet having a predetermined metallized pattern screen-printed thereon is provided with a cavity 9 so as to have an inclined portion using heat and pressure, and then fired. Ni plating and Au plating are applied to designated areas of the metallized pattern as necessary.
Apply plating. On the board made in this way,
Mount, bond, and seal like normal semiconductor devices. In the reference example, a glazed ceramic glass 10 is used. This completes the hermetically sealed semiconductor device, but a step of attaching external leads after sealing is also added to this. Such a process not only makes it easy to handle the board in each process of mount bonding and sealing, ensuring mass production, but also allows for the production of so-called normal plugs by arranging the external leads according to a certain standard. Since it is an in-type semiconductor device and is hermetically sealed, it is highly reliable and has a very low manufacturing cost. This will allow them to have an advantageous position in terms of market competitiveness.

FIG. 4 shows another embodiment of the present invention, in which the semiconductor element 3 and wires are protected with a sealing resin 6, external leads 8 are attached, and then the whole is molded with another resin 11. This figure shows a semiconductor device manufactured by the process. For this sealing, not only casting but also transfer molding can be used. With such a structure, the moisture resistance of the semiconductor device can be improved.

The resin layer 6 is not necessarily necessary and can be omitted. That is, the external leads may be attached after mounting the semiconductor device 3 on the substrate 1. Not only is the structure simplified, but mass productivity can be further improved by using transfer molding, which is used in ordinary resin-sealed semiconductor devices.

[Brief explanation of drawings]

FIG. 1 is a sectional view of a face-up type semiconductor device manufactured by the manufacturing method according to the present invention. The external leads may be in DIP format or grid plug-in type. FIG. 2 is a sectional view of a face-down type semiconductor device manufactured by a manufacturing method according to an embodiment of the present invention. The specifications of the external leads are the same as in FIG. FIG. 3 is a cross-sectional view of a semiconductor device of a reference example whose insulating substrate is made of ceramics manufactured by a manufacturing method according to a technique related to the present invention. Fourth
The figure is a sectional view of a transfer-molded semiconductor device manufactured by the manufacturing method according to the present invention. FIG. 5 is a perspective view showing that they are connected by a frame. Here, 1, 1'... Insulating base, 2, 2'... Conductive pattern, 3... Semiconductor element, 4... Mounting material, 5... Resin frame, 6... Resin material, 7... Brazing material for external lead connection, 8... External Lead, 9...Cavity part, 10...
Hermetic sealing lid, 11... Resin material for molding, 12
...metal plate, 13...frame.

Claims (1)

[Claims] 1. A method for manufacturing a semiconductor device in which a semiconductor element is mounted and assembled on an insulating substrate having a conductive pattern, which has a rectangular shape and has a conductive pattern on one main surface;
an insulating base having a recess extending from the one main surface to the other main surface in the center thereof and a through hole penetrating both the main faces outside the recess; and opposing opposite side edges of the insulating base. A contact portion connected to a part of the contact portion, and a pair of frames that connect a plurality of the insulating substrates in a row on the same plane with a predetermined interval in the same direction via the contact portion are integrated by a synthetic resin laminate. a step of mounting a semiconductor element in the recess of the frame-equipped substrate and electrically connecting the semiconductor element and the conductive pattern; A step of sealing the semiconductor element excluding the hole and the connecting portion between the semiconductor element and the conductive pattern with resin, and then inserting an external lead into the through hole of the frame-equipped substrate and inserting the external lead through the brazing material. A method for manufacturing a semiconductor device, the method comprising the step of electrically connecting a conductive pattern.