JPH0480879B2 - - Google Patents

Info

Publication number
JPH0480879B2
JPH0480879B2 JP9539084A JP9539084A JPH0480879B2 JP H0480879 B2 JPH0480879 B2 JP H0480879B2 JP 9539084 A JP9539084 A JP 9539084A JP 9539084 A JP9539084 A JP 9539084A JP H0480879 B2 JPH0480879 B2 JP H0480879B2
Authority
JP
Japan
Prior art keywords
substrate
annealing
film
implanted
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP9539084A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60239399A (ja
Inventor
Toshiki Ehata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP9539084A priority Critical patent/JPS60239399A/ja
Publication of JPS60239399A publication Critical patent/JPS60239399A/ja
Publication of JPH0480879B2 publication Critical patent/JPH0480879B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP9539084A 1984-05-11 1984-05-11 化合物半導体のアニ−ル法 Granted JPS60239399A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9539084A JPS60239399A (ja) 1984-05-11 1984-05-11 化合物半導体のアニ−ル法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9539084A JPS60239399A (ja) 1984-05-11 1984-05-11 化合物半導体のアニ−ル法

Publications (2)

Publication Number Publication Date
JPS60239399A JPS60239399A (ja) 1985-11-28
JPH0480879B2 true JPH0480879B2 (enrdf_load_stackoverflow) 1992-12-21

Family

ID=14136316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9539084A Granted JPS60239399A (ja) 1984-05-11 1984-05-11 化合物半導体のアニ−ル法

Country Status (1)

Country Link
JP (1) JPS60239399A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS60239399A (ja) 1985-11-28

Similar Documents

Publication Publication Date Title
Lee et al. Thin film MOSFET’s fabricated in laser‐annealed polycrystalline silicon
US5508207A (en) Method of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminants
US4576652A (en) Incoherent light annealing of gallium arsenide substrate
JPH0325951B2 (enrdf_load_stackoverflow)
JPH0263294B2 (enrdf_load_stackoverflow)
JPH0480880B2 (enrdf_load_stackoverflow)
US4820651A (en) Method of treating bodies of III-V compound semiconductor material
JPS60239030A (ja) 化合物半導体のアニ−ル法
JPH0480879B2 (enrdf_load_stackoverflow)
JPS637624A (ja) 3−v族化合物半導体材料中への導電形付与物質の拡散方法
JPH0480878B2 (enrdf_load_stackoverflow)
JPH03227525A (ja) 薄膜トランジスタの製造方法
JPS6130030A (ja) 多元素半導体のアニ−ル方法
JPS603124A (ja) 化合物半導体のアニ−ル法
JPS6175517A (ja) 化合物半導体基板のアニ−ル法
JPS61289620A (ja) 半導体薄膜の熱処理方法
Rosenblatt et al. Rapid thermal annealing of Si-implanted GaAs
JP3084089B2 (ja) 半導体装置用基板及びその製造方法
JPS60227416A (ja) 半導体基板のアニ−ル方法
JPS6142911A (ja) イオン注入による導電層形成方法
Biedenbender et al. Chemical Nature of Silicon Nitride‐Indium Phosphide Interface and Rapid Thermal Annealing for InP MISFETs
Yagita et al. Cr gettering by Ne ion implantation and the correlation with the electrical activation of implanted Si in semi‐insulating GaAs
JPS62271420A (ja) 半導体基体の処理装置
JPH02291119A (ja) 化合物半導体基板の熱処理方法
JPS5999713A (ja) 薄膜トランジスタ用基板の製造方法