JPS60247642A - スプレ−方法 - Google Patents
スプレ−方法Info
- Publication number
- JPS60247642A JPS60247642A JP10543484A JP10543484A JPS60247642A JP S60247642 A JPS60247642 A JP S60247642A JP 10543484 A JP10543484 A JP 10543484A JP 10543484 A JP10543484 A JP 10543484A JP S60247642 A JPS60247642 A JP S60247642A
- Authority
- JP
- Japan
- Prior art keywords
- time
- solenoid valve
- pump
- filter
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005507 spraying Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 239000007788 liquid Substances 0.000 claims abstract description 34
- 238000007599 discharging Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 23
- 238000004140 cleaning Methods 0.000 description 20
- 238000005530 etching Methods 0.000 description 19
- 239000007921 spray Substances 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000011161 development Methods 0.000 description 5
- 239000003595 mist Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10543484A JPS60247642A (ja) | 1984-05-24 | 1984-05-24 | スプレ−方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10543484A JPS60247642A (ja) | 1984-05-24 | 1984-05-24 | スプレ−方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60247642A true JPS60247642A (ja) | 1985-12-07 |
| JPH0439664B2 JPH0439664B2 (cg-RX-API-DMAC7.html) | 1992-06-30 |
Family
ID=14407482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10543484A Granted JPS60247642A (ja) | 1984-05-24 | 1984-05-24 | スプレ−方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60247642A (cg-RX-API-DMAC7.html) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01244618A (ja) * | 1988-03-25 | 1989-09-29 | Tokyo Electron Ltd | 処理液供給方法 |
| JPH02253264A (ja) * | 1989-03-27 | 1990-10-12 | Konica Corp | 感光材料の処理装置 |
| JPH0794407A (ja) * | 1994-09-01 | 1995-04-07 | Fujitsu Ltd | 基板処理方法及び基板処理装置 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5438020B2 (ja) | 2008-10-10 | 2014-03-12 | 東洋紡株式会社 | 新規なフルクトシルバリルヒスチジンオキシダーゼ活性を有するタンパク質及びその改変体、並びにその利用 |
-
1984
- 1984-05-24 JP JP10543484A patent/JPS60247642A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01244618A (ja) * | 1988-03-25 | 1989-09-29 | Tokyo Electron Ltd | 処理液供給方法 |
| JPH02253264A (ja) * | 1989-03-27 | 1990-10-12 | Konica Corp | 感光材料の処理装置 |
| JPH0794407A (ja) * | 1994-09-01 | 1995-04-07 | Fujitsu Ltd | 基板処理方法及び基板処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0439664B2 (cg-RX-API-DMAC7.html) | 1992-06-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |