JPS60251657A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS60251657A
JPS60251657A JP59106663A JP10666384A JPS60251657A JP S60251657 A JPS60251657 A JP S60251657A JP 59106663 A JP59106663 A JP 59106663A JP 10666384 A JP10666384 A JP 10666384A JP S60251657 A JPS60251657 A JP S60251657A
Authority
JP
Japan
Prior art keywords
region
semiconductor
pace
electrode
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59106663A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0566745B2 (enExample
Inventor
Nobuyoshi Tanaka
田中　信義
Shigeyuki Matsumoto
繁幸 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59106663A priority Critical patent/JPS60251657A/ja
Publication of JPS60251657A publication Critical patent/JPS60251657A/ja
Priority to US07/120,786 priority patent/US4794443A/en
Publication of JPH0566745B2 publication Critical patent/JPH0566745B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/197—Bipolar transistor image sensors

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Element Separation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP59106663A 1984-05-28 1984-05-28 半導体装置 Granted JPS60251657A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59106663A JPS60251657A (ja) 1984-05-28 1984-05-28 半導体装置
US07/120,786 US4794443A (en) 1984-05-28 1987-11-16 Semiconductor device and process for producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59106663A JPS60251657A (ja) 1984-05-28 1984-05-28 半導体装置

Publications (2)

Publication Number Publication Date
JPS60251657A true JPS60251657A (ja) 1985-12-12
JPH0566745B2 JPH0566745B2 (enExample) 1993-09-22

Family

ID=14439320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59106663A Granted JPS60251657A (ja) 1984-05-28 1984-05-28 半導体装置

Country Status (1)

Country Link
JP (1) JPS60251657A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376477A (ja) * 1986-09-19 1988-04-06 Canon Inc 光電変換装置
US5089425A (en) * 1986-02-04 1992-02-18 Canon Kabushiki Kaisha Photoelectric converting device having an electrode formed across an insulating layer on a control electrode and method for producing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5089425A (en) * 1986-02-04 1992-02-18 Canon Kabushiki Kaisha Photoelectric converting device having an electrode formed across an insulating layer on a control electrode and method for producing the same
JPS6376477A (ja) * 1986-09-19 1988-04-06 Canon Inc 光電変換装置

Also Published As

Publication number Publication date
JPH0566745B2 (enExample) 1993-09-22

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