JPS60239400A - 化合物半導体のアニ−ル法 - Google Patents
化合物半導体のアニ−ル法Info
- Publication number
- JPS60239400A JPS60239400A JP9539284A JP9539284A JPS60239400A JP S60239400 A JPS60239400 A JP S60239400A JP 9539284 A JP9539284 A JP 9539284A JP 9539284 A JP9539284 A JP 9539284A JP S60239400 A JPS60239400 A JP S60239400A
- Authority
- JP
- Japan
- Prior art keywords
- annealing
- substrate
- compound semiconductor
- temperature
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000137 annealing Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 150000001875 compounds Chemical class 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000001228 spectrum Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9539284A JPS60239400A (ja) | 1984-05-11 | 1984-05-11 | 化合物半導体のアニ−ル法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9539284A JPS60239400A (ja) | 1984-05-11 | 1984-05-11 | 化合物半導体のアニ−ル法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60239400A true JPS60239400A (ja) | 1985-11-28 |
| JPH0480880B2 JPH0480880B2 (enrdf_load_stackoverflow) | 1992-12-21 |
Family
ID=14136372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9539284A Granted JPS60239400A (ja) | 1984-05-11 | 1984-05-11 | 化合物半導体のアニ−ル法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60239400A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4752592A (en) * | 1985-11-29 | 1988-06-21 | Matsushita Electric Industrial Co., Ltd. | Annealing method for compound semiconductor substrate |
| JPS641229A (en) * | 1987-06-23 | 1989-01-05 | Nec Corp | Formation of iii-v semiconductor conductive layer |
| JPH02303121A (ja) * | 1989-05-01 | 1990-12-17 | American Teleph & Telegr Co <Att> | 半導体デバイスの製造方法 |
| WO2007049413A1 (ja) * | 2005-10-28 | 2007-05-03 | National Institute Of Advanced Industrial Science And Technology | 半導体製造装置及び半導体装置 |
| JP2008060401A (ja) * | 2006-08-31 | 2008-03-13 | Shindengen Electric Mfg Co Ltd | 半導体装置の製造方法、半導体装置の製造用治具、および半導体装置の製造装置 |
| US7510986B2 (en) | 2004-01-07 | 2009-03-31 | Rohm Co., Ltd. | Production method for semiconductor device |
| JP2012064852A (ja) * | 2010-09-17 | 2012-03-29 | Toyota Motor Corp | 基板の熱処理方法および熱処理装置 |
-
1984
- 1984-05-11 JP JP9539284A patent/JPS60239400A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| ELECTRONICS LETTERS=1984 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4752592A (en) * | 1985-11-29 | 1988-06-21 | Matsushita Electric Industrial Co., Ltd. | Annealing method for compound semiconductor substrate |
| JPS641229A (en) * | 1987-06-23 | 1989-01-05 | Nec Corp | Formation of iii-v semiconductor conductive layer |
| JPH02303121A (ja) * | 1989-05-01 | 1990-12-17 | American Teleph & Telegr Co <Att> | 半導体デバイスの製造方法 |
| US7510986B2 (en) | 2004-01-07 | 2009-03-31 | Rohm Co., Ltd. | Production method for semiconductor device |
| WO2007049413A1 (ja) * | 2005-10-28 | 2007-05-03 | National Institute Of Advanced Industrial Science And Technology | 半導体製造装置及び半導体装置 |
| JPWO2007049413A1 (ja) * | 2005-10-28 | 2009-04-30 | 独立行政法人産業技術総合研究所 | 半導体製造装置及び半導体装置 |
| JP2008060401A (ja) * | 2006-08-31 | 2008-03-13 | Shindengen Electric Mfg Co Ltd | 半導体装置の製造方法、半導体装置の製造用治具、および半導体装置の製造装置 |
| US8703626B2 (en) | 2006-08-31 | 2014-04-22 | Shindengen Electric Manufacturing Co., Ltd. | Method, tool, and apparatus for manufacturing a semiconductor device |
| JP2012064852A (ja) * | 2010-09-17 | 2012-03-29 | Toyota Motor Corp | 基板の熱処理方法および熱処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0480880B2 (enrdf_load_stackoverflow) | 1992-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4576652A (en) | Incoherent light annealing of gallium arsenide substrate | |
| JPS586300B2 (ja) | アニ−リング方法 | |
| JPH02294027A (ja) | アニール方法およびアニール装置 | |
| JPH07122570A (ja) | 化合物半導体の熱処理方法 | |
| JPS60239400A (ja) | 化合物半導体のアニ−ル法 | |
| JPH1197448A (ja) | 熱処理装置とこれを用いた半導体結晶の熱処理法 | |
| JP2002505520A (ja) | 超小型電子半導体構造部材の製造法 | |
| JPS60239030A (ja) | 化合物半導体のアニ−ル法 | |
| JPS60239398A (ja) | 化合物半導体のアニ−ル法 | |
| JPS603124A (ja) | 化合物半導体のアニ−ル法 | |
| JP4286978B2 (ja) | 半導体基板の熱処理方法 | |
| JPS6175517A (ja) | 化合物半導体基板のアニ−ル法 | |
| JP2737781B2 (ja) | 化合物半導体基板の熱処理法 | |
| JP2979550B2 (ja) | ランプアニール装置 | |
| JPH0480879B2 (enrdf_load_stackoverflow) | ||
| JPS637022B2 (enrdf_load_stackoverflow) | ||
| JPS62271420A (ja) | 半導体基体の処理装置 | |
| JPH02291119A (ja) | 化合物半導体基板の熱処理方法 | |
| JPH01260834A (ja) | ３−５族半導体基板の熱処理方法 | |
| JP3084089B2 (ja) | 半導体装置用基板及びその製造方法 | |
| JP3356582B2 (ja) | シリカガラス治具及びその処理方法 | |
| JPH02185037A (ja) | 短時間熱処理装置 | |
| JPH04334018A (ja) | 熱処理装置 | |
| JPS60227416A (ja) | 半導体基板のアニ−ル方法 | |
| JPS6271221A (ja) | ＧａＡｓ半導体ウエハのアニ−ル法 |