JPS60246622A - 半導体結晶層の製造方法 - Google Patents

半導体結晶層の製造方法

Info

Publication number
JPS60246622A
JPS60246622A JP59101775A JP10177584A JPS60246622A JP S60246622 A JPS60246622 A JP S60246622A JP 59101775 A JP59101775 A JP 59101775A JP 10177584 A JP10177584 A JP 10177584A JP S60246622 A JPS60246622 A JP S60246622A
Authority
JP
Japan
Prior art keywords
opening
layer
single crystal
semiconductor
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59101775A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0149003B2 (enFirst
Inventor
Kenji Shibata
健二 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59101775A priority Critical patent/JPS60246622A/ja
Publication of JPS60246622A publication Critical patent/JPS60246622A/ja
Publication of JPH0149003B2 publication Critical patent/JPH0149003B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Recrystallisation Techniques (AREA)
JP59101775A 1984-05-22 1984-05-22 半導体結晶層の製造方法 Granted JPS60246622A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59101775A JPS60246622A (ja) 1984-05-22 1984-05-22 半導体結晶層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59101775A JPS60246622A (ja) 1984-05-22 1984-05-22 半導体結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS60246622A true JPS60246622A (ja) 1985-12-06
JPH0149003B2 JPH0149003B2 (enFirst) 1989-10-23

Family

ID=14309584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59101775A Granted JPS60246622A (ja) 1984-05-22 1984-05-22 半導体結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS60246622A (enFirst)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63169023A (ja) * 1987-01-07 1988-07-13 Agency Of Ind Science & Technol Ｓｏｉ結晶成長法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5781583A (en) * 1980-11-11 1982-05-21 Nichibei Buraindo Kogyo Kk Lifting and inclining apparatus of blind
JPS5996383A (ja) * 1982-11-19 1984-06-02 立川ブラインド工業株式会社 ヘツドボツクス昇降型ブラインドの開閉駆動装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5781583A (en) * 1980-11-11 1982-05-21 Nichibei Buraindo Kogyo Kk Lifting and inclining apparatus of blind
JPS5996383A (ja) * 1982-11-19 1984-06-02 立川ブラインド工業株式会社 ヘツドボツクス昇降型ブラインドの開閉駆動装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63169023A (ja) * 1987-01-07 1988-07-13 Agency Of Ind Science & Technol Ｓｏｉ結晶成長法

Also Published As

Publication number Publication date
JPH0149003B2 (enFirst) 1989-10-23

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term