JPS60242671A - ヘテロ接合バイポ−ラトランジスタ - Google Patents

ヘテロ接合バイポ−ラトランジスタ

Info

Publication number
JPS60242671A
JPS60242671A JP59098091A JP9809184A JPS60242671A JP S60242671 A JPS60242671 A JP S60242671A JP 59098091 A JP59098091 A JP 59098091A JP 9809184 A JP9809184 A JP 9809184A JP S60242671 A JPS60242671 A JP S60242671A
Authority
JP
Japan
Prior art keywords
semiconductor
base
type
doped
base region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59098091A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0543178B2 (cg-RX-API-DMAC7.html
Inventor
Takayuki Sugata
孝之 菅田
Tadao Ishibashi
忠夫 石橋
Hiroshi Ito
弘 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59098091A priority Critical patent/JPS60242671A/ja
Publication of JPS60242671A publication Critical patent/JPS60242671A/ja
Publication of JPH0543178B2 publication Critical patent/JPH0543178B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/881—Resonant tunnelling transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 

Landscapes

  • Bipolar Transistors (AREA)
JP59098091A 1984-05-16 1984-05-16 ヘテロ接合バイポ−ラトランジスタ Granted JPS60242671A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59098091A JPS60242671A (ja) 1984-05-16 1984-05-16 ヘテロ接合バイポ−ラトランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59098091A JPS60242671A (ja) 1984-05-16 1984-05-16 ヘテロ接合バイポ−ラトランジスタ

Publications (2)

Publication Number Publication Date
JPS60242671A true JPS60242671A (ja) 1985-12-02
JPH0543178B2 JPH0543178B2 (cg-RX-API-DMAC7.html) 1993-06-30

Family

ID=14210668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59098091A Granted JPS60242671A (ja) 1984-05-16 1984-05-16 ヘテロ接合バイポ−ラトランジスタ

Country Status (1)

Country Link
JP (1) JPS60242671A (cg-RX-API-DMAC7.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63260064A (ja) * 1986-08-01 1988-10-27 テキサス　インスツルメンツ　インコ−ポレイテツド ３次元バイポ−ラウェ−ハ及び工程
US4797722A (en) * 1986-05-23 1989-01-10 U.S. Philips Corporation Hot charge-carrier transistors
US4929997A (en) * 1986-12-22 1990-05-29 Nec Corporation Heterojunction bipolar transistor with ballistic operation
US4979009A (en) * 1987-06-08 1990-12-18 Hitachi, Ltd. Heterojunction bipolar transistor
WO2004040652A1 (en) * 2002-10-30 2004-05-13 International Business Machines Corporation Bipolar transistor having a base region with a constant bandgap layer and a graded bandgap layer
WO2012102196A1 (ja) * 2011-01-24 2012-08-02 Ｎｔｔエレクトロニクス株式会社 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114455A (ja) * 1981-12-28 1983-07-07 Nec Corp 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58114455A (ja) * 1981-12-28 1983-07-07 Nec Corp 半導体装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4797722A (en) * 1986-05-23 1989-01-10 U.S. Philips Corporation Hot charge-carrier transistors
JPS63260064A (ja) * 1986-08-01 1988-10-27 テキサス　インスツルメンツ　インコ−ポレイテツド ３次元バイポ−ラウェ−ハ及び工程
US4929997A (en) * 1986-12-22 1990-05-29 Nec Corporation Heterojunction bipolar transistor with ballistic operation
US4979009A (en) * 1987-06-08 1990-12-18 Hitachi, Ltd. Heterojunction bipolar transistor
WO2004040652A1 (en) * 2002-10-30 2004-05-13 International Business Machines Corporation Bipolar transistor having a base region with a constant bandgap layer and a graded bandgap layer
US7170112B2 (en) 2002-10-30 2007-01-30 International Business Machines Corporation Graded-base-bandgap bipolar transistor having a constant—bandgap in the base
WO2012102196A1 (ja) * 2011-01-24 2012-08-02 Ｎｔｔエレクトロニクス株式会社 半導体装置
JP2012156206A (ja) * 2011-01-24 2012-08-16 Ntt Electornics Corp 半導体装置
CN103403848A (zh) * 2011-01-24 2013-11-20 Ntt电子股份有限公司 半导体器件
US8754445B2 (en) 2011-01-24 2014-06-17 Ntt Electronics Corporation Semiconductor device
CN103403848B (zh) * 2011-01-24 2016-02-24 Ntt电子股份有限公司 半导体器件

Also Published As

Publication number Publication date
JPH0543178B2 (cg-RX-API-DMAC7.html) 1993-06-30

Similar Documents

Publication Publication Date Title
JPH0669222A (ja) ヘテロ接合バイポーラトランジスタ及びその製造方法
US4959696A (en) Three terminal tunneling device and method
JPS60242671A (ja) ヘテロ接合バイポ−ラトランジスタ
US4825269A (en) Double heterojunction inversion base transistor
US5270225A (en) Method of making a resonant tunneling semiconductor device
JPH06188271A (ja) 電界効果トランジスタ
US5349202A (en) Tunneling transistor
JP2830167B2 (ja) 半導体結晶
JP3119207B2 (ja) 共鳴トンネルトランジスタおよびその製造方法
Wang et al. Minimization of the offset voltage in heterojunction dipolar transistors by using a thick spacer
JPH0656851B2 (ja) 半導体装置
US6204513B1 (en) Heterostructure interband tunneling diode
JPH07263664A (ja) 半導体装置およびその製造方法
JP3149685B2 (ja) バレー電流を低減した共鳴トンネリング・ダイオード
JPH0388369A (ja) ヘテロ構造半導体装置
JPH01124268A (ja) 共鳴トンネリングバリア構造デバイス
JPS6317563A (ja) 半導体装置
JPH0831471B2 (ja) 共鳴トンネリングトランジスタ
KR100337942B1 (ko) 이중 이종접합 쌍극성 트랜지스터
JP2518160B2 (ja) 共鳴トンネル・ダイオ―ド
JPH01149465A (ja) ヘテロ接合バイポーラトランジスタ
US5698862A (en) Structure of the heterostructure-emitter and heterostructure-base transistor (HEHBT)
Tsai Functional AlGaAs/GaAs heterostructure-emitter bipolar transistor with a pseudomorphic InGaAs/GaAs quantum-well base
TW441123B (en) A resonant-tunneling heterostructure bipolar transistor
Tsai A novel resonant tunneling base transistor with bi-directional negative-differential-resistance phenomena

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term