JPS60246621A - シリコン結晶層の製造方法 - Google Patents

シリコン結晶層の製造方法

Info

Publication number
JPS60246621A
JPS60246621A JP59101774A JP10177484A JPS60246621A JP S60246621 A JPS60246621 A JP S60246621A JP 59101774 A JP59101774 A JP 59101774A JP 10177484 A JP10177484 A JP 10177484A JP S60246621 A JPS60246621 A JP S60246621A
Authority
JP
Japan
Prior art keywords
layer
opening
single crystal
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59101774A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0236051B2 (enExample
Inventor
Kenji Shibata
健二 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP59101774A priority Critical patent/JPS60246621A/ja
Publication of JPS60246621A publication Critical patent/JPS60246621A/ja
Publication of JPH0236051B2 publication Critical patent/JPH0236051B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Recrystallisation Techniques (AREA)
JP59101774A 1984-05-22 1984-05-22 シリコン結晶層の製造方法 Granted JPS60246621A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59101774A JPS60246621A (ja) 1984-05-22 1984-05-22 シリコン結晶層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59101774A JPS60246621A (ja) 1984-05-22 1984-05-22 シリコン結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS60246621A true JPS60246621A (ja) 1985-12-06
JPH0236051B2 JPH0236051B2 (enExample) 1990-08-15

Family

ID=14309556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59101774A Granted JPS60246621A (ja) 1984-05-22 1984-05-22 シリコン結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS60246621A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216720A (ja) * 1988-07-04 1990-01-19 Sanyo Electric Co Ltd 固相エピタキシヤル成長方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910010682A (ko) * 1989-11-30 1991-06-29 정몽헌 걸형(Gull Type) 및 J형(J Type)의 혼합 I.C 패캐이지.
JPH0473959A (ja) * 1990-07-16 1992-03-09 Nec Ic Microcomput Syst Ltd 半導体パッケージ
JPH05259356A (ja) * 1992-03-13 1993-10-08 Nippon Avionics Co Ltd 表面実装型部品及びプリント配線板

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5673697A (en) * 1979-11-21 1981-06-18 Hitachi Ltd Manufacture of single crystal thin film
JPS5745920A (en) * 1980-09-02 1982-03-16 Fujitsu Ltd Forming method for semiconductor single crystal by energy beam emission

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5673697A (en) * 1979-11-21 1981-06-18 Hitachi Ltd Manufacture of single crystal thin film
JPS5745920A (en) * 1980-09-02 1982-03-16 Fujitsu Ltd Forming method for semiconductor single crystal by energy beam emission

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216720A (ja) * 1988-07-04 1990-01-19 Sanyo Electric Co Ltd 固相エピタキシヤル成長方法

Also Published As

Publication number Publication date
JPH0236051B2 (enExample) 1990-08-15

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Legal Events

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EXPY Cancellation because of completion of term