JPS60244073A - 不揮発性半導体記憶装置の製造方法 - Google Patents
不揮発性半導体記憶装置の製造方法Info
- Publication number
- JPS60244073A JPS60244073A JP59099262A JP9926284A JPS60244073A JP S60244073 A JPS60244073 A JP S60244073A JP 59099262 A JP59099262 A JP 59099262A JP 9926284 A JP9926284 A JP 9926284A JP S60244073 A JPS60244073 A JP S60244073A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- gate electrode
- diffusion layer
- film
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 239000012535 impurity Substances 0.000 claims abstract description 54
- 238000009792 diffusion process Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 230000003647 oxidation Effects 0.000 claims abstract description 14
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- 238000002955 isolation Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 105
- 239000010409 thin film Substances 0.000 abstract description 20
- 230000004888 barrier function Effects 0.000 abstract description 13
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 238000007493 shaping process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 37
- 238000005468 ion implantation Methods 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 230000001133 acceleration Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 4
- 150000004678 hydrides Chemical class 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910005091 Si3N Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000009279 wet oxidation reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 241001108921 Asclepias asperula Species 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59099262A JPS60244073A (ja) | 1984-05-17 | 1984-05-17 | 不揮発性半導体記憶装置の製造方法 |
| KR1019850003006A KR890004459B1 (ko) | 1984-05-17 | 1985-05-03 | 불휘발성 반도체기억장치의 제조방법 |
| DE8585106028T DE3576245D1 (de) | 1984-05-17 | 1985-05-15 | Verfahren zur herstellung eines nichtfluechtigen halbleiter-eeprom-elementes. |
| EP85106028A EP0164605B1 (en) | 1984-05-17 | 1985-05-15 | Method of manufacturing nonvolatile semiconductor eeprom device |
| US06/735,211 US4642881A (en) | 1984-05-17 | 1985-05-17 | Method of manufacturing nonvolatile semiconductor memory device by forming additional impurity doped region under the floating gate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59099262A JPS60244073A (ja) | 1984-05-17 | 1984-05-17 | 不揮発性半導体記憶装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60244073A true JPS60244073A (ja) | 1985-12-03 |
Family
ID=14242790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59099262A Pending JPS60244073A (ja) | 1984-05-17 | 1984-05-17 | 不揮発性半導体記憶装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS60244073A (ko) |
| KR (1) | KR890004459B1 (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63197378A (ja) * | 1987-02-12 | 1988-08-16 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
| JPH04287977A (ja) * | 1991-01-24 | 1992-10-13 | Matsushita Electron Corp | 不揮発性半導体記憶装置の製造方法 |
-
1984
- 1984-05-17 JP JP59099262A patent/JPS60244073A/ja active Pending
-
1985
- 1985-05-03 KR KR1019850003006A patent/KR890004459B1/ko not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63197378A (ja) * | 1987-02-12 | 1988-08-16 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
| JPH04287977A (ja) * | 1991-01-24 | 1992-10-13 | Matsushita Electron Corp | 不揮発性半導体記憶装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR890004459B1 (ko) | 1989-11-04 |
| KR850008762A (ko) | 1985-12-21 |
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